公开(公告)号：JP2004282046A

公开(公告)日：2004-10-07

申请号：JP2004045957

申请日：2004-02-23

Applicant: Asml Netherlands Bv ,  Cark Zeiss Smt Ag ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ ,  カール ツァイス エスエムテー アーゲー

Inventor： KURT RALPH ,  VAN BEEK MICHAEL CORNELIS ,  DUISTERWINKEL ANTONIE ELLERT ,  KIEFT ERIK RENE ,  MEILING HANS ,  MERTENS BASTIAAN MATTHIAS ,  MOORS JOHANNES HUBERTUS JOSEPH ,  STEVENS LUCAS HENRICUS JOHANNE ,  WOLSCHRIJN BASTIAAN THEODOOR

IPC: G01N21/94 ,  G01N21/27 ,  G01N21/33 ,  G01N21/35 ,  G01N21/956 ,  G03F7/20 ,  G21K5/00 ,  G21K5/02 ,  H01L21/027

CPC classification number: G03F7/70916 ,  G01N21/95684

Abstract: PROBLEM TO BE SOLVED: To provide a method and an apparatus for measuring the contamination on the surfaces of the constituent components of a lithographic projection apparatus. SOLUTION: The measuring apparatus includes a radiation transmitter for projecting radiation onto at least a part of the surface of each component of a lithographic projection apparatus and a radiation receiver which receives radiation from each constituent component. A processor, which is connected to the radiation receiver through communication, obtains the characteristics of the received radiation, and then determines the characteristics of the contamination on the basis of the radiation characteristics. The measuring apparatus comprises the steps of: projecting the radiation to the surface of each component, receiving the radiation from each component, and determining the characteristics of the contamination on the basis of the received radiation. COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP2007305992A

公开(公告)日：2007-11-22

申请号：JP2007120962

申请日：2007-05-01

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： KOSHELEV KONSTANTIN NIKOLAEVIT ,  BANINE VADIM YEVGENYEVICH ,  IVANOV VLADIMIR VITAL EVITCH ,  KIEFT ERIK RENE ,  LOOPSTRA ERIK ROELOF ,  STEVENS LUCAS HENRICUS JOHANNE ,  SIDELKOV YURII VICTOROVITCH ,  KOLOSHNIKOV VSEVOLOD GRIGOREVI ,  KRIVTSUN VLADIMIR MIHAILOVITCH ,  GAYAZOV ROBERT RAFILEVITCH ,  FRIJNS OLAV WALDEMAR VLADIMIR

IPC: G21K5/00 ,  H01L21/027 ,  F28D15/02 ,  G03F7/20 ,  G21K5/02 ,  G21K5/08 ,  H05G2/00 ,  H05H1/24

CPC classification number: H05G2/003 ,  B82Y10/00 ,  F28D15/0266 ,  G03F7/70033 ,  G03F7/70166 ,  G03F7/70916 ,  H05G2/005

Abstract: PROBLEM TO BE SOLVED: To provide a radiation source that actualizes an output level and a repetition rate suitable for manufacturing. SOLUTION: A radiation source comprises an anode and a cathode that are configured and arranged to create a discharge in a gas or a vapor in a space between the anode and cathode for forming a plasma so as to generate electromagnetic radiation. The gas or vapor may contain xenon, indium, lithium and/or tin. To improve heat dissipation, the radiation source comprises multiple plasma discharge elements, each of which is used only for short intervals. After one discharge element is used, another discharge element is selected. To improve an exact timing of pinch formation and thus that of pulse of EUV radiation, the radiation source comprises a triggering device. To improve conversion efficiency, the radiation source is configured to have a low inductance, and operates in a self-triggering mode. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供实现适合于制造的输出电平和重复率的辐射源。 解决方案：辐射源包括阳极和阴极，其构造和布置成在阳极和阴极之间的空间中的气体或蒸汽中产生放电，以形成等离子体，以便产生电磁辐射。 气体或蒸汽可以含有氙，铟，锂和/或锡。 为了改善散热，辐射源包括多个等离子体放电元件，每个等离子体放电元件仅用于短时间间隔。 在使用一个放电元件之后，选择另一个放电元件。 为了提高夹紧形成的准确时间，并且因此提高EUV辐射脉冲的准确时间，辐射源包括触发装置。 为了提高转换效率，辐射源被配置为具有低电感，并以自触发模式工作。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2004165155A

公开(公告)日：2004-06-10

申请号：JP2003363845

申请日：2003-09-17

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： KOSHELEV KONSTANTIN NIKOLAEVIT ,  BANINE VADIM YEVGENYEVICH ,  IVANOV VLADIMIR VITAL EVITCH ,  KIEFT ERIK RENE ,  LOOPSTRA ERIK ROELOF ,  STEVENS LUCAS HENRICUS JOHANNE ,  SIDELKOV YURII VICTOROVITCH ,  KOLOSHNIKOV VSEVOLOD GRIGOREVI ,  KRIVTSUN VLADIMIR MIHAILOVITCH ,  GAYAZOV ROBERT RAFILEVITCH ,  FRIJNS OLAV WALDEMAR VLADIMIR

IPC: G21K5/00 ,  F28D15/02 ,  G03F7/20 ,  G21K5/02 ,  G21K5/08 ,  H01L21/027 ,  H05G2/00 ,  H05H1/24

CPC classification number: H05G2/003 ,  B82Y10/00 ,  F28D15/0266 ,  G03F7/70033 ,  G03F7/70166 ,  G03F7/70916 ,  H05G2/005

Abstract: PROBLEM TO BE SOLVED: To provide a radiation source in which an output level and a repeating speed that are suitable for production are realized.
SOLUTION: The radiation source comprises an anode 220 and a cathode 210 that are configured and arranged to create a discharge in a gas or vapor in a space between the anode 220 and cathode 210 to form a plasma pinch so as to generate electromagnetic radiation. The gas or vapor may comprise xenon, indium, lithium, and tin. In order to improve heat dissipation, the radiation source LA comprises a plurality of plasma discharge elements 240, each of which is only used for short intervals, after which another discharge element is selected.
COPYRIGHT: (C)2004,JPO

公开(公告)号：SG129259A1

公开(公告)日：2007-02-26

申请号：SG200305633

申请日：2003-09-17

Applicant: ASML NETHERLANDS BV

Inventor： STEVENS LUCAS HENRICUS JOHANNE ,  SIDELKOV YURII VCTOROVITCH ,  KOLOSHNIKOV VSEVOLOD GRIGOREVI ,  KRIVTSUN VLADIMIR MIHAILOVITCH ,  KOSHELEV KONSTANTIN NIKOLAEVIT ,  BANINE VADIM YEVGENYEVICH ,  IVANOV VLADIMIR VITAL EVTICH ,  KIEFT ERIK RENE ,  LOOPSTRA ERIK ROELOF ,  GAYAZOV ROBERT RAFILEVITCH ,  FRIJNS OLAV WALDEMAR VLADIMIR

IPC: G21K5/00 ,  F28D15/02 ,  G03F7/00 ,  G03F7/20 ,  G21K5/02 ,  G21K5/08 ,  H01L21/027 ,  H05G2/00 ,  H05H1/24

Abstract: A radiation source comprises an anode and a cathode that are configured and arranged to create a discharge in a gas or vapor in a space between anode and cathode and to form a plasma pinch so as to generate electromagnetic radiation. The gas or vapor may comprise xenon, indium, lithium and/or tin. To improve heat dissipation, the radiation source comprises a plurality of discharge elements, each of which is only used for short intervals, after which another discharge element is selected. To improve the exact timing of the pinch formation and thus the pulse of EUV radiation, the radiation source comprises a triggering device. To improve the conversion efficiency, the radiation source is constructed to have a low inductance, and operated in a self-triggering regime.

公开(公告)号：SG153664A1

公开(公告)日：2009-07-29

申请号：SG2007016173

申请日：2003-09-17

Applicant: ASML NETHERLANDS BV

Inventor： STEVENS LUCAS HENRICUS JOHANNES ,  SIDELKOV YURII VICTOROVITCH ,  KOLOSHNIKOV VSEVOLOD GRIGOREVITECH ,  KRIVTSUN VLADIMIR MIHAILOVITCH ,  KOSHELEV KONSTANTIN NIKOLAEVITCH ,  BANINE VADIM YEVGENYEVICH ,  IVANOV VLADIMIR VITALAEEVITCH ,  KIEFT ERIK RENE ,  ROELEF LOOPSTRA ERIK ,  GAYAZOV ROBERT RAFILEVITCH ,  FRIJNS OLAV WALDEMAR VLADIMIR

IPC: G21K5/00 ,  F28D15/02 ,  G03F7/20 ,  G21K5/02 ,  G21K5/08 ,  H01L21/027 ,  H05G2/00 ,  H05H1/24 ,  G03B27/42 ,  G21K5/10 ,  H01J37/08

Abstract: Radiation Source, Lithographic Apparatus, and Device Manufacturing Method. A radiation source comprises an anode and a cathode that are configured and arranged to create a discharge in a gas or vapor in a space between anode and cathode and to form a plasma pinch so as to generate electromagnetic radiation. The gas or vapor may comprise xenon, indium, lithium and/or tin. To improve heat dissipation, the radiation source comprises a plurality of discharge elements, each of which is only used for short intervals, after which another discharge element is selected.To improve the exact timing of the pinch formation and thus the pulse of EUV radiation, the radiation source comprises a triggering device.To improve the conversion efficiency, the radiation source is constructed to have a low inductance, and operated in a self- triggering regime.

公开(公告)号：SG115621A1

公开(公告)日：2005-10-28

申请号：SG200400813

申请日：2004-02-20

Applicant: ASML NETHERLANDS BV ,  ZEISS CARL SMT AG

Inventor： KURT RALPH ,  VAN BEEK MICHAEL CORNELIS ,  DUISTERWINKEL ANTONIE ELLERT ,  KIEFT ERIK RENE ,  MEILING HANS ,  MERTENS BASTIAAN MATTHIAS ,  MOORS JOHANNES HUBERTUS JOSEPH ,  STEVENS LUCAS HENRICUS JOHANNE ,  WOLSCHRIJN BASTIAAN THEODOOR

IPC: G01N21/94 ,  G01N21/27 ,  G01N21/33 ,  G01N21/35 ,  G01N21/956 ,  G03F7/20 ,  G21K5/00 ,  G21K5/02 ,  H01L21/027 ,  G01N21/15 ,  G01M11/00

Abstract: A measuring device for determining contamination of a surface of a component in an lithographic projection apparatus. The measuring device includes a radiation transmitter for transmitting radiation on at least a part of the surface and a radiation receiver for receiving radiation from the component. A processor is communicatively connected to the receiver, for deriving a property of received radiation and deriving a property of the contamination from the property of received radiation.