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    Measuring substrate, substrate table, lithographic apparatus, calculating method for alignment beam angle in alignment system, and alignment verification system
    1.
    发明专利
    Measuring substrate, substrate table, lithographic apparatus, calculating method for alignment beam angle in alignment system, and alignment verification system 有权
    测量基板，基板表，平面设备，对准系统中对准光束角的计算方法和对准验证系统

    公开(公告)号：JP2006114916A

    公开(公告)日：2006-04-27

    申请号：JP2005300405

    申请日：2005-10-14

    Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

    Inventor： SMEETS ERIK MARIE JOSE ,  BIJNEN FRANSISCUS GODEFRIDUS C ,  PHILLIPPS GEOFFREY NORMAN

    IPC: H01L21/027 ,  G01B11/26 ,  G03F9/00

    CPC classification number: G03F9/7019 ,  G03F9/7003 ,  G03F9/7011 ,  G03F9/7076

    Abstract: PROBLEM TO BE SOLVED: To improve a calculating method for an alignment beam angle of an alignment system, and a verification method for front surface-rear surface alignment (FTBA) error.
    SOLUTION: To calculate the alignment beam angle of the alignment system of a lithography apparatus, two alignment mark positions are measured, and the two alignment marks are formed on a measuring substrate, or arranged on a substrate table of the lithography apparatus. A second mark is covered with a transparent plate, and the two mark positions are measured with the alignment system. By refraction of the alignment beam by the transparent plate, the alignment beam returning to the alignment system shifts. The second mark is measured while being out of alignment due to shift of the alignment beam. Since the distance between two marks has been known, the shift can be calculated. The shift is used for calculation for the alignment beam angle, and the verification method for the FTBA error is improved by the angle.
    COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题：改进对准系统的对准光束角度的计算方法以及前表面后方对准（FTBA）误差的验证方法。 解决方案：为了计算光刻设备的对准系统的对准光束角度，测量两个对准标记位置，并且两个对准标记形成在测量基板上，或者布置在光刻设备的基板台上。 第二个标记用透明板覆盖，两个标记位置用对准系统测量。 通过透明板折射对准光束，返回到对准系统的对准光束发生偏移。 由于对准光束的偏移，第二个标记被测量为不对准。 由于两个标记之间的距离已知，所以可以计算偏移。 该偏移用于对准光束角的计算，FTBA误差的验证方法由角度提高。 版权所有（C）2006，JPO＆NCIPI

    Lithography method and patterning device
    2.
    发明专利
    Lithography method and patterning device 有权
    LITHOGRAPHY方法和绘图设备

    公开(公告)号：JP2008042194A

    公开(公告)日：2008-02-21

    申请号：JP2007195647

    申请日：2007-07-27

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： PHILLIPPS GEOFFREY NORMAN ,  GUI CHENG-QUN ,  PELLENS RUDY JAN MARIA ,  LEONARDUS VAN DIJK PAULUS WILH

    IPC: H01L21/027 ,  G03F1/08 ,  G03F7/20

    CPC classification number: G03F7/70475 ,  G03F7/70633

    Abstract: PROBLEM TO BE SOLVED: To perform alignment with high accuracy. SOLUTION: A lithography method includes patterning a radiation beam by a pattering device. The patterning device includes at least two image patterning portions and at least two methodology mark patterning portions. The method includes successively projecting at least two image portions of a patterned radiation beam on the target potion of a substrate so that projected image portions are mutually adjoining on the substrate to form a combined image collectively on the substrate. The method includes projecting at least two images respectively, and projecting the methodology mark on the substrate at the same time in the region outside of the combined image to measure the alignment of the methodology mark to define the relative position of at least two figure portions. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：以高精度执行对准。 解决方案：光刻方法包括通过图案化装置对辐射束进行图案化。 图案形成装置包括至少两个图像构图部分和至少两个方法标记图案形成部分。 该方法包括将图案化的辐射束的至少两个图像部分连续地投射在基板的目标部分上，使得投影的图像部分在基板上相互邻接以在基板上共同形成组合图像。 该方法包括分别投影至少两个图像，并且在组合图像之外的区域中同时在基板上投影方法标记，以测量方法标记的对准以限定至少两个图形部分的相对位置。 版权所有（C）2008，JPO＆INPIT

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