公开(公告)号：JP2001250855A

公开(公告)日：2001-09-14

申请号：JP2000380352

申请日：2000-12-14

Applicant: AXCELIS TECH INC

Inventor： RYAN KEVIN T ,  KELLERMAN PETER L ,  FURANKU SHINKUREA ,  ALLEN ERNEST E JR ,  FISH ROGER B

IPC: B65G49/07 ,  C23C14/50 ,  C23C16/44 ,  H01L21/677 ,  H01L21/68 ,  H01L21/687

Abstract: PROBLEM TO BE SOLVED: To provide a wafer handling system for increasing wafer treatment capacity by decreasing contamination in a treatment chamber, and a wafer carrying method for it. SOLUTION: A wafer handling system 200 is provided with a load lock chamber 206 for wafers, a treatment chamber 202 for wafers, and a carrying chamber 204 that connects the load lock chamber to the treatment chamber and includes a wafer carrying mechanism. A wafer mechanism is provided with a carrying arm that is connected to one portion of the carrying chamber 204 forming one axis rotatably, and the carrying arm can be rotated around a single axis for carrying the wafers between the load lock chamber 206 and the treatment chamber by single axis operation. The method for carrying wafers includes steps for placing the wafers in the load lock chamber 206, rotating the carrying arm into the load lock chamber to take out the wafers, rotating the carrying arm out of the load lock chamber 206 into the treatment chamber, and placing the wafers in the treatment chamber 202.

公开(公告)号：JP2002151429A

公开(公告)日：2002-05-24

申请号：JP2001219685

申请日：2001-07-19

Applicant: AXCELIS TECH INC

Inventor： DIVERGILIO WILLIAM FRANK ,  KELLERMAN PETER L ,  RYAN KEVIN T

IPC: H05H1/46 ,  B01J19/08 ,  C23C14/48 ,  H01J37/32 ,  H01L21/265 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/36

Abstract: PROBLEM TO BE SOLVED: To provide an RF plasma generator provided with a resonance circuit type oscillator, and also to provide a wafer processing system. SOLUTION: The wafer processing system comprises a wafer handling system for introducing a wafer into a processing chamber 20, and has an oscillator 80 that is operatively coupled to an antenna 30a for generating a plasma 94 in the processing chamber. The plasma 94 and the antenna 30a form a resonance circuit together with the oscillator 80. During plasma ignition, the oscillator changes associated output characteristics based on a change in load in the resonance circuit.

公开(公告)号：JP2001267266A

公开(公告)日：2001-09-28

申请号：JP2000390650

申请日：2000-12-22

Applicant: AXCELIS TECH INC

Inventor： BERNSTEIN JAMES DAVID ,  KELLERMAN PETER L ,  DENHOLM STUART A

IPC: B01J19/08 ,  C23C14/04 ,  C23C14/48 ,  H01J37/32 ,  H01L21/223 ,  H01L21/265 ,  H01L21/266

Abstract: PROBLEM TO BE SOLVED: To solve a problem pertaining to emission gas of photoresist resulting from implantation of plasma immersion ions. SOLUTION: Ions are implanted into a substrate having a photoresist P by plasma immersion ion implantation method. In this method, first gas is ionized in a processing chamber 12 to generate electrically inactive ions which are caused to react on the photoresist to generate an emission gas substance and that gas substance is discharged constantly from the processing chamber 12 so that it is not ionized. Furthermore, second gas is ionized in the processing chamber 12 to generate electrically active ions and ion species thereof charged positively are implanted into the surface of the substrate. Since the photoresist is hardened prior to ion implantation, gas is ionized in the processing chamber to generate positive ions and electrons. Electrons are attracted first to the substrate and positive ions are implanted into the substrate after the photoresist is hardened thus preventing gas emission of photoresist.

公开(公告)号：JP2001250856A

公开(公告)日：2001-09-14

申请号：JP2000380353

申请日：2000-12-14

Applicant: AXCELIS TECH INC

Inventor： RYAN KEVIN T ,  KELLERMAN PETER L ,  FURANKU SHINKUREA ,  ALLEN ERNEST E JR ,  FISH ROGER B

IPC: B65G49/00 ,  C23C14/48 ,  F16K3/314 ,  H01L21/00 ,  H01L21/02 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/677 ,  H01L21/68

Abstract: PROBLEM TO BE SOLVED: To provide a wafer treating device for increasing wafer treatment capacity by decreasing contamination in a treatment chamber, and a method for accessing the wafer treating device. SOLUTION: A wafer treating device 200 is provided with a treatment chamber 202 having upper and lower parts, and an annular ring valve 210 that is engaged to one of both the parts. The ring valve 210 can be operated to perform treatment by closing the treatment chamber 202 at a first position, and to perform access by releasing the treatment chamber 202 at a second position. The ring valve at the first position forms a uniform surface at the inner periphery part of the closed treatment chamber, thus making uniform the treatment state in the treatment chamber. The access method for that purpose includes a step for closing an access port in the treatment chamber for moving the ring valve 202 in the treatment chamber from the first position that cannot be accessed to the second position for opening the access port.

公开(公告)号：AU2003274407A1

公开(公告)日：2004-05-13

申请号：AU2003274407

申请日：2003-10-22

Applicant: AXCELIS TECH INC

Inventor： KELLERMAN PETER L ,  RYAN KEVIN T ,  MITCHELL ROBERT J

IPC: H01L21/00

Abstract: An apparatus for processing a semiconductor wafer. The apparatus according to the present invention comprises a wafer port flange including an electrostatic chuck and a top plate including a lip. The electrostatic chuck defines a circumferential gas distribution groove and a gas gap positioned between a backside of a semiconductor wafer and the electrostatic chuck. The lip is positioned to shield an outside band of the wafer. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. 37 CFR §1.72(b).

公开(公告)号：WO2004038766A3

公开(公告)日：2004-07-22

申请号：PCT/IB0304652

申请日：2003-10-22

Applicant: AXCELIS TECH INC

Inventor： KELLERMAN PETER L ,  RYAN KEVIN T ,  MITCHELL ROBERT J

IPC: H01L21/00

CPC classification number: H01L21/67109

Abstract: An apparatus for processing a semiconductor wafer. The apparatus according to the present invention comprises a wafer port flange including an electrostatic chuck and a top plate including a lip. The electrostatic chuck defines a circumferential gas distribution groove and a gas gap positioned between a backside of a semiconductor wafer and the electrostatic chuck. The lip is positioned to shield an outside band of the wafer. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract translation: 一种用于处理半导体晶片的设备。 根据本发明的设备包括包括静电卡盘的晶片端口法兰和包括唇缘的顶板。 静电卡盘限定周向气体分布凹槽和位于半导体晶片的背侧和静电卡盘之间的气隙。 唇部被定位以屏蔽晶片的外部带。 要强调的是，提供这个摘要是为了遵守需要摘要的规则，这将允许搜索者或其他读者快速确定技术公开的主题。 提交时的理解是，它不会被用来解释或限制权利要求的范围或含义。