公开(公告)号：JP2002151429A

公开(公告)日：2002-05-24

申请号：JP2001219685

申请日：2001-07-19

Applicant: AXCELIS TECH INC

Inventor： DIVERGILIO WILLIAM FRANK ,  KELLERMAN PETER L ,  RYAN KEVIN T

IPC: H05H1/46 ,  B01J19/08 ,  C23C14/48 ,  H01J37/32 ,  H01L21/265 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/36

Abstract: PROBLEM TO BE SOLVED: To provide an RF plasma generator provided with a resonance circuit type oscillator, and also to provide a wafer processing system. SOLUTION: The wafer processing system comprises a wafer handling system for introducing a wafer into a processing chamber 20, and has an oscillator 80 that is operatively coupled to an antenna 30a for generating a plasma 94 in the processing chamber. The plasma 94 and the antenna 30a form a resonance circuit together with the oscillator 80. During plasma ignition, the oscillator changes associated output characteristics based on a change in load in the resonance circuit.

公开(公告)号：JP2001222970A

公开(公告)日：2001-08-17

申请号：JP2000387423

申请日：2000-12-20

Applicant: AXCELIS TECH INC

Inventor： SAADATMAND KOUROSH ,  SWENSON DAVID RICHARD ,  DIVERGILIO WILLIAM FRANK ,  QUINN STEPHEN MICHAEL ,  WAN ZHIMIN ,  BENVENISTE VICTOR M

IPC: H01J37/04 ,  H01J37/12 ,  H01J37/16 ,  H01J37/317

Abstract: PROBLEM TO BE SOLVED: To provide an electrical insulator tetrode lens assembly preventing insulation breakdown caused by voltage. SOLUTION: The electrostatic tetrode lens assembly 60 comprises four electrodes, namely, a first electrode pair 84a, 84c each of which is laid out from the axial line 86 to the outside of the radial direction approximately 90 deg. apart and located at the opposite sides 180 deg. apart and a second electrode pair 84b, 84d located at opposite sides 180 deg. apart, the housing 62 equipped with the installation surface 64 to install the electrostatic tetrode lens assembly 60 on the ion injection device, the first and the second electric leads 104, 108 to supply power to the above No.1 and No.2 electrode pairs 104, 108, and a plural number of electric insulation members 92 made of a glass material including the first, the second electric insulation members to mount the first, the second electrode pairs on the housing. The insulation materials have a resistance to the accumulated graphite scattered from the electrodes and diminish breakdown by a high voltage/current.

公开(公告)号：JP2002110080A

公开(公告)日：2002-04-12

申请号：JP2001223304

申请日：2001-07-24

Applicant: AXCELIS TECH INC

Inventor： BIKUTAA MOORISU BENBENISUTE ,  YE JOHN ,  DIVERGILIO WILLIAM FRANK

IPC: G21K5/04 ,  H01J37/05 ,  H01J37/317 ,  H01L21/265 ,  H01P11/00

Abstract: PROBLEM TO BE SOLVED: To provide an ion implantation device, a waveguide and a mass analyzer therefor, and a method of distributing microwave output to a beam guide of the mass analyzer. SOLUTION: The ion implantation device according to the invention comprises a beam guide 200 of mass analysis magnet, a power source for providing electric field, and a magnetic device 170 providing a multicusped magnetic field and having multiple magnets 220. The power source and the magnets 220 interact with each other and cause resonance of an electron cyclotron along a passage. The multicusped magnetic field is superimposed on the dipole field at a specified field strength in the passage of the mass analyzer where it interacts with the electric field of RF or microwaves. The waveguide 250 according to the invention combines the electric field with beam plasma along the passage of the mass analyzer, thereby improving the ECR status. In the invention, beam plasma is enhanced in the dipole field of the mass analyzer for low-energy ion beams, without introducing plasma generated outside.

公开(公告)号：JP2002134049A

公开(公告)日：2002-05-10

申请号：JP2001223303

申请日：2001-07-24

Applicant: AXCELIS TECH INC

Inventor： BIKUTAA MOORISU BENBENISUTE ,  DIVERGILIO WILLIAM FRANK ,  FURANKU SHINKUREA

IPC: G21K5/04 ,  H01J37/05 ,  H01J37/30 ,  H01J37/317 ,  H01J37/32 ,  H01J49/42 ,  H01L21/265

Abstract: PROBLEM TO BE SOLVED: To provide a mass spectrometer, an ion implantation apparatus, and an ion beam sealing method. SOLUTION: The ion implantation apparatus includes a mass spectrometry magnet 114, a power source 174 applying an electric field to a passage 139, and a magnetic apparatus 170 applying a multi-cusp magnetic field to the passage 139. The power source 174 and the magnetic apparatus 170 collaborate each other in giving an electron cyclotron resonance(ECR) condition at lease along a part of the passage 139. The mult-cusp magnetic field is polymerized with a dipole magnetic field and interacts with an electric field of RF or a microwave. A waveguide to improve ECR condition is also included. A beam plasma is enhanced in the dipole magnetic field of the mass spectrometer without a plasma generated outside. Moreover, the ion beam is sealed in the low- energy ion implantation apparatus.

公开(公告)号：AU2002216269A1

公开(公告)日：2002-07-16

申请号：AU2002216269

申请日：2001-12-27

Applicant: AXCELIS TECH INC

Inventor： DIVERGILIO WILLIAM FRANK ,  SWENSON DAVID D ,  SAADATMAND KOUROSH

IPC: C23C14/48 ,  H01J37/317 ,  H01L21/265 ,  H05H9/00 ,  H01J37/30

Abstract: A method and apparatus are disclosed for accelerating ions in an ion implantation system. An ion accelerator is provided which comprises a plurality of energizable electrodes energized by a variable frequency power source, in order to accelerate ions from an ion source. The variable frequency power source allows the ion accelerator to be adapted to accelerate a wide range of ion species to desired energy levels for implantation onto a workpiece, while reducing the cost and size of an ion implantation accelerator.

公开(公告)号：SG78388A1

公开(公告)日：2001-02-20

申请号：SG1999004236

申请日：1999-09-01

Applicant: AXCELIS TECH INC

Inventor： MCINTYRE EDWARD KIRBY JR ,  DIVERGILIO WILLIAM FRANK ,  SAADATMAND KOUROSH ,  SCHERER ERNST FREDERICK ,  SWENSON DAVID RICHARD ,  WENZEL KEVIN WAYNE

IPC: H01L21/66 ,  C23C14/48 ,  H01J37/304 ,  H01J37/317 ,  H01J49/40 ,  H01J49/44 ,  H01L21/265 ,  H01J37/244

Abstract: In accordance with the present invention, an ion implanter (10) including a time of flight energy measurement apparatus (200) for measuring and controlling the energy of an ion beam (14). The ion implanter (10) includes an ion source (12) for generating the ion beam (14), an ion acceleration assembly (18) for accelerating the beam (14) resulting in the beam (14) comprising a series of ion pulses (P0, P1, ...., P(n+1)) having a predetermined frequency (F) and beam forming and directing structure (50) for directing the ion beam (14) at workpieces (21) supported in an implantation chamber (22) of the implanter (10). The time of flight energy measurement apparatus (200) includes spaced apart first and second sensors (210, 310, 220, 320), timing circuitry (204) and conversion circuitry (206). The time of flight energy measurement apparatus (200) measures an average kinetic energy of an ion (E(ion)) included in a selected ion pulse of the ion beam. The first sensor (210, 310) and a second sensor (220, 320) are disposed adjacent the ion beam (14) and spaced a predetermined distance apart, the second sensor (220, 320) being downstream of the first sensor (210, 310). The first sensor (210, 310) generates a signal when an ion pulse of the ion beam (14) passes the first sensor (210, 310) and the second sensor (220, 320) generates a signal when an ion pulse of the ion beam (14) passes the second sensor (220, 320). The timing circuitry (204) of the energy measurement apparatus (200) is electrically coupled to the first and second sensors (210, 310, 220, 320) and determines an elapsed time, t, for the selected ion pulse to traverse the predetermined distance between the first and second sensors (210, 310, 220, 320). The timing circuitry (204) calculates an average number of ion pulses. N. in the ion beam (14) between the first and second sensors (210, 310, 220, 320) based on the approximation of the ion beam energy (E(approx.)) and calculates an offset time. t(offset). for the selected ion pulse using the formula, t(offset) = N x T. The timing circuitry (204) than determines the elapsed time, t. The conversion circuitry (206) converts the elapsed time. t. for the selected ion pulse into a measure of the energy of the ion beam (E(ion)).

公开(公告)号：WO02054443A2

公开(公告)日：2002-07-11

申请号：PCT/GB0105768

申请日：2001-12-27

Applicant: AXCELIS TECH INC ,  EATON LTD

Inventor： SAADATMAND KOUROSH ,  DIVERGILIO WILLIAM FRANK ,  SWENSON DAVID D

IPC: C23C14/48 ,  H01J37/317 ,  H01L21/265 ,  H05H9/00 ,  H01J37/30

CPC classification number: H05H9/00

Abstract: A method and apparatus are disclosed for accelerating ions in an ion implantation system. An ion accelerator is provided which comprises a plurality of energizable electrodes energized by a variable frequency power source, in order to accelerate ions from an ion source. The variable frequency power source allows the ion accelerator to be adapted to accelerate a wide range of ion species to desired energy levels for implantation onto a workpiece, while reducing the cost and size of an ion implantation accelerator.

Abstract translation: 公开了用于在离子注入系统中加速离子的方法和装置。 提供了一种离子加速器，其包括由可变频率电源激励的多个可激励电极，以便从离子源加速离子。 可变频率电源允许离子加速器适于将宽范围的离子种类加速到期望的能级以用于植入到工件上，同时降低离子注入加速器的成本和尺寸。

公开(公告)号：WO0193646A3

公开(公告)日：2002-03-28

申请号：PCT/GB0102274

申请日：2001-05-22

Applicant: AXCELIS TECH INC ,  EATON LTD

Inventor： DIVERGILIO WILLIAM FRANK ,  SAADATMAND KOUROSH ,  SCHERER ERNST FREDERICK

IPC: H01J37/04 ,  H01J37/317 ,  H05H7/02

CPC classification number: H05H7/02

Abstract: An integrated RF amplifier (120) and resonator (100) is provided for use with an ion accelerator. The amplifier (120) includes an output substantially directly coupled with a resonator coil (L). The amplifier output may be coupled capacitively or inductively. In addition, an apparatus is provided for accelerating ions in an ion implanter. The apparatus comprises an amplifier (120) with an RF output (122), a tank circuit (100) with a coil (L) substantially directly coupled to the RF output (122) of the amplifier (120), and an electrode (108) connected to the coil (L) for accelerating ions. Also provided is a method (500) for coupling an RF amplifier (120) with a resonator (100) in an ion accelerator. The method comprises connecting (502) the RF output (122) of the amplifier (120) to a coupler, and locating (504) the coupler proximate the coil (L), thereby substantially directly coupling the RF output (122) of the amplifier (120) with the resonator coil (L).

Abstract translation: 提供集成RF放大器（120）和谐振器（100）以与离子加速器一起使用。 放大器（120）包括基本上直接与​​谐振器线圈（L）耦合的输出。 放大器输出可以电容或电感耦合。 此外，提供了用于加速离子注入机中的离子的装置。 该装置包括具有RF输出（122）的放大器（120），具有基本上直接耦合到放大器（120）的RF输出端（122）的线圈（L）的电路（108）和电极 ）连接到线圈（L），用于加速离子。 还提供了一种用于在离子加速器中将RF放大器（120）与谐振器（100）耦合的方法（500）。 该方法包括将放大器（120）的RF输出（122）连接（502）到耦合器，并将耦合器定位（504）靠近线圈（L），从而基本上直接耦合放大器的RF输出（122） （120）与谐振器线圈（L）。

公开(公告)号：DE60134091D1

公开(公告)日：2008-07-03

申请号：DE60134091

申请日：2001-07-13

Applicant: AXCELIS TECH INC

Inventor： BENVENISTE VICTOR MAURICE ,  YE JOHN ,  DIVERGILIO WILLIAM FRANK

IPC: G21K5/04 ,  H01J37/317 ,  H01J37/02 ,  H01J37/05 ,  H01J37/32 ,  H01L21/265 ,  H01P3/16 ,  H01P11/00

Abstract: An apparatus and method for providing a low energy, high current ion beam for ion implantation applications are disclosed. The apparatus includes a mass analysis magnet (114) mounted in a passageway (139, 202) along the path (129) of an ion beam, a power source (174) adapted to provide an electric field in the passageway (139, 202), and a magnetic device (170) adapted to provide a multi-cusped magnetic field in the passageway (139, 202), which may include a plurality of magnets (220) mounted along at least a portion of the passageway (139, 202). The power source (174) and the magnets (220) may cooperatively interact to provide an electron cyclotron resonance (ECR) condition along at least a portion of the passageway (139, 202). The multi-cusped magnetic field may be superimposed on the dipole field at a specified field strength in a region of the mass analyzer passageway to interact with an electric field of a known RF or microwave frequency for a given low energy ion beam. The invention further comprises a mass analyzer waveguide (250) adapted to couple the electric field to the beam plasma consistently along the length of the mass analyzer passageway (202) to thereby improve the creation of the ECR condition. The invention thus provides enhancement of beam plasma within a mass analyzer dipole magnetic field for low energy ion beams without the introduction of externally generated plasma. The invention further includes a method (300) of providing ion beam containment in a low energy ion implantation system, as well as an ion implantation system.

公开(公告)号：NZ522808A

公开(公告)日：2004-06-25

申请号：NZ52280801

申请日：2001-05-22

Applicant: AXCELIS TECH INC

Inventor： DIVERGILIO WILLIAM FRANK ,  SAADATMAND KOUROSH ,  SCHERER ERNST FREDERICK

IPC: H01J37/04 ,  H01J37/317 ,  H05H7/02

Abstract: An integrated RF amplifier (120) and resonator (100) is provided for use with an ion accelerator. The amplifier (120) includes an output substantially directly coupled with a resonator coil (L). The amplifier output may be coupled capacitively or inductively. In addition, an apparatus is provided for accelerating ions in an ion implanter. The apparatus comprises an amplifier (120) with an RF output (122), a tank circuit (100) with a coil (L) substantially directly coupled to the RF output (122) of the amplifier (120), and an electrode (108) connected to the coil (L) for accelerating ions. Also provided is a method (500) for coupling an RF amplifier (120) with a resonator (100) in an ion accelerator. The method comprises connecting (502) the RF output (122) of the amplifier (120) to a coupler, and locating (504) the coupler proximate the coil (L), thereby substantially directly coupling the RF output (122) of the amplifier (120) with the resonator coil (L).