Abstract:
A supplemental ion source (74) for a plasma processing system (10) having a plasma processing chamber (16) is provided. The ion source (74) comprises: a signal generator (82, 96) for generating an output signal; and an antenna assembly (76, 90) located proximate the process chamber (16), whereby energization of the antenna assembly by the signal generator ionizes plasma confined within the processing chamber (16) to create plasma having a substantial ionized content. The antenna assembly (76, 90) is generally planar in shape and may take the form of a plate or coil antenna. The signal generator preferably generates an output signal in the radio frequency (RF) range. The supplemental energizer operates independently of the first plasma source such that either, or both, may be switched on or off at any time.
Abstract:
A loadlock chamber assembly includes a loadlock chamber, a sub-chamber removably attached to the loadlock chamber and a first robot arm having a primary pivot axis within the sub-chamber, wherein the first robot arm can move a substrate from a position approximately in a center of the loadlock chamber to a position outside the loadlock chamber.
Abstract:
A loadlock chamber assembly includes a loadlock chamber, a sub-chamber removably attached to the loadlock chamber and a first robot arm having a primary pivot axis within the sub-chamber, wherein the first robot arm can move a substrate from a position approximately in a center of the loadlock chamber to a position outside the loadlock chamber.