公开(公告)号：WO2015168237A1

公开(公告)日：2015-11-05

申请号：PCT/US2015/028201

申请日：2015-04-29

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： JEN, Causon Ko-Chuan ,  BINTZ, William

IPC: H01J37/317 ,  H01J37/20 ,  H01J37/147

CPC classification number: H01J37/1474 ,  H01J37/1478 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/08 ,  H01J2237/1506 ,  H01J2237/151 ,  H01J2237/152 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/31701 ,  H01J2237/31708

Abstract: An ion implantation system and method is provided for varying an angle of incidence of a scanned ion beam relative to the workpiece concurrent with the scanned ion beam impacting the workpiece. The system has an ion source configured to form an ion beam and a mass analyzer configured to mass analyze the ion beam. An ion beam scanner is configured to scan the ion beam in a first direction, therein defining a scanned ion beam. A workpiece support is configured to support a workpiece thereon, and an angular implant apparatus is configured to vary an angle of incidence of the scanned ion beam relative to the workpiece. The angular implant apparatus comprises one or more of an angular energy filter and a mechanical apparatus operably coupled to the workpiece support, wherein a controller controls the angular implant apparatus, thus varying the angle of incidence of the scanned ion beam relative to the workpiece concurrent with the scanned ion beam impacting the workpiece.

Abstract translation: 提供离子注入系统和方法，用于与扫描的离子束同时冲击工件，改变扫描离子束相对于工件的入射角。 该系统具有构造成形成离子束的离子源和被配置为质量分析离子束的质量分析器。 离子束扫描器被配置成沿着第一方向扫描离子束，其中限定扫描的离子束。 工件支撑件构造成在其上支撑工件，并且角度注入装置被配置为改变扫描离子束相对于工件的入射角。 角植入装置包括角度能量过滤器和可操作地耦合到工件支撑件的机械装置中的一个或多个，其中控制器控制角度注入装置，从而改变扫描离子束相对于工件的入射角度，同时与 扫描的离子束撞击工件。

公开(公告)号：WO2021159045A1

公开(公告)日：2021-08-12

申请号：PCT/US2021/016996

申请日：2021-02-08

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： JEN, Causon ,  SATOH, Shu ,  BONACORSI, Genise ,  BINTZ, William

IPC: H01J37/317 ,  H01J37/05

Abstract: A method for implanting high charge state ions into a workpiece while mitigating trace metal contamination includes generating desired ions at a first charge state from a desired species in an ion source, as well as generating trace metal ions of a contaminant species in a first ion beam. A charge-to-mass ratio of the desired ions and the trace metal ions is equal. The desired ions and trace metal ions are extracted from the ion source. At least one electron stripped from the desired ions to define a second ion beam of the desired ions at a second charge state and the trace metal ions. Only the desired ions from the second ion beam are selectively passed only through a charge selector to define a final ion beam of the desired ions at the second charge state and no trace metal ions, and the desired ions of the second charge state are implanted into a workpiece.

公开(公告)号：WO2023014962A1

公开(公告)日：2023-02-09

申请号：PCT/US2022/039553

申请日：2022-08-05

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： JEN, Causon ,  DELUCA, James ,  BINTZ, William

IPC: H01J37/04 ,  H01J37/147

Abstract: An ion implantation system and method that selectively varies an ion beam energy to a workpiece in sequential passes thereof in front of the beam. The implantation system has an ion source (102) for generating the ion beam and an acceleration / deceleration stage (114) for varying the energy of the ion beam based on an electrical bias supplied to the acceleration deceleration stage. A workpiece support is provided immediately downstream of the acceleration / deceleration stage to support a workpiece through the selectively varied energy ion beam, and can be thermally controlled to control a temperature of the workpiece during the variation of energy of the beam. The energy can be varied while the workpiece is positioned in front of the beam, and a controller can control the electrical bias to control the variation in energy of the ion beam, where a plurality of process recipes can be attained during a single positioning of the workpiece on the workpiece support.