公开(公告)号：KR20200125934A

公开(公告)日：2020-11-05

申请号：KR20207024101

申请日：2019-02-21

Applicant: BASF SE

Inventor： HADZIC ADMIR ,  KAERKKAINEN ARI ,  PIRINEN SAMI ,  HANNU KUURE MILJA ,  LEIVO JARKKO ,  KUVAJA RAUNA LEENA ,  GORDON GRAEME ,  ASAKURA TOSHIKAGE ,  PSCHIRER NEIL GREGORY ,  YAMAMOTO HIROSHI

IPC: C03C17/30 ,  C03C17/25 ,  C08G77/20 ,  C08G77/58 ,  C09D183/04 ,  C09D183/14

Abstract: 본발명은, 준금속화합물을포함하는 2종의전구체조성물을제조하는단계; 및그 후에이들을배합하는단계이며, 여기서배합전 1종의전구체조성물을가수분해시키는단계를포함하는, 기판상에박막을제조하는방법에관한것이다. 본발명은추가로, 상기방법에의해수득가능한박막을포함하는물품및 다층구조물, 상기전구체조성물들을포함하는조성물, 상기전구체조성물들을포함하는부분들의키트, 및기판상에박막을제조하기위한상기조성물및 부분들의키트의용도에관한것이다.

公开(公告)号：EP3044208A4

公开(公告)日：2017-08-09

申请号：EP14844439

申请日：2014-09-08

Applicant: BASF SE

Inventor： KUNIMOTO KAZUHIKO ,  KURA HISATOSHI ,  YAMAMOTO HIROSHI ,  NAKAGAWA YUMIKO ,  ASAKURA TOSHIKAGE ,  SAMESHIMA KAORI

IPC: G03F7/031 ,  C07C251/60 ,  C07C251/66 ,  C07D209/12 ,  C07D307/56 ,  C07D307/80 ,  C07D307/83 ,  C07D307/86 ,  C07D307/91 ,  C07D307/92 ,  C07D333/56 ,  C07D407/12 ,  C07D409/06 ,  G02B5/20 ,  G02B5/22 ,  G03F7/00 ,  G03F7/20 ,  G03F7/32

CPC classification number: C07D409/06 ,  C07D209/12 ,  C07D307/56 ,  C07D307/80 ,  C07D307/83 ,  C07D307/86 ,  C07D307/91 ,  C07D307/92 ,  C07D333/56 ,  C07D407/12 ,  G02B5/201 ,  G02B5/223 ,  G03F7/0007 ,  G03F7/031 ,  G03F7/20 ,  G03F7/32

公开(公告)号：DE60141339D1

公开(公告)日：2010-04-01

申请号：DE60141339

申请日：2001-09-18

Applicant: BASF SE

Inventor： YAMATO HITOSHI ,  ASAKURA TOSHIKAGE ,  MATSUMOTO AKIRA ,  OHWA MASAKI

IPC: G03F7/004 ,  C07C309/63 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

Abstract: New oxime sulfonate compounds of the formula I, II, III, IV, V, VI and VII R 1 is for example C 1 -C 18 alkylsulfonyl, R 2 is halogen or C 1 -C 10 haloalkyl; R 3 is for example unsubstitude or substituted phenylenedisulfonyl, diphenylenedisulfonyl, or oxydiphenylenedisulfonyl; Ar 1 is for example a direct bond, C 1 -C 12 alkylene; -O-C-bond or a -O-Si-bond which cleaves upon the action of an acid; A 1 , A 2 , A 3 , A 4 , A 5 , A 6 , A 7 , A 8 , A 9 , A 10 , A 11 and A 12 are for example a direct bond, -O-, or -S-, or are C 1 -C 12 alkylene or phenylene unsubstituted or substituted; Y 1 is C 1 -C 12 alkylene which is for example substituted by OR 4 , or SR 7 ; Y 2 is e.g. a trivalent radical of C 1 -C 12 alkylene; Y 3 is e.g. a tetravalent radical of C 1 -C 12 alkylene; X is halogen; Ar' 1 is for example C 1 -C 12 alkyl which is unsubstituted or substituted; Ar'' 1 is for example phenylene; provided that at least one of the radicals Ar' 1 , Ar'' 1 , is substituted by 1 to 3 groups of example halogen; R 15 , R 16 , R 17 and R 18 e.g. hydrogen or phenyl; R 19 , R 20 , R 21 , R 22 R 23 are e.g. phenyl; are especially suitable for the preparation of photoresists.

公开(公告)号：AT458211T

公开(公告)日：2010-03-15

申请号：AT01985295

申请日：2001-09-18

Applicant: BASF SE

Inventor： YAMATO HITOSHI ,  ASAKURA TOSHIKAGE ,  MATSUMOTO AKIRA ,  OHWA MASAKI

IPC: G03F7/004 ,  C07C309/63 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

Abstract: New oxime sulfonate compounds of the formula I, II, III, IV, V, VI and VII R 1 is for example C 1 -C 18 alkylsulfonyl, R 2 is halogen or C 1 -C 10 haloalkyl; R 3 is for example unsubstitude or substituted phenylenedisulfonyl, diphenylenedisulfonyl, or oxydiphenylenedisulfonyl; Ar 1 is for example a direct bond, C 1 -C 12 alkylene; -O-C-bond or a -O-Si-bond which cleaves upon the action of an acid; A 1 , A 2 , A 3 , A 4 , A 5 , A 6 , A 7 , A 8 , A 9 , A 10 , A 11 and A 12 are for example a direct bond, -O-, or -S-, or are C 1 -C 12 alkylene or phenylene unsubstituted or substituted; Y 1 is C 1 -C 12 alkylene which is for example substituted by OR 4 , or SR 7 ; Y 2 is e.g. a trivalent radical of C 1 -C 12 alkylene; Y 3 is e.g. a tetravalent radical of C 1 -C 12 alkylene; X is halogen; Ar' 1 is for example C 1 -C 12 alkyl which is unsubstituted or substituted; Ar'' 1 is for example phenylene; provided that at least one of the radicals Ar' 1 , Ar'' 1 , is substituted by 1 to 3 groups of example halogen; R 15 , R 16 , R 17 and R 18 e.g. hydrogen or phenyl; R 19 , R 20 , R 21 , R 22 R 23 are e.g. phenyl; are especially suitable for the preparation of photoresists.