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公开(公告)号：KR20180039709A
公开(公告)日：2018-04-18
申请号：KR20187007107
申请日：2016-08-09
Applicant: BASF SE
Inventor： REICHARDT ROBERT , SIEBERT MAX , LAN YONGQING , LAUTER MICHAEL , USMAN IBRAHIM SHEIK ANSAR , GOLZARIAN REZA M , WEI TE YU , GUEVENC HACI OSMAN , PROELSS JULIAN , LEUNISSEN LEONARDUS
IPC: C09G1/02 , C09G1/04 , C09K3/14 , H01L21/306
CPC classification number: C09G1/02
Abstract: (i) 코발트및/또는 (ii) 코발트합금및 (iii) TiN 및/또는 TaN 을함유하는기판 (S) 의화학기계연마를위한화학기계연마 (CMP) 조성물 (Q) 의용도로서, 상기 CMP 조성물 (Q) 이하기를포함하는 CMP 조성물 (Q) 의용도: (E) 무기입자, (F) 아미노기및 산기 (Y) 를함유하는하나이상의유기화합물 (상기화합물은 n 개의아미노기및 n+1 개이상의산성프로톤을함유하고, n 은정수≥ 1 이다), (G) 각각의 CMP 조성물의총 중량에대해서, 0.2 wt.% 내지 2.5 wt.% 의양의하나이상의산화제, (H) 수성매질, CMP 조성물 (Q) 은 6 초과 9 미만의 pH 를가진다.
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公开(公告)号：SG11201704287TA
公开(公告)日：2017-07-28
申请号：SG11201704287T
申请日：2015-12-11
Applicant: BASF SE
Inventor： REICHARDT ROBERT , SIEBERT MAX , LAN YONGQING , LAUTER MICHAEL , USMAN IBRAHIM SHEIK ANSAR , GOLZARIAN REZA , GUEVENC HACI OSMAN , PROELSS JULIAN , LEUNISSEN LEONARDUS
Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a triazine derivative of the general formula (I) wherein R1, R2, R3, R4, R5 and R6 are independently from each other H, methyl, ethyl, propyl, butyl, pentyl, C2-C10-alkylcarboxylic acid, hydroxymethyl, vinyl or allyl (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.
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公开(公告)号：SG11201804636YA
公开(公告)日：2018-07-30
申请号：SG11201804636Y
申请日：2016-12-20
Applicant: BASF SE
Inventor： DÄSCHLEIN CHRISTIAN , SIEBERT MAX , LAUTER MICHAEL , PRZYBYLSKI PETER , PROELSS JULIAN , KLIPP ANDREAS , GUEVENC HACI OSMAN , LEUNISSEN LEONARDUS , BAUMANN ROELF-PETER , WEI TE YU
IPC: H01L21/321 , C11D3/00 , C11D3/37 , C11D11/00
Abstract: Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) one or more nonionic polymers selected from the group consisting of poly- acrylamides, polyhydroxyethyl(meth)acrylates (PHE(M)A), polyvinylpyrrolidone (PVP), polyvinyl alcohol (PVA), polymers of formula (I), and mixtures thereof, wherein R1 is hydrogen, methyl, ethyl, n-propyl, /so-propyl, n-butyl, iso-butyl, or sec-butyl, R2 is hydrogen or methyl, and n is an integer, (B) poly(acrylic acid) (PAA) or acrylic acid-maleic acid copolymer with a mass average molar mass (Mw) of up to 10,000 g/mol, and (C) water, wherein the pH of the composition is in the range of from 7.0 to 10.5.
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公开(公告)号：SG11201804637UA
公开(公告)日：2018-07-30
申请号：SG11201804637U
申请日：2016-12-20
Applicant: BASF SE
Inventor： DÄSCHLEIN CHRISTIAN , SIEBERT MAX , LAUTER MICHAEL , PRZYBYLSKI PETER , PROELSS JULIAN , KLIPP ANDREAS , GUEVENC HACI OSMAN , LEUNISSEN LEONARDUS , BAUMANN ROELF-PETER , WEI TE YU
IPC: C11D3/37 , C11D11/00 , H01L21/02 , H01L21/321
Abstract: Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) polyethylene glycol (PEG) with a mass average molar mass (Mw) in the range of from 400 to 8,000 g/mol, (B) an anionic polymer selected from the group consisting of poly(acrylic acid) (PAA), acrylic acid-maleic acid copolymers, polyaspartic acid (PASA), polyglutamic acid (PGA), polyvinylphosphonic acid, polyvinylsulfonic acid, poly(styrenesulfonic acid), polycarboxylate ethers (PCE), PEG-phosphorous acids, and copolymers of said polymers, and (C) water, wherein the pH of the composition is in the range of from 7.0 to 10.5.
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Patent Agency Ranking
公开(公告)号：SG11201810119PA
公开(公告)日：2018-12-28
申请号：SG11201810119P
申请日：2017-05-31
Applicant: BASF SE
Inventor： DAESCHLEIN CHRISTIAN , SIEBERT MAX , LAUTER MICHAEL , LEUNISSEN LEONARDUS , GARCIA ROMERO IVAN , GUEVENC HACI OSMAN , PRZYBYLSKI PETER , PROELSS JULIAN , KLIPP ANDREAS
Abstract: Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) one or more water-soluble nonionic copolymers of the general formula (I) and mixtures thereof, formula (I) wherein R1 and R3 are idependently from each other hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, iso-Butyl, or sec-butyl, R2 is methyl and x and y are an integer,1 (B)poly(acrylic acid) (PAA) oracrylic acid-maleic acid copolymer with a mass average molar mass (Mw) of up to 10,000 g/mol, and (C)water, wherein the pH of the composition is in the range of from 7.0 to 10.5.
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公开(公告)号：SG11201807364VA
公开(公告)日：2018-10-30
申请号：SG11201807364V
申请日：2017-03-13
Applicant: BASF SE
Inventor： LAUTER MICHAEL , GUEVENC HACI OSMAN , SIEBERT MAX , LAN YONGQING , USMAN IBRAHIM SHEIK ANSAR , GOLZARIAN REZA M , WEI TE YU
IPC: C09G1/04
Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a poly(amino acid) and or a salt thereof (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.
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公开(公告)号：SG11201704496RA
公开(公告)日：2017-07-28
申请号：SG11201704496R
申请日：2015-12-22
Applicant: BASF SE
Inventor： REICHARDT ROBERT , SIEBERT MAX , LAN YONGQING , LAUTER MICHAEL , USMAN IBRAHIM SHEIK ANSAR , GOLZARIAN REZA , GUEVENC HACI OSMAN , PROELSS JULIAN , LEUNISSEN LEONARDUS
IPC: C09G1/00
Abstract: A chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) containing (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) contains: (A) Inorganic particles, (B) a substituted aromatic compound with at least one carboxylic acid function as corrosion inhibitor, (C) at least one amino acid, (D) at least one oxidizer, (E) an aqueous medium, wherein the CMP composition (Q) has a pH of from 7 to 10.
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公开(公告)号：SG11201704280QA
公开(公告)日：2017-07-28
申请号：SG11201704280Q
申请日：2015-12-16
Applicant: BASF SE
Inventor： REICHARDT ROBERT , SIEBERT MAX , LAN YONGQING , LAUTER MICHAEL , USMAN IBRAHIM SHEIK ANSAR , GOLZARIAN REZA , GUEVENC HACI OSMAN , PROELSS JULIAN , LEUNISSEN LEONARDUS
IPC: C09G1/02 , H01L21/304 , H01L21/321
Abstract: Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt and / or co-balt alloy comprising substrates Abstract Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a substituted tetrazole derivative of the general formula (I), wherein R1 is H, hydroxy, alkyl, aryl, alkylaryl, amino, carboxyl, alkylcarboxyl, thio or alkylthio. (C) at least one amino acid (D) at least one oxidizer, (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.
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公开(公告)号：SG11201700255UA
公开(公告)日：2017-02-27
申请号：SG11201700255U
申请日：2015-07-14
Applicant: BASF SE
Inventor： REICHARDT ROBERT , SIEBERT MAX , LAN YONGQING , LAUTER MICHAEL , GUEVENC HACI OSMAN , PRÖLSS JULIAN , USMAN IBRAHIM SHEIK ANSAR , GOLZARIAN REZA
IPC: C09G1/00
Abstract: A chemical mechanical polishing (CMP) composition (Q) comprising (A) Colloidal or fumed inorganic particles (A) or a mixture thereof in a total amount of from 0.0001 to 2.5 wt.-% based on the total weight of the respective CMP composition (B) at least one amino acid in a total amount of from 0.2 to 1 wt.-% based on the total weight of the respective CMP composition (C) at least one corrosion inhibitor in a total amount of from 0.001 to 0.02 wt.-% based on the total weight of the respective CMP composition (D) hydrogen peroxide as oxidizing agent in a total amount of from 0.0001 to 2 wt.-% based on the total amount of the respective CMP composition (E) aqueous medium wherein the CMP composition (Q) has a pH in the range of from 6 to 9.5.
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