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    METHOD OF MAKING RADIATION-SENSITIVE SOL-GEL MATERIALS
    2.
    发明申请
    METHOD OF MAKING RADIATION-SENSITIVE SOL-GEL MATERIALS 审中-公开
    制造辐射敏感性溶胶凝胶材料的方法

    公开(公告)号：WO2012142126A3

    公开(公告)日：2013-05-02

    申请号：PCT/US2012033073

    申请日：2012-04-11

    Applicant: BREWER SCIENCE INC ,  LIN QIN ,  WANG YUBAO ,  FLAIM TONY D

    Inventor： LIN QIN ,  WANG YUBAO ,  FLAIM TONY D

    IPC: H01L21/027

    CPC classification number: G03F7/075 ,  G03F7/0045 ,  G03F7/038 ,  G03F7/0757 ,  G03F7/11 ,  G03F7/20

    Abstract: Radiation-sensitive sol-gel compositions are provided, along with methods of forming microelectronic structures and the structures thus formed. The compositions comprise a sol-gel compound and a base generator dispersed or dissolved in a solvent system. The sol-gel compound comprises recurring monomeric units comprising silicon with crosslinkable moieties bonded to the silicon. Upon exposure to radiation, the base generator generates a strong base, which crosslinks the sol-gel compound in the compositions to yield a crosslinked layer that is insoluble in developers or solvents. The unexposed portions of the layer can be removed to yield a patterned sol-gel layer. The invention can be used to form patterns from sol-gel materials comprising features having feature sizes of less than about 1 m.

    Abstract translation: 提供了辐射敏感的溶胶 - 凝胶组合物，以及形成微电子结构和如此形成的结构的方法。 组合物包含分散或溶解在溶剂体系中的溶胶 - 凝胶化合物和碱产生剂。 溶胶 - 凝胶化合物包括具有与硅结合的可交联部分的包含硅的重复单体单元。 暴露于辐射后，基底发生器产生强碱，其使组合物中的溶胶 - 凝胶化合物交联，得到不溶于显影剂或溶剂的交联层。 可以除去该层的未曝光部分以产生图案化的溶胶 - 凝胶层。 本发明可以用于形成包含特征尺寸小于约1μm的特征的溶胶 - 凝胶材料的图案。

    SPIN-ON SPACER MATERIALS FOR DOUBLE- AND TRIPLE-PATTERNING LITHOGRAPHY
    5.
    发明申请
    SPIN-ON SPACER MATERIALS FOR DOUBLE- AND TRIPLE-PATTERNING LITHOGRAPHY 审中-公开
    用于双重和三维图案的旋转间隔材料

    公开(公告)号：WO2010080789A2

    公开(公告)日：2010-07-15

    申请号：PCT/US2010020199

    申请日：2010-01-06

    Applicant: BREWER SCIENCE INC ,  LIN QIN ,  PULIGADDA RAMA ,  CLAYPOOL JAMES ,  GUERRERO DOUGLAS J ,  SMITH BRIAN

    Inventor： LIN QIN ,  PULIGADDA RAMA ,  CLAYPOOL JAMES ,  GUERRERO DOUGLAS J ,  SMITH BRIAN

    IPC: H01L21/027 ,  G03F7/20

    CPC classification number: H01L21/0337 ,  C08G77/20 ,  G03F7/40 ,  H01L21/0338 ,  H01L21/3121

    Abstract: Novel double- and triple-patterning methods are provided. The methods involve applying a shrinkable composition to a patterned template structure (e.g., a structure having lines) and heating the composition. The shrinkable composition is selected to possess properties that will cause it to shrink during heating, thus forming a conformal layer over the patterned template structure. The layer is then etched to leave behind pre-spacer structures, which comprise the features from the pattern with remnants of the shrinkable composition adjacent the feature sidewalls. The features are removed, leaving behind a doubled pattern. In an alternative embodiment, an extra etch step can be carried out prior to formation of the features on the template structure, thus allowing the pattern to be tripled rather than doubled.

    Abstract translation: 提供了新的双重和三重图案化方法。 所述方法包括将可收缩的组合物应用于图案化的模板结构（例如，具有线的结构）并加热组合物。 可收缩组合物被选择为具有使其在加热期间收缩的性质，从而在图案化模板结构上形成共形层。 然后蚀刻该层以留下预间隔结构，其包含来自图案的特征，其中可收缩组合物的残余物邻近特征侧壁。 功能被删除，留下了一倍的模式。 在替代实施例中，可以在模板结构上形成特征之前执行额外蚀刻步骤，从而允许图案增加三倍而不是加倍。

    SPIN-ON CARBON COMPOSITIONS FOR LITHOGRAPHIC PROCESSING
    6.
    发明公开
    SPIN-ON CARBON COMPOSITIONS FOR LITHOGRAPHIC PROCESSING 审中-公开
    安格鲁布·柯林顿·弗朗西斯·马萨诸塞

    公开(公告)号：EP2766920A4

    公开(公告)日：2015-05-27

    申请号：EP12840652

    申请日：2012-10-10

    Applicant: BREWER SCIENCE INC

    Inventor： KRISHNAMURTHY VANDANA ,  SULLIVAN DANIEL M ,  WANG YUBAO ,  LIN QIN ,  SIMMONS SEAN

    IPC: H01L21/20 ,  H01L21/027 ,  H01L21/205

    CPC classification number: B32B33/00 ,  B32B9/04 ,  B32B2255/26 ,  B32B2307/70 ,  B32B2379/08 ,  C08G73/00 ,  C08G73/1067 ,  C08G73/1075 ,  C08G73/1078 ,  C09D179/08 ,  G03F7/094 ,  H01L21/0332 ,  H01L21/3081 ,  Y10T428/24802 ,  Y10T428/24851 ,  Y10T428/30 ,  Y10T428/31623 ,  Y10T428/31667 ,  Y10T428/31681 ,  Y10T428/31721

    Abstract: The invention described herein is directed towards spin-on carbon materials comprising polyamic acid compositions and a crosslinker in a solvent system. The materials are useful in trilayer photolithography processes. Films made with the inventive compositions are not soluble in solvents commonly used in lithographic materials, such as, but not limited to PGME, PGMEA, and cyclohexanone. However, the films can be dissolved in developers commonly used in photolithography. In one embodiment, the films can be heated at high temperatures to improve the thermal stability for high temperature processing. Regardless of the embodiment, the material can be applied to a flat/planar or patterned surface. Advantageously, the material exhibits a wiggling resistance during pattern transfer to silicon substrate using fluorocarbon etch.

    Abstract translation: 本文描述的本发明涉及在溶剂体系中包含聚酰胺酸组合物和交联剂的旋涂碳材料。 这些材料在三层光刻工艺中是有用的。 用本发明组合物制成的薄膜不溶于通常用于平版印刷材料的溶剂中，例如但不限于PGME，PGMEA和环己酮。 然而，这些膜可以溶解在通常用于光刻中的显影剂中。 在一个实施方案中，可以在高温下加热膜以改善用于高温处理的热稳定性。 不管实施例如何，材料可以应用于平面/平面或图案化的表面。 有利的是，使用碳氟化合物蚀刻在材料图案转移到硅衬底期间材料表现出摆动阻力。

    SPIN-ON SPACER MATERIALS FOR DOUBLE- AND TRIPLE-PATTERNING LITHOGRAPHY
    7.
    发明公开
    SPIN-ON SPACER MATERIALS FOR DOUBLE- AND TRIPLE-PATTERNING LITHOGRAPHY 审中-公开
    SPIN-ON中间层的材料与双重和三重结构性光刻

    公开(公告)号：EP2374145A4

    公开(公告)日：2012-11-07

    申请号：EP10729436

    申请日：2010-01-06

    Applicant: BREWER SCIENCE INC

    Inventor： LIN QIN ,  PULIGADDA RAMA ,  CLAYPOOL JAMES ,  GUERRERO DOUGLAS J ,  SMITH BRIAN

    IPC: H01L21/027 ,  G03F7/20 ,  G03F7/40

    CPC classification number: H01L21/0337 ,  C08G77/20 ,  G03F7/40 ,  H01L21/0338 ,  H01L21/3121

    Abstract: Novel double- and triple-patterning methods are provided. The methods involve applying a shrinkable composition to a patterned template structure (e.g., a structure having lines) and heating the composition. The shrinkable composition is selected to possess properties that will cause it to shrink during heating, thus forming a conformal layer over the patterned template structure. The layer is then etched to leave behind pre-spacer structures, which comprise the features from the pattern with remnants of the shrinkable composition adjacent the feature sidewalls. The features are removed, leaving behind a doubled pattern. In an alternative embodiment, an extra etch step can be carried out prior to formation of the features on the template structure, thus allowing the pattern to be tripled rather than doubled.

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