公开(公告)号：SG10201607603VA

公开(公告)日：2016-11-29

申请号：SG10201607603V

申请日：2012-10-10

Applicant: BREWER SCIENCE INC

Inventor： KRISHNAMURTHY VANDANA ,  SULLIVAN DANIEL M ,  WANG YUBAO ,  LIN QIN ,  SIMMONS SEAN

公开(公告)号：SG11201404229YA

公开(公告)日：2014-08-28

申请号：SG11201404229Y

申请日：2013-01-17

Applicant: BREWER SCIENCE INC

Inventor： SULLIVAN DANIEL M ,  STROUD CHARLYN ,  DAI JINHUA

IPC: H01L21/31 ,  H01L21/027

Abstract: Nonpolymeric compounds, compositions, and methods for forming microelectronic structures, and the structures formed therefrom are provided. The nonpolymeric compounds are ring-opened, epoxide-adamantane derivatives that comprise at least two epoxy moieties and at least one adamantyl group, along with at least one chemical modification group, such as a chromophore, bonded to a respective epoxy moiety. Anti-reflective and/or planarization compositions can be formed using these compounds and used in lithographic processes, including fabrication of microelectronic structures.

公开(公告)号：SG11201401430RA

公开(公告)日：2014-09-26

申请号：SG11201401430R

申请日：2012-10-10

Applicant: BREWER SCIENCE INC

Inventor： KRISHNAMURTHY VANDANA ,  SULLIVAN DANIEL M ,  WANG YUBAO ,  LIN QIN ,  SIMMONS SEAN

IPC: H01L21/20 ,  H01L21/027 ,  H01L21/205

公开(公告)号：WO2013006314A2

公开(公告)日：2013-01-10

申请号：PCT/US2012044248

申请日：2012-06-26

Applicant: BREWER SCIENCE INC ,  SULLIVAN DANIEL M ,  NEEF CHARLES J ,  WANG YUBAO ,  OUATTARA TANTIBORO

Inventor： SULLIVAN DANIEL M ,  NEEF CHARLES J ,  WANG YUBAO ,  OUATTARA TANTIBORO

CPC classification number: H01L21/0276 ,  C08G77/58 ,  C09D183/14 ,  G03F7/0752 ,  G03F7/09 ,  G03F7/091 ,  G03F7/094 ,  H01L21/0332 ,  Y10T428/24802

Abstract: Metal-oxide films for lithographic applications are provided. The films are formed from compositions comprising metal-oxide precursor compounds including metals and metalloids other than silicon. These films are easily produced and can be modified with a variety of ligands, including alkoxides, phenoxides, carboxylates, beta-diketones, and beta-ketoesters.

Abstract translation: 提供了用于光刻应用的金属氧化物膜。 该膜由包含金属和氧化物前体化合物的组合物形成，包括除硅以外的金属和准金属。 这些膜容易生产，并且可以用各种配体进行改性，包括醇盐，苯氧化物，羧酸盐，β-二酮和β-酮​​酯。

公开(公告)号：WO2009018217A3

公开(公告)日：2009-03-26

申请号：PCT/US2008071357

申请日：2008-07-28

Applicant: BREWER SCIENCE INC ,  SULLIVAN DANIEL M ,  HUANG RUNHUI ,  NEEF CHARLES J ,  DAI JINHUA ,  SWOPE MICHAEL B

Inventor： SULLIVAN DANIEL M ,  HUANG RUNHUI ,  NEEF CHARLES J ,  DAI JINHUA ,  SWOPE MICHAEL B

IPC: G03F7/11 ,  C08F212/04 ,  C08F220/10 ,  C08F236/06 ,  G03F7/16

CPC classification number: G03F7/091 ,  C08F212/14 ,  C08F220/14 ,  C08F220/18 ,  C08F220/26 ,  C08F220/34 ,  C08F220/56 ,  C08F226/06 ,  G03F7/11 ,  Y10T428/31678 ,  Y10T428/31855 ,  Y10T428/31935

Abstract: This invention describes compositions and methods of using non-covalently crosslinked resin coatings for lithographic applications. These materials are designed to undergo, after coating, a change that provides solvent resistance and, with some materials, simultaneous aqueous-base solubility. Non-covalent interactions allow for easier removal of these coatings than of covalcntly crosslinked materials. These types of materials are well-suited for trench and gap fill applications, as well as for anti-reflective coatings, spin-on carbon layers, and etch masks.

Abstract translation: 本发明描述了用于平版印刷应用的非共价交联树脂涂料的组合物和方法。 这些材料被设计成在涂覆之后经历改变，从而提供耐溶剂性，并且在某些材料的情况下同时具有水基溶解性。 与共价交联材料相比，非共价相互作用可以更容易地去除这些涂层。 这些类型的材料非常适合沟槽和间隙填充应用，以及抗反射涂层，旋涂碳层和蚀刻掩膜。

公开(公告)号：EP2729534A4

公开(公告)日：2015-02-25

申请号：EP12807860

申请日：2012-06-26

Applicant: BREWER SCIENCE INC

Inventor： SULLIVAN DANIEL M ,  NEEF CHARLES J ,  WANG YUBAO ,  OUATTARA TANTIBORO

IPC: C08L85/00 ,  C08J5/18 ,  C08L101/00 ,  G03F7/004 ,  H01L21/027

CPC classification number: H01L21/0276 ,  C08G77/58 ,  C09D183/14 ,  G03F7/0752 ,  G03F7/09 ,  G03F7/091 ,  G03F7/094 ,  H01L21/0332 ,  Y10T428/24802

Abstract: Metal-oxide films for lithographic applications are provided. The films are formed from compositions comprising metal-oxide precursor compounds including metals and metalloids other than silicon. These films are easily produced and can be modified with a variety of ligands, including alkoxides, phenoxides, carboxylates, beta-diketones, and beta-ketoesters.

公开(公告)号：EP2805347A4

公开(公告)日：2015-07-22

申请号：EP13738476

申请日：2013-01-17

Applicant: BREWER SCIENCE INC

Inventor： SULLIVAN DANIEL M ,  STROUD CHARLYN ,  DAI JINHUA

IPC: G03F7/09 ,  C07C69/76 ,  C07D303/23

CPC classification number: C09D5/006 ,  C07C69/76 ,  C07C69/94 ,  C07C2603/24 ,  C07C2603/74 ,  C07D303/23 ,  G03F7/091 ,  G03F7/094 ,  G03F7/30 ,  G03F7/40 ,  H01L21/0276 ,  Y10T428/265 ,  Y10T428/31511 ,  Y10T428/31525 ,  Y10T428/31529

Abstract: Nonpolymeric compounds, compositions, and methods for forming microelectronic structures, and the structures formed therefrom are provided. The nonpolymeric compounds are ring-opened, epoxide-adamantane derivatives that comprise at least two epoxy moieties and at least one adamantyl group, along with at least one chemical modification group, such as a chromophore, bonded to a respective epoxy moiety. Anti-reflective and/or planarization compositions can be formed using these compounds and used in lithographic processes, including fabrication of microelectronic structures.

公开(公告)号：EP2766920A4

公开(公告)日：2015-05-27

申请号：EP12840652

申请日：2012-10-10

Applicant: BREWER SCIENCE INC

Inventor： KRISHNAMURTHY VANDANA ,  SULLIVAN DANIEL M ,  WANG YUBAO ,  LIN QIN ,  SIMMONS SEAN

IPC: H01L21/20 ,  H01L21/027 ,  H01L21/205

CPC classification number: B32B33/00 ,  B32B9/04 ,  B32B2255/26 ,  B32B2307/70 ,  B32B2379/08 ,  C08G73/00 ,  C08G73/1067 ,  C08G73/1075 ,  C08G73/1078 ,  C09D179/08 ,  G03F7/094 ,  H01L21/0332 ,  H01L21/3081 ,  Y10T428/24802 ,  Y10T428/24851 ,  Y10T428/30 ,  Y10T428/31623 ,  Y10T428/31667 ,  Y10T428/31681 ,  Y10T428/31721

Abstract: The invention described herein is directed towards spin-on carbon materials comprising polyamic acid compositions and a crosslinker in a solvent system. The materials are useful in trilayer photolithography processes. Films made with the inventive compositions are not soluble in solvents commonly used in lithographic materials, such as, but not limited to PGME, PGMEA, and cyclohexanone. However, the films can be dissolved in developers commonly used in photolithography. In one embodiment, the films can be heated at high temperatures to improve the thermal stability for high temperature processing. Regardless of the embodiment, the material can be applied to a flat/planar or patterned surface. Advantageously, the material exhibits a wiggling resistance during pattern transfer to silicon substrate using fluorocarbon etch.

Abstract translation: 本文描述的本发明涉及在溶剂体系中包含聚酰胺酸组合物和交联剂的旋涂碳材料。 这些材料在三层光刻工艺中是有用的。 用本发明组合物制成的薄膜不溶于通常用于平版印刷材料的溶剂中，例如但不限于PGME，PGMEA和环己酮。 然而，这些膜可以溶解在通常用于光刻中的显影剂中。 在一个实施方案中，可以在高温下加热膜以改善用于高温处理的热稳定性。 不管实施例如何，材料可以应用于平面/平面或图案化的表面。 有利的是，使用碳氟化合物蚀刻在材料图案转移到硅衬底期间材料表现出摆动阻力。

公开(公告)号：EP2174189A4

公开(公告)日：2011-01-19

申请号：EP08796726

申请日：2008-07-28

Applicant: BREWER SCIENCE INC

Inventor： SULLIVAN DANIEL M ,  HUANG RUNHUI ,  NEEF CHARLES J ,  DAI JINHUA ,  SWOPE MICHAEL B

IPC: G03F7/11 ,  C08F212/04 ,  C08F220/10 ,  C08F236/06 ,  G03F7/16

CPC classification number: G03F7/091 ,  C08F212/14 ,  C08F220/14 ,  C08F220/18 ,  C08F220/26 ,  C08F220/34 ,  C08F220/56 ,  C08F226/06 ,  G03F7/11 ,  Y10T428/31678 ,  Y10T428/31855 ,  Y10T428/31935

Abstract: This invention describes compositions and methods of using non-covalently crosslinked resin coatings for lithographic applications. These materials are designed to undergo, after coating, a change that provides solvent resistance and, with some materials, simultaneous aqueous-base solubility. Non-covalent interactions allow for easier removal of these coatings than of covalently crosslinked materials. These types of materials are well-suited for trench and gap fill applications, as well as for anti-reflective coatings, spin-on carbon layers, and etch masks.