Abstract:
Provided is a dust removing device (470) and an imaging device using the dust removing device (470). In a dust removing device (470) to be set on a base (501), including a piezoelectric element (430) formed of a piezoelectric material (431) and a pair of opposing electrodes (432, 433), a vibration member, and a fixation member containing at least a high molecular compound component, a phase transition temperature T from a first ferroelectric crystal phase to a second ferroelectric crystal phase of the piezoelectric material (431) is set to -60°C
Abstract:
Provided are a barium titanate-based piezoelectric ceramics having satisfactory piezoelectric performance and a satisfactory mechanical quality factor (Qm), and a piezoelectric element using the same. Specifically provided are a piezoelectric ceramics, including: crystal particles; and a grain boundary between the crystal particles, in which the crystal particles each include barium titanate having a perovskite-type structure and manganese at 0.04% by mass or more and 0.20% by mass or less in terms of a metal with respect to the barium titanate, and the grain boundary includes at least one compound selected from the group consisting of Ba4Ti12O27 and Ba6Ti17O40, and a piezoelectric element using the same.
Abstract translation:提供一种具有令人满意的压电性能和令人满意的机械品质因数(Qm)的钛酸钡基压电陶瓷,以及使用它的压电元件。 具体提供的是压电陶瓷,包括:晶体颗粒; 晶体粒子各自包含钛酸钙,钛酸钙,钛,钛,钛,钛,钛,钛,钛,钛, 钛酸盐,并且晶界包括至少一种选自Ba 4 Ti 12 O 27和Ba 6 Ti 17 O 40的化合物和使用其的压电元件。
Abstract:
Provided is a lead-free piezoelectric ceramics having enhanced mechanical quality factor (Qm) and mechanical strength. The piezoelectric ceramics, includes at least a first crystal grain and a second crystal grain. The first crystal grain has an average equivalent circle diameter of 2 μm or more and 30 μm or less. The first crystal grain includes a perovskite-type metal oxide represented by the following general formula (1) as a main component, and the second crystal grain includes a perovskite-type metal oxide represented by the following general formula (2) as a main component: (1) xBaTiO3-yCaTiO3-zCaZrO3; and (2) x'BaTiO3-y'CaTiO3-z'CaZrO3, provided that x, y, z, x', y', and z' satisfy x+y+z=1, x'+y'+z'=1, 0≤x'≤0.15, 0.85≤y'≤1, 0≤z'≤0.05, x>x', 0 0.
Abstract translation:提供了具有增强的机械品质因数(Qm)和机械强度的无铅压电陶瓷。 压电陶瓷至少包括第一晶粒和第二晶粒。 第一晶粒的平均当量圆直径为2μm以上且30μm以下。 第一晶粒含有下述通式(1)所示的钙钛矿型金属氧化物作为主成分,第二晶粒含有下述通式(2)所示的钙钛矿型金属氧化物作为主成分 :(1)xBaTiO3-yCaTiO3-zCaZrO3; 和(2)x'BaTiO3-y'CaTiO3-z'CaZrO3,条件是x,y,z,x',y'和z'满足x + y + z = 1,x'+ y'+ z' =1,0≤x'≤0.15,0.85≤y'≤1,0≤z'≤0.05,x> x',0 0。
Abstract:
Provided is a lead-free piezoelectric ceramics having enhanced mechanical quality factor (Qm) and mechanical strength. The piezoelectric ceramics, includes at least a first crystal grain and a second crystal grain. The first crystal grain has an average equivalent circle diameter of 2 μm or more and 30 μm or less. The first crystal grain includes a perovskite-type metal oxide represented by the following general formula (1) as a main component, and the second crystal grain includes a perovskite-type metal oxide represented by the following general formula (2) as a main component: (1) xBaTiO3-yCaTiO3-zCaZrO3; and (2) x'BaTiO3-y'CaTiO3-z'CaZrO3, provided that x, y, z, x', y', and z' satisfy x+y+z=1, x'+y'+z'=1, 0≤x'≤0.15, 0.85≤y'≤1, 0≤z'≤0.05, x>x', 0 0.
Abstract translation:提供了具有增强的机械品质因数(Qm)和机械强度的无铅压电陶瓷。 压电陶瓷至少包括第一晶粒和第二晶粒。 第一晶粒的平均当量圆直径为2μm以上且30μm以下。 第一晶粒包括由以下通式(1)表示的钙钛矿型金属氧化物作为主要成分,第二晶粒包括由以下通式(2)表示的钙钛矿型金属氧化物作为主要成分 :(1)xBaTiO3-yCaTiO3-zCaZrO3; 和(2)x'BaTiO3-y'CaTiO3-z'CaZrO3,条件是x,y,z,x',y'和z'满足x + y + z = 1,x'+ y'+ z' =1,0≤x'≤0.15,0.85≤y'≤1,0≤z'≤0.05,x> x',0 0。
Abstract:
Provided is a piezoelectric material having high Curie temperature, high insulation property, and high piezoelectric performance, the piezoelectric material including a perovskite-type metal oxide represented by the general formula (1): xBaTiO3-yBiFeO3-zBi(M0.5Ti0.5)O3, where M represents at least one kind of element selected from the group consisting of Mg, Ni, and Zn, x represents a value satisfying 0.25
Abstract translation:提供具有高居里温度,高绝缘性和高压电性能的压电材料,压电材料包括由通式(1)表示的钙钛矿型金属氧化物:xBaTiO3-yBiFeO3-zBi(M0.5Ti0.5) O 3,其中M表示选自Mg,Ni和Zn中的至少一种元素,x表示满足0.25 <= x <= 0.75的值,y表示满足0.15 <= y <0.73的值, 并且z表示满足0.02 <= z <= 0.60的值,条件是其中钙钛矿型金属氧化物含有V的x + y + z = 1,V的含量为0.0005摩尔以上且0.0050摩尔, 相对于1摩尔钙钛矿型金属氧化物较小。 此外,提供了使用压电材料的压电元件,排液头,超声波马达和除尘装置。
Abstract:
Provided is a dust removing device (470) and an imaging device using the dust removing device (470). In a dust removing device (470) to be set on a base (501), including a piezoelectric element (430) formed of a piezoelectric material (431) and a pair of opposing electrodes (432, 433), a vibration member, and a fixation member containing at least a high molecular compound component, a phase transition temperature T from a first ferroelectric crystal phase to a second ferroelectric crystal phase of the piezoelectric material (431) is set to -60°C
Abstract translation:提供了除尘装置(470)和使用除尘装置(470)的成像装置。 在设置在基体(501)上的除尘装置(470)中,包括由压电材料(431)和一对相对电极(432,483)形成的压电元件(430),振动部件 含有至少高分子化合物成分的固定构件,从压电材料(431)的第一铁电晶体相到第二铁电晶体相的相变温度T被设定为-60℃<= T <= -5 ℃,从而可以适当地设计和控制除尘装置(470),即使在低温下也可以获得高的除尘性能。
Abstract:
Provided are a piezoelectric thin film having good piezoelectricity in which a rhombohedral structure and a tetragonal structure are mixed, and a piezoelectric element using the piezoelectric thin film. The piezoelectric thin film includes a perovskite type metal oxide, in which the perovskite type metal oxide is a mixed crystal system of at least a rhombohedral structure and a tetragonal structure, and a ratio between an a-axis lattice parameter and a c-axis lattice parameter of the tetragonal structure satisfies 1.15=c/a=1.30. The piezoelectric element includes on a substrate: the above-mentioned piezoelectric thin film; and a pair of electrodes provided in contact with the piezoelectric thin film.
Abstract translation:提供一种压电薄膜,其具有混合菱方结构和四边形结构的压电性,以及使用压电薄膜的压电元件。 压电薄膜包括钙钛矿型金属氧化物,其中钙钛矿型金属氧化物是至少具有菱方结构和四方结构的混晶系,以及a轴晶格参数与c轴晶格之比 四方结构的参数满足1.15 = c / a = 1.30。 压电元件包括在基板上:上述压电薄膜; 以及设置成与压电薄膜接触的一对电极。
Abstract:
Provided are a piezoelectric thin film having good piezoelectricity in which a rhombohedral structure and a tetragonal structure are mixed, and a piezoelectric element using the piezoelectric thin film. The piezoelectric thin film includes a perovskite type metal oxide, in which the perovskite type metal oxide is a mixed crystal system of at least a rhombohedral structure and a tetragonal structure, and a ratio between an a-axis lattice parameter and a c-axis lattice parameter of the tetragonal structure satisfies 1.15=c/a=1.30. The piezoelectric element includes on a substrate: the above-mentioned piezoelectric thin film; and a pair of electrodes provided in contact with the piezoelectric thin film.
Abstract translation:提供一种压电薄膜,其具有混合菱方结构和四边形结构的压电性,以及使用压电薄膜的压电元件。 压电薄膜包括钙钛矿型金属氧化物,其中钙钛矿型金属氧化物是至少具有菱方结构和四方结构的混晶系,以及a轴晶格参数与c轴晶格之比 四方结构的参数满足1.15 = c / a = 1.30。 压电元件包括在基板上:上述压电薄膜; 以及设置成与压电薄膜接触的一对电极。
Abstract:
In a piezoelectric element having a piezoelectric film sandwiched between a lower electrode and an upper electrode, the lower electrode and/or the upper electrode and the piezoelectric film comprise perovskite oxide and a contact interface between the lower electrode and/or the upper electrode and the piezoelectric film does not exist and a region where crystals of the lower electrode and/or the upper electrode and crystals of the piezoelectric film are mixed exists between the lower electrode and/or the upper electrode and the piezoelectric film.
Abstract:
There are disclosed a piezoelectric thin film having less non-uniform portions and holding satisfactory piezoelectric characteristics, a method of manufacturing the film, a piezoelectric element using the piezoelectric thin film, and an ink jet system recording head using the piezoelectric element. In the piezoelectric thin film of perovskite crystals formed on a substrate by a sol-gel process and represented by a general formula Pb(1-x)Lax(ZryTi1-y)O3 (where 0≦̸x