Abstract:
Provided are a barium titanate-based piezoelectric ceramics having satisfactory piezoelectric performance and a satisfactory mechanical quality factor (Qm), and a piezoelectric element using the same. Specifically provided are a piezoelectric ceramics, including: crystal particles; and a grain boundary between the crystal particles, in which the crystal particles each include barium titanate having a perovskite-type structure and manganese at 0.04% by mass or more and 0.20% by mass or less in terms of a metal with respect to the barium titanate, and the grain boundary includes at least one compound selected from the group consisting of Ba4Ti12O27 and Ba6Ti17O40, and a piezoelectric element using the same.
Abstract translation:提供一种具有令人满意的压电性能和令人满意的机械品质因数(Qm)的钛酸钡基压电陶瓷,以及使用它的压电元件。 具体提供的是压电陶瓷,包括:晶体颗粒; 晶体粒子各自包含钛酸钙,钛酸钙,钛,钛,钛,钛,钛,钛,钛,钛, 钛酸盐,并且晶界包括至少一种选自Ba 4 Ti 12 O 27和Ba 6 Ti 17 O 40的化合物和使用其的压电元件。
Abstract:
Provided is a lead-free piezoelectric ceramics having enhanced mechanical quality factor (Qm) and mechanical strength. The piezoelectric ceramics, includes at least a first crystal grain and a second crystal grain. The first crystal grain has an average equivalent circle diameter of 2 μm or more and 30 μm or less. The first crystal grain includes a perovskite-type metal oxide represented by the following general formula (1) as a main component, and the second crystal grain includes a perovskite-type metal oxide represented by the following general formula (2) as a main component: (1) xBaTiO3-yCaTiO3-zCaZrO3; and (2) x'BaTiO3-y'CaTiO3-z'CaZrO3, provided that x, y, z, x', y', and z' satisfy x+y+z=1, x'+y'+z'=1, 0≤x'≤0.15, 0.85≤y'≤1, 0≤z'≤0.05, x>x', 0 0.
Abstract translation:提供了具有增强的机械品质因数(Qm)和机械强度的无铅压电陶瓷。 压电陶瓷至少包括第一晶粒和第二晶粒。 第一晶粒的平均当量圆直径为2μm以上且30μm以下。 第一晶粒含有下述通式(1)所示的钙钛矿型金属氧化物作为主成分,第二晶粒含有下述通式(2)所示的钙钛矿型金属氧化物作为主成分 :(1)xBaTiO3-yCaTiO3-zCaZrO3; 和(2)x'BaTiO3-y'CaTiO3-z'CaZrO3,条件是x,y,z,x',y'和z'满足x + y + z = 1,x'+ y'+ z' =1,0≤x'≤0.15,0.85≤y'≤1,0≤z'≤0.05,x> x',0 0。
Abstract:
Provided is a lead-free piezoelectric ceramics having enhanced mechanical quality factor (Qm) and mechanical strength. The piezoelectric ceramics, includes at least a first crystal grain and a second crystal grain. The first crystal grain has an average equivalent circle diameter of 2 μm or more and 30 μm or less. The first crystal grain includes a perovskite-type metal oxide represented by the following general formula (1) as a main component, and the second crystal grain includes a perovskite-type metal oxide represented by the following general formula (2) as a main component: (1) xBaTiO3-yCaTiO3-zCaZrO3; and (2) x'BaTiO3-y'CaTiO3-z'CaZrO3, provided that x, y, z, x', y', and z' satisfy x+y+z=1, x'+y'+z'=1, 0≤x'≤0.15, 0.85≤y'≤1, 0≤z'≤0.05, x>x', 0 0.
Abstract translation:提供了具有增强的机械品质因数(Qm)和机械强度的无铅压电陶瓷。 压电陶瓷至少包括第一晶粒和第二晶粒。 第一晶粒的平均当量圆直径为2μm以上且30μm以下。 第一晶粒包括由以下通式(1)表示的钙钛矿型金属氧化物作为主要成分,第二晶粒包括由以下通式(2)表示的钙钛矿型金属氧化物作为主要成分 :(1)xBaTiO3-yCaTiO3-zCaZrO3; 和(2)x'BaTiO3-y'CaTiO3-z'CaZrO3,条件是x,y,z,x',y'和z'满足x + y + z = 1,x'+ y'+ z' =1,0≤x'≤0.15,0.85≤y'≤1,0≤z'≤0.05,x> x',0 0。
Abstract:
Provided are a piezoelectric thin film having good piezoelectricity in which a rhombohedral structure and a tetragonal structure are mixed, and a piezoelectric element using the piezoelectric thin film. The piezoelectric thin film includes a perovskite type metal oxide, in which the perovskite type metal oxide is a mixed crystal system of at least a rhombohedral structure and a tetragonal structure, and a ratio between an a-axis lattice parameter and a c-axis lattice parameter of the tetragonal structure satisfies 1.15=c/a=1.30. The piezoelectric element includes on a substrate: the above-mentioned piezoelectric thin film; and a pair of electrodes provided in contact with the piezoelectric thin film.
Abstract translation:提供一种压电薄膜,其具有混合菱方结构和四边形结构的压电性,以及使用压电薄膜的压电元件。 压电薄膜包括钙钛矿型金属氧化物,其中钙钛矿型金属氧化物是至少具有菱方结构和四方结构的混晶系,以及a轴晶格参数与c轴晶格之比 四方结构的参数满足1.15 = c / a = 1.30。 压电元件包括在基板上:上述压电薄膜; 以及设置成与压电薄膜接触的一对电极。
Abstract:
Provided are a piezoelectric thin film having good piezoelectricity in which a rhombohedral structure and a tetragonal structure are mixed, and a piezoelectric element using the piezoelectric thin film. The piezoelectric thin film includes a perovskite type metal oxide, in which the perovskite type metal oxide is a mixed crystal system of at least a rhombohedral structure and a tetragonal structure, and a ratio between an a-axis lattice parameter and a c-axis lattice parameter of the tetragonal structure satisfies 1.15=c/a=1.30. The piezoelectric element includes on a substrate: the above-mentioned piezoelectric thin film; and a pair of electrodes provided in contact with the piezoelectric thin film.
Abstract translation:提供一种压电薄膜,其具有混合菱方结构和四边形结构的压电性,以及使用压电薄膜的压电元件。 压电薄膜包括钙钛矿型金属氧化物,其中钙钛矿型金属氧化物是至少具有菱方结构和四方结构的混晶系,以及a轴晶格参数与c轴晶格之比 四方结构的参数满足1.15 = c / a = 1.30。 压电元件包括在基板上:上述压电薄膜; 以及设置成与压电薄膜接触的一对电极。
Abstract:
Provided is an electroconductive member configured to suppress a void image caused by abnormal discharge and a horizontal streak-like image caused by downstream discharge without depending on the thickness of a photosensitive layer of a photosensitive drum over a long period of time. The electroconductive member for electrophotography comprises at least an electroconductive support and a surface layer formed on an outer side of the electroconductive support. The surface layer includes a porous body and satisfies the predetermined (1), (2), and (3).
Abstract:
A method of producing a material capable of electrochemically storing and releasing a large amount of lithium ions is provided. The material is used as an electrode material for a negative electrode, and includes silicon or tin primary particles composed of crystal particles each having a specific diameter and an amorphous surface layer formed of at least a metal oxide, having a specific thickness. Gibbs free energy when the metal oxide is produced by oxidation of a metal is smaller than Gibbs free energy when silicon or tin is oxidized, and the metal oxide has higher thermodynamic stability than silicon oxide or tin oxide. The method of producing the electrode material includes reacting silicon or tin with a metal oxide, reacting a silicon oxide or a tin oxide with a metal, or reacting a silicon compound or a tin compound with a metal compound to react with each other.