公开(公告)号：EP1721865A3

公开(公告)日：2011-09-28

申请号：EP06075963.6

申请日：2006-04-28

Applicant: Delphi Technologies, Inc.

Inventor： Rich, David B. ,  Crist, Steven M.

IPC: B81C1/00 ,  G01P15/12

CPC classification number: B81C1/00142 ,  B81B2201/0235 ,  B81B2201/032 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81C2201/016 ,  G01P15/0802 ,  G01P15/123 ,  G01P2015/0828

Abstract: A technique for manufacturing a piezoresistive sensing structure (170) includes a number of process steps. Initially, a piezoresistive element (108) is implanted into a first side of an assembly (102,106,104A) that includes a semiconductor material (102,104A). A passivation layer (110A) is then formed on the first side of the assembly (102,106,104A) over the element (108). The passivation layer (110A) is then removed from selected areas on the first side of the assembly (102,106,104A). A first mask is then provided on the passivation layer (110A) in a desired pattern. A beam (152), which includes the element (108), is then formed in the assembly over at least a portion of the assembly (102,106,104A) that is to provide a cavity (103). The passivation layer (110A) provides a second mask, in the formation of the beam (152), that determines a width of the formed beam (152).

公开(公告)号：EP1690748B1

公开(公告)日：2008-06-11

申请号：EP06075231.8

申请日：2006-02-02

Applicant: Delphi Technologies, Inc.

Inventor： Schubert, Peter J. ,  Cluff, Charles A. ,  Brogoitti, James H. ,  Manlove, Gregory J. ,  Robertson, John W. ,  Rich, David B.

IPC: B60R21/01

CPC classification number: B60R21/01336 ,  B60R16/0233 ,  B60R21/0133 ,  B60R21/0134 ,  B60R2021/0018 ,  B60R2021/01322 ,  B60R2021/01325

公开(公告)号：EP1524511A2

公开(公告)日：2005-04-20

申请号：EP04077771.6

申请日：2004-10-06

Applicant: Delphi Technologies, Inc.

Inventor： Christenson, John C. ,  Rich, David B.

IPC: G01M3/18 ,  G01M3/22 ,  G01M3/40

CPC classification number: G01M3/40 ,  G01M3/186 ,  G01M3/226

Abstract: The present invention involves an electrical verification method that detects moisture within the cavity of the semiconductor or micro-machined device. The method affects an increase in the time for sufficient water vapor to remain within an unsealed device, so that instability in the diode can be measurable over a longer period of time. The method begins with the step of forming at least one reservoir (30) on at least one of the device wafer (11) and the capping wafer (12). The at least one reservoir (30) connects to at least one diffusion channel (31), which is in communication with at least one reservoir port (32). The method further includes the steps of forming a PN junction diode (40) adjacent to the at least one reservoir port (32); bonding the device wafer (11) with the capping wafer (12) to form a cavity (16); and electrically testing the PN junction diode (40) as an indication of the presence of moisture within the cavity (16). The device assembly (10) of the present invention includes a capping wafer (12) bonded on a device wafer (11) to form a cavity (16); at least one reservoir (30) including at least one diffusion channel (31) for receiving a liquid and retaining moisture. The at least one diffusion channel communicates with at least one reservoir port (32), which is open into the cavity (16). An exposed PN junction diode (40) is provided adjacent to the at least one reservoir port (32), and a pair of metal pads (48,49) is connected to the exposed PN junction diode (40).

Abstract translation: 本发明涉及检测半导体或微加工装置的空腔内的水分的电验证方法。 该方法影响足够的水蒸汽保持在未密封装置内的时间的增加，使得二极管中的不稳定性可以在更长的时间内测量。 该方法开始于在至少一个器件晶片（11）和封盖晶片（12）上形成至少一个储存器（30）的步骤。 所述至少一个贮存器（30）连接至至少一个扩散通道（31），其与至少一个储存器端口（32）连通。 该方法还包括形成邻近至少一个储存器端口（32）的PN结二极管（40）的步骤; 将所述器件晶片（11）与所述封盖晶片（12）接合以形成空腔（16）; 以及电气测试所述PN结二极管（40），作为在所述空腔（16）内存在水分的指示。 本发明的装置组件（10）包括结合在装置晶片（11）上以形成空腔（16）的封盖晶片（12）; 至少一个储存器（30），其包括用于接收液体并保持水分的至少一个扩散通道（31）。 至少一个扩散通道与至少一个开口进入空腔（16）的储存口（32）连通。 暴露的PN结二极管（40）邻近所述至少一个储存器端口（32）设置，并且一对金属焊盘（48,49）连接到所述暴露的PN结二极管（40）。

公开(公告)号：EP1721865B1

公开(公告)日：2012-12-26

申请号：EP06075963.6

申请日：2006-04-28

Applicant: Delphi Technologies, Inc.

Inventor： Rich, David B. ,  Crist, Steven M.

IPC: B81C1/00 ,  G01P15/12

CPC classification number: B81C1/00142 ,  B81B2201/0235 ,  B81B2201/032 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81C2201/016 ,  G01P15/0802 ,  G01P15/123 ,  G01P2015/0828

公开(公告)号：EP1690748A1

公开(公告)日：2006-08-16

申请号：EP06075231.8

申请日：2006-02-02

Applicant: Delphi Technologies, Inc.

Inventor： Schubert, Peter J. ,  Cluff, Charles A. ,  Brogoitti, James H. ,  Manlove, Gregory J. ,  Robertson, John W. ,  Rich, David B.

IPC: B60R21/01

CPC classification number: B60R21/01336 ,  B60R16/0233 ,  B60R21/0133 ,  B60R21/0134 ,  B60R2021/0018 ,  B60R2021/01322 ,  B60R2021/01325

Abstract: Impending rollover events are detected based on differential z-axis (i.e., vertical) acceleration. Vertical or z-axis acceleration measured at laterally opposite sides of the vehicle (10) are filtered (34, 36) and differenced (72/88/92), and the differential acceleration is processed and compared to a calibrated threshold (78/90/96) to detect impending rollover. Separate algorithms (38, 40, 42) are employed to detect different categories of rollover events, and a sum of the z-axis acceleration measurements is used as a safing signal (44, 50).

Abstract translation: 基于差分的z轴（即，垂直）加速度检测到即将发生的翻转事件。 在车辆（10）的反弹后期相对侧测量的垂直或z轴的加速度进行滤波（34,36）和求差（72/88/92），并且差分加速度被处理并且相比于校准阈值（九十〇分之七十八 / 96）来检测即将发生侧翻。 单独的算法（38，40,42）被用于检测不同类别的翻转事件的，和z轴的加速度测量的总和被用作安全信号（44，50）。

公开(公告)号：EP1780522A1

公开(公告)日：2007-05-02

申请号：EP06076891.8

申请日：2006-10-18

Applicant: Delphi Technologies, Inc.

Inventor： Dewes, Brian E. ,  Castillo-Borelly, Pedro E. ,  Christenson, John C. ,  Rich, David B.

IPC: G01J5/12 ,  B81B3/00

CPC classification number: G01J5/12 ,  G01J5/0225

Abstract: An infrared (IR) sensor (200) includes a semiconductor material (210), a circular membrane (204) and a thermopile (206A). The semiconductor material (210) includes a cavity (205) surrounded by a frame (212). The circular membrane (204) is positioned over the cavity (205) and has a perimeter supported by the frame (212). The membrane (204) has a first surface for receiving thermal radiation and an oppositely-disposed second surface. The membrane (204) includes at least one infrared absorbing layer (550). The thermopile (206A) includes a plurality of serially connected thermocouples. Each of the thermocouples has dissimilar electrically-resistive materials that define measurement junctions (209), which are positioned on the membrane (204), and reference junctions (207), which are positioned on the frame (212).

Abstract translation: 红外（IR）传感器（200）包括半导体材料（210），圆形膜（204）和热电堆（206A）。 半导体材料（210）包括被框架（212）包围的空腔（205）。 圆形膜（204）定位在空腔（205）上方并且具有由框架（212）支撑的周边。 膜（204）具有用于接收热辐射的第一表面和相对布置的第二表面。 膜（204）包括至少一个红外线吸收层（550）。 热电堆206A包括多个串联连接的热电偶。 每个热电偶具有不同的电阻材料，其限定位于膜（204）上的测量接头（209）和位于框架（212）上的参考接头（207）。

公开(公告)号：EP1628138A2

公开(公告)日：2006-02-22

申请号：EP05076724.3

申请日：2005-07-27

Applicant: Delphi Technologies, Inc.

Inventor： Rich, David B.

IPC: G01P15/08 ,  G01P15/135 ,  G01P15/12

CPC classification number: G01P15/135 ,  G01P15/0802 ,  G01P15/123 ,  H01H1/0036 ,  H01H35/142 ,  H01H2001/0063 ,  Y10T29/49004

Abstract: A process for making an acceleration sensitive impact detector involves steps of fabricating a semiconductive seismic mass layer; fabricating a seimconductive substrate having a recess in a surface thereof; fixing the seismic layer to the surface of the substrate so that the seismic mass layer covers the recess; etching a portion of the seismic mass layer overlying the recess to form a seismic mass that is supported over the recess by a beam; printing an electrically conductive circuit on the seismic mass and on the substrate, the printed circuits allowing an electrostatic force to be applied between the seismic mass and the substrate which is adapted to force the seismic mass away from the bottom of the recess formed in the substrate; and fixing a cap over the seismic mass to define a sealed cavity enclosing the seismic mass between the recess and the cap. The process provides an improved impact detector that is reliable and may be fabricated at a lower cost as compared with conventional processes and designs.

Abstract translation: 一种用于制造在加速度敏感探测器冲击方法涉及一种制造半导体层的地震质量的步骤; 制造具有在其表面中具有凹部的基板seimconductive; 地震层固定到所述基板的表面上，从而没有振动质量层覆盖凹部; 蚀刻所述振动质量层，覆盖所述凹部以形成地震质量的一部分没有被支撑在由光束的凹槽; 导电电路上的地震质量和在基片上印刷，所述印刷电路允许对静电力到地震质量和基片的所有这是angepasst从凹部的在所述基板形成的底部强制振动质量远之间施加 ; 以及在地震质量固定帽，以限定密封空腔包围凹部和盖之间的振动质量。 提供改进的冲击检测器的做的过程是可靠的，并且与常规方法和设计相比可以以较低的成本来制造。

公开(公告)号：EP1524511B1

公开(公告)日：2012-10-17

申请号：EP04077771.6

申请日：2004-10-06

Applicant: Delphi Technologies, Inc.

Inventor： Christenson, John C. ,  Rich, David B.

IPC: G01M3/18 ,  G01M3/22 ,  G01M3/40

CPC classification number: G01M3/40 ,  G01M3/186 ,  G01M3/226

公开(公告)号：EP1524511A3

公开(公告)日：2011-08-03

申请号：EP04077771.6

申请日：2004-10-06

Applicant: Delphi Technologies, Inc.

Inventor： Christenson, John C. ,  Rich, David B.

IPC: G01M3/18 ,  G01M3/22 ,  G01M3/40

CPC classification number: G01M3/40 ,  G01M3/186 ,  G01M3/226

Abstract: The present invention involves an electrical verification method that detects moisture within the cavity of the semiconductor or micro-machined device. The method affects an increase in the time for sufficient water vapor to remain within an unsealed device, so that instability in the diode can be measurable over a longer period of time. The method begins with the step of forming at least one reservoir (30) on at least one of the device wafer (11) and the capping wafer (12). The at least one reservoir (30) connects to at least one diffusion channel (31), which is in communication with at least one reservoir port (32). The method further includes the steps of forming a PN junction diode (40) adjacent to the at least one reservoir port (32); bonding the device wafer (11) with the capping wafer (12) to form a cavity (16); and electrically testing the PN junction diode (40) as an indication of the presence of moisture within the cavity (16). The device assembly (10) of the present invention includes a capping wafer (12) bonded on a device wafer (11) to form a cavity (16); at least one reservoir (30) including at least one diffusion channel (31) for receiving a liquid and retaining moisture. The at least one diffusion channel communicates with at least one reservoir port (32), which is open into the cavity (16). An exposed PN junction diode (40) is provided adjacent to the at least one reservoir port (32), and a pair of metal pads (48,49) is connected to the exposed PN junction diode (40).

公开(公告)号：EP1721865A2

公开(公告)日：2006-11-15

申请号：EP06075963.6

申请日：2006-04-28

Applicant: Delphi Technologies, Inc.

Inventor： Rich, David B. ,  Crist, Steven M.

IPC: B81B3/00

CPC classification number: B81C1/00142 ,  B81B2201/0235 ,  B81B2201/032 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81C2201/016 ,  G01P15/0802 ,  G01P15/123 ,  G01P2015/0828

Abstract: A technique for manufacturing a piezoresistive sensing structure (170) includes a number of process steps. Initially, a piezoresistive element (108) is implanted into a first side of an assembly (102,106,104A) that includes a semiconductor material (102,104A). A passivation layer (110A) is then formed on the first side of the assembly (102,106,104A) over the element (108). The passivation layer (110A) is then removed from selected areas on the first side of the assembly (102,106,104A). A first mask is then provided on the passivation layer (110A) in a desired pattern. A beam (152), which includes the element (108), is then formed in the assembly over at least a portion of the assembly (102,106,104A) that is to provide a cavity (103). The passivation layer (110A) provides a second mask, in the formation of the beam (152), that determines a width of the formed beam (152).

Abstract translation: 制造压阻感测结构（170）的技术包括多个工艺步骤。 最初，将压阻元件（108）注入包括半导体材料（102,104A）的组件（102,106,104A）的第一侧。 然后在元件（108）上方的组件（102,106,104A）的第一侧上形成钝化层（110A）。 然后从组件（102,106,104A）的第一侧上的选定区域去除钝化层（110A）。 然后以期望的图案在钝化层（110A）上提供第一掩模。 然后，包括元件（108）的梁（152）在组件中形成在组件（102,106,104A）的至少一部分上，以提供空腔（103）。 钝化层（110A）在确定所形成的光束（152）的宽度的波束（152）的形成中提供第二掩模。