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    MAPPING-PROJECTION-TYPE ELECTRON BEAM APPARATUS FOR INSPECTING SAMPLE BY USING ELECTRONS REFLECTED FROM THE SAMPLE
    1.
    发明申请
    MAPPING-PROJECTION-TYPE ELECTRON BEAM APPARATUS FOR INSPECTING SAMPLE BY USING ELECTRONS REFLECTED FROM THE SAMPLE 审中-公开
    用于通过使用从样品反射的电子检查样品的映射型投影型电子束装置

    公开(公告)号：WO2004068529A3

    公开(公告)日：2004-12-09

    申请号：PCT/JP2004000711

    申请日：2004-01-27

    Applicant: EBARA CORP ,  TOSHIBA KK ,  WATANABE KENJI ,  MURAKAMI TAKESHI ,  HATAKEYAMA MASAHIRO ,  HIRABAYASHI YOSHINAO ,  SATAKE TOHRU ,  NOJI NOBUHARU ,  YAMAZAKI YUICHIRO ,  NAGAHAMA ICHIROTA

    Inventor： WATANABE KENJI ,  MURAKAMI TAKESHI ,  HATAKEYAMA MASAHIRO ,  HIRABAYASHI YOSHINAO ,  SATAKE TOHRU ,  NOJI NOBUHARU ,  YAMAZAKI YUICHIRO ,  NAGAHAMA ICHIROTA

    IPC: G01N23/225 ,  H01J37/32 ,  H01J37/244 ,  G01N23/203 ,  H01L21/66

    CPC classification number: H01J37/32211 ,  G01N23/225 ,  H01J37/32357 ,  H01J2237/2441 ,  H01J2237/2446

    Abstract: An apparatus capable of detecting defects of a pattern on a sample with high accuracy and reliability and at a high throughput, and a semiconductor manufacturing method using the same are provided. The electron beam apparatus is a mapping-projection-type electron beam apparatus for observing or evaluating a surface of the sample by irradiating the sample with a primary electron beam and forming on a detector an image of reflected electrons emitted from the sample. An electron impact-type detector such as an electron impact-type CCD or an electron impact-type TDI is used as the detector for detecting the reflected electrons. The reflected electrons are selectively detected from an energy difference between the reflected electrons and secondary electrons emitted from the sample. To eliminate charge-up caused on the sample surface by irradiation with the primary electron beam, the surface of the sample is covered with a cover placed above the sample and a gas is supplied to the space above the sample covered with the cover. The gas is brought into contact with the sample surface to reduce charge-up on the sample surface.

    Abstract translation: 提供了能够以高精度和可靠性以高产量检测样品上的图案的缺陷的装置，以及使用该缺陷的半导体制造方法。 电子束装置是用于通过用一次电子束照射样品来观察或评价样品的表面的映射投影型电子束装置，并在检测器上形成从样品发射的反射电子的图像。 作为检测反射电子的检测器，使用电子碰撞型CCD或电子碰撞型TDI等电子轰击型检测器。 从反射电子和从样品发射的二次电子之间的能量差选择性地检测反射电子。 为了通过照射一次电子束来消除样品表面上产生的电荷，样品的表面被放置在样品上方的盖子覆盖，并将气体供应到覆盖有覆盖物的样品上方。 气体与样品表面接触以减少样品表面的充电。

    4.
    发明专利
    未知

    公开(公告)号：DE69210337D1

    公开(公告)日：1996-06-05

    申请号：DE69210337

    申请日：1992-09-08

    Applicant: EBARA CORP

    Inventor： HATAKEYAMA MASAHIRO

    IPC: G21K1/00 ,  H01J27/08 ,  H05H3/02

    Abstract: A small-sized fast atom beam source which is capable of neutralizing ions at a high rate and of emitting a fast atom beam efficiently and with excellent directivity, wherein, a gas is introduced into the area between a plate-shaped cathode having multiplicity of atom emitting holes and a plate-shaped anode disposed to face opposite to the cathode to induce gas discharge by a DC high-voltage power supply, thereby forming a plasma, and ions that are produced by the plasma are accelerated toward the cathode and neutralized in and near the atom emitting holes, which have length larger than the diameter therof, thereby emitting a fast atom beam at a high rate of neutralizaion.

    7.
    发明专利
    未知

    公开(公告)号：DE69723127T2

    公开(公告)日：2004-04-22

    申请号：DE69723127

    申请日：1997-02-17

    Applicant: EBARA CORP

    Inventor： HATAKEYAMA MASAHIRO ,  ICHIKI KATSUNORI ,  TOMA YASUSHI ,  SAITOH MASAO

    IPC: G21K1/00 ,  B81B5/00 ,  G21K5/04 ,  H05H3/02

    Abstract: A fast atomic beam (FAB) source is capable of generating fast atomic beams having characteristics of a high beam density, a precise directionality, and a wide range of controlled out put energy levels. The FAB source is comprised of a discharge tube, an inductively coupled plasma generator for generating gas plasma in the discharge tube from introduced gas therein, positive and negative electrodes for accelerating ions to control the beam for a variety of energy levels. The negative electrode has a beam control opening for generating a FAB, wherein directionability, neutralization factor, and other FAB characteristics are controlled.

    8.
    发明专利
    未知

    公开(公告)号：DE69615721D1

    公开(公告)日：2001-11-15

    申请号：DE69615721

    申请日：1996-03-15

    Applicant: EBARA CORP ,  HATAMURA YOTARO

    Inventor： HATAKEYAMA MASAHIRO ,  ICHIKI KATSUNORI ,  KATO TAKAO ,  HATAMURA YOTARO ,  NAKAO MASAYUKI

    IPC: G03F1/00 ,  G03F1/20 ,  G03F7/00 ,  G03F7/20 ,  H01J9/02 ,  H01L21/033 ,  H01L21/308 ,  H01L21/266 ,  H01J37/30

    Abstract: A method and apparatus are presented for producing a three-dimensional ultra-fine micro-fabricated structures of the order of mu m and less for use in advanced optical communication systems and quantum effect devices. The basic components are an energy beam source, a mask member and a specimen stage. Because the mask member is an independent component, various combinations of relative movements of the mask member with respect to the beam axis and/or workpiece can be made with high precision to produce curved or slanted surfaces on a workpiece, thereby producing a multiple lines or array of convex or concave micro-lenses. Other examples of fine-structures include deposition of thin films on a multiple line pattern or in an array pattern. Because of the flexibility of fabrication method and material of fabrication, labyrinth seals having curved surface with grooved structure can be used as friction reduction means for bearing components. The fine groove dimensions of the order of nm is possible. Energy beams can be any of fast atomic beams, ion beams, electron beam, laser beams, radiation beams, X-ray beams and radical particle beams. Parallel beams are often used, but when a focused beam is used, a technique of reduced projection imaging can be utilized to produce a fine-structure of the order of nm.

    9.
    发明专利
    未知

    公开(公告)号：DE69417970D1

    公开(公告)日：1999-05-27

    申请号：DE69417970

    申请日：1994-08-18

    Applicant: EBARA CORP

    Inventor： HATAKEYAMA MASAHIRO

    IPC: H05H3/02

    Abstract: A fast atom beam source which is capable of efficiently emitting a fast atom beam with low energy and high particle flux. A plate-shaped electrode (21) has a multiplicity of atom emitting holes (7). A pair of electrodes (22 and 28) are disposed in series to face opposite to the plate-shaped electrode so as to form an electric discharge part. A power supply (24) applies an AC voltage between the pair of electrodes. A power supply (29) applies a DC voltage between the plate-shaped electrode and one of the pair of electrodes that is closer to the plate-shaped electrode. A gas inlet part (4) introduces a gas (5) to induce electric discharge in the space between the plate-shaped electrode and the pair of electrodes.

    10.
    发明专利
    未知

    公开(公告)号：DE69411882D1

    公开(公告)日：1998-08-27

    申请号：DE69411882

    申请日：1994-12-30

    Applicant: EBARA CORP

    Inventor： SAITO MUTSUMI ,  YAHIRO TOMOYUKI ,  HATAKEYAMA MASAHIRO

    IPC: G21K1/14 ,  H05H3/02

    Abstract: A beam charge exchanging apparatus for exchanging the charges of charged particles in a fast particle beam emitted from a source of the fast particle beam is disclosed. The apparatus comprises; a gas container for charge exchange placed in a vacuum atmosphere; holes provided in the container for passing the fast particle beam through the container; a source of gas; means for introducing the gas in the container as a high speed gas fluid; the fast particle beam is collided with the high speed gas fluid in the container for exchanging charges therebetween and turning the fast particle beam to a neutral particle beam. The apparatus further may include means for detecting the quantity of neutral particles resulting from the charge exchange by measuring the quantity of ionized gas generated in the high speed gas fluid as an electric current.

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