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    ELECTRON BEAM APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE COMPRISING THE APPARATUS
    2.
    发明申请
    ELECTRON BEAM APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE COMPRISING THE APPARATUS 审中-公开
    电子束装置及制造包含该装置的半导体装置的方法

    公开(公告)号：WO0237526A9

    公开(公告)日：2002-08-08

    申请号：PCT/JP0109629

    申请日：2001-11-02

    Applicant: EBARA CORP ,  NIPPON KOGAKU KK

    Inventor： NAKASUJI MAMORU ,  SATAKE TOHRU ,  WATANABE KENJI ,  MURAKAMI TAKESHI ,  NOJI NOBUHARU ,  SOBUKAWA HIROSI ,  KARIMATA TSUTOMU ,  YOSHIKAWA SHOJI ,  KIMBA TOSHIFUMI ,  OOWADA SHIN ,  SAITO MUTSUMI ,  HAMASHIMA MUNEKI ,  TAKAGI TORU ,  KIHARA NAOTO ,  NISHIMURA HIROSHI

    IPC: G01N23/225 ,  G01Q30/06 ,  H01J37/06 ,  H01J37/073 ,  H01J37/18 ,  H01J37/20 ,  H01J37/22 ,  H01J37/244 ,  H01J37/28 ,  H01J37/29 ,  H01L21/027 ,  H01L21/66

    CPC classification number: H01J37/185 ,  G01N23/225 ,  G01N23/2251 ,  H01J37/06 ,  H01J37/073 ,  H01J37/20 ,  H01J37/222 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/082 ,  H01J2237/202 ,  H01J2237/20228 ,  H01J2237/204 ,  H01J2237/22 ,  H01J2237/24564 ,  H01J2237/2806 ,  H01J2237/2816 ,  H01J2237/2817

    Abstract: An electron beam apparatus for evaluating a sample face which comprises a primary electro-optical system irradiating the sample with primary electron beams, a detection system, and a secondary electro-optical system directing the secondary electron beam generated from the sample face by irradiation with the primary electron beam to the detection system. The electron beam apparatus is characterized by comprising a multi-beam generator included in the primary electro-optical system to generate electrons emitted from an electron gun as primary electron beams, a scanning deflector included in the primary electro-optical system to scan the sample simultaneously with the primary electron beams, an objective lens included in common in the primary electro-optical system and the secondary electro-optical system to irradiate the sample with decelerated primary electron beams and to accelerate the secondary electron beams emitted from the irradiated point on the sample with the primary electron beams, a secondary electron beam separator included in the primary and secondary electro-optical systems to deflect the secondary electron beams passing through the objective lens from the primary electro-optical system to the secondary electro- optical system, a magnifying lens of at least one stage included in the secondary electro-optical lens to magnify the deflected secondary electron beams, and detectors included in the detection system and provided in accordance with the secondary electron beams for the secondary electro-optical system to detect secondary electron beams.

    Abstract translation: 一种电子束装置，用于评估样品面，该样品面包括用一次电子束照射样品的主电光系统，检测系统和二次电子光学系统，该样品面通过照射 一次电子束到检测系统。 电子束装置的特征在于包括：包含在主电光系统中的多束发生器，用于产生从电子枪发射的电子作为主电子束;包括在主电光系统中的扫描偏转器，用于同时扫描样品 利用一次电子束在主电子光学系统和二次电子光学系统中共同包括的物镜照射具有减速的一次电子束的样品并且加速从样品上的照射点发射的二次电子束 利用主电子束，包括在初级和次级电光系统中的次级电子束分离器，将通过物镜的次级电子束从初级电光系统偏转到次级电光系统，放大镜头 包括在次级电光学透镜中的至少一个级的大小 被偏转的二次电子束以及包括在检测系统中并且根据用于二次电子光学系统的二次电子束提供的检测器来检测二次电子束。

    ELECTRON BEAM DEVICE
    10.
    发明公开
    ELECTRON BEAM DEVICE 审中-公开
    ELEKTRONENSTRAHLEINRICHTUNG

    公开(公告)号：EP1703539A4

    公开(公告)日：2009-07-08

    申请号：EP04821103

    申请日：2004-11-25

    Applicant: EBARA CORP

    Inventor： WATANABE KENJI ,  SATAKE TOHRU ,  NAKASUJI MAMORU ,  MURAKAMI TAKESHI ,  KARIMATA TSUTOMU ,  NOJI NOBUHARU ,  TOHYAMA KEIICHI ,  HATAKEYAMA MASAHIRO

    IPC: H01J37/29 ,  H01L21/66 ,  H01J37/073 ,  H01J37/12 ,  H01J37/147 ,  H01J37/26 ,  H01J37/28

    CPC classification number: H01J37/261 ,  H01J37/28 ,  H01J2237/06341 ,  H01J2237/2446 ,  H01J2237/24592 ,  H01J2237/2538

    Abstract: An electron device capable of evaluating a sample at high throughput and high S/N. An electron beam emitted from an electron gun is irradiated, through an electrostatic lens (4-1), an objective lens (11-1), etc., in a diagonal direction on a sample (W) placed on an X-Y-theta stage (9-1), and secondary electrons or reflected electrons are discharged from the sample (W). The incident angle of the primary electron beam is set to about not less than 35º and less than 90º by controlling a polarizer (8-1). The electrons discharged from the sample (W) are guided in the vertical direction to form an image on a detector.

    Abstract translation: 一种能够以高吞吐量和高信噪比评估样品的电子器件。 从电子枪发射的电子束通过静电透镜（4-1），物镜（11-1）等在对角线方向上放置在放置在XY-θ台上的样品（W）上 （9-1），从样品（W）排出二次电子或反射电子。 通过控制偏振器（8-1），一次电子束的入射角设定为不小于35°且小于90°。 从样品（W）排出的电子在垂直方向上被引导以在检测器上形成图像。

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