公开(公告)号：US20240405169A1

公开(公告)日：2024-12-05

申请号：US18675532

申请日：2024-05-28

Applicant: EPISTAR CORPORATION

Inventor： Chong-Yu WANG ,  Wei-Shan HU ,  Ching-Tai CHENG ,  Chien-Chih CHEN ,  Min-Hsun HSIEH

IPC: H01L33/50 ,  H01L25/16

Abstract: A wavelength conversion unit arrangement includes a carrier and a wavelength conversion unit. The wavelength conversion unit includes a wavelength conversion layer and a filter layer, and the filter layer attaches the wavelength conversion unit to the carrier. The filter layer has a first surface facing the carrier and a second surface opposite the first surface, and the first surface and the second surface have different textures.

公开(公告)号：US20240421277A1

公开(公告)日：2024-12-19

申请号：US18741956

申请日：2024-06-13

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH ,  Ying-Yang SU ,  Chien-Chih CHEN ,  Wei-Shan HU ,  Ching-Tai CHENG ,  Chung-Che TENG ,  Tai-Ni CHU ,  Hsin-Mao LIU

IPC: H01L33/62 ,  H01L25/075

Abstract: A pixel structure includes a first light-emitting diode for emitting a first light, wherein the first light-emitting diode has a first semiconductor layer, a first light-emitting surface, and a first electrode under the first semiconductor layer away from the first light-emitting surface; a second light-emitting diode for emitting a second light, wherein the second light-emitting diode has a second semiconductor layer, a second light-emitting surface, and a second electrode under the second semiconductor layer away from the second light-emitting surface; a dielectric layer surrounding and contacting the first semiconductor layer and the second light-emitting diode and exposing the first light-emitting surface, the first electrode, the second light-emitting surface and the second electrode; a common conductive structure having a semiconductor layer and a metal layer; and a light-transmitting conductive layer covering and electrical connecting the first light-emitting diode, the second light-emitting diode and the common conductive structure.

公开(公告)号：US20240420988A1

公开(公告)日：2024-12-19

申请号：US18740907

申请日：2024-06-12

Applicant: EPISTAR CORPORATION

Inventor： Chien-Chih CHEN ,  Wei-Shan HU ,  Ching-Tai CHENG

IPC: H01L21/683 ,  B32B3/26 ,  B32B3/30 ,  B32B7/14 ,  B32B37/12 ,  H01L33/00

Abstract: An embodiment of the present disclosure provides a semiconductor device arrangement. This semiconductor device arrangement includes a carrier, a first semiconductor device, a second semiconductor device, a first adhesive portion, and a second adhesive portion. The first semiconductor device and the second semiconductor device are separately arranged on the carrier. The first adhesive portion and the second adhesive portion are separately arranged on the carrier, the first adhesive portion is located between the first semiconductor device and the carrier, and the second adhesive portion is located between the second semiconductor device and the carrier. In the cross-sectional view, the first adhesive portion includes an inclined sidewall, and the inclined sidewall is adjacent to the carrier and forms an interior angle greater than 90 degrees to the carrier.