公开(公告)号：US20250040312A1

公开(公告)日：2025-01-30

申请号：US18785083

申请日：2024-07-26

Applicant: EPISTAR CORPORATION

Inventor： Tai-Ni CHU ,  Wei-Shan HU ,  Ching-Tai CHENG

IPC: H01L33/48 ,  H01L25/075

Abstract: A semiconductor device arrangement structure includes a carrier, a first semiconductor device, a second semiconductor device, a first adhesive part, and a second adhesive part. The first semiconductor device and the second semiconductor device are located on the carrier and separated from each other. The first adhesive part and the second adhesive part are separated from each other. The first adhesive part is located between the first semiconductor device and the carrier, and the second adhesive part is located between the second semiconductor device and the carrier. In a top view, the first adhesive part has a first outer contour surrounding the first semiconductor device. The first outer contour has at least one round corner.

公开(公告)号：US20240421277A1

公开(公告)日：2024-12-19

申请号：US18741956

申请日：2024-06-13

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH ,  Ying-Yang SU ,  Chien-Chih CHEN ,  Wei-Shan HU ,  Ching-Tai CHENG ,  Chung-Che TENG ,  Tai-Ni CHU ,  Hsin-Mao LIU

IPC: H01L33/62 ,  H01L25/075

Abstract: A pixel structure includes a first light-emitting diode for emitting a first light, wherein the first light-emitting diode has a first semiconductor layer, a first light-emitting surface, and a first electrode under the first semiconductor layer away from the first light-emitting surface; a second light-emitting diode for emitting a second light, wherein the second light-emitting diode has a second semiconductor layer, a second light-emitting surface, and a second electrode under the second semiconductor layer away from the second light-emitting surface; a dielectric layer surrounding and contacting the first semiconductor layer and the second light-emitting diode and exposing the first light-emitting surface, the first electrode, the second light-emitting surface and the second electrode; a common conductive structure having a semiconductor layer and a metal layer; and a light-transmitting conductive layer covering and electrical connecting the first light-emitting diode, the second light-emitting diode and the common conductive structure.