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    PIXEL STRUCTURE AND DISPLAY DEVICE USING THE SAME
    2.
    发明申请
    PIXEL STRUCTURE AND DISPLAY DEVICE USING THE SAME 有权

    公开(公告)号：US20240421277A1

    公开(公告)日：2024-12-19

    申请号：US18741956

    申请日：2024-06-13

    Applicant: EPISTAR CORPORATION

    Inventor： Min-Hsun HSIEH ,  Ying-Yang SU ,  Chien-Chih CHEN ,  Wei-Shan HU ,  Ching-Tai CHENG ,  Chung-Che TENG ,  Tai-Ni CHU ,  Hsin-Mao LIU

    IPC: H01L33/62 ,  H01L25/075

    Abstract: A pixel structure includes a first light-emitting diode for emitting a first light, wherein the first light-emitting diode has a first semiconductor layer, a first light-emitting surface, and a first electrode under the first semiconductor layer away from the first light-emitting surface; a second light-emitting diode for emitting a second light, wherein the second light-emitting diode has a second semiconductor layer, a second light-emitting surface, and a second electrode under the second semiconductor layer away from the second light-emitting surface; a dielectric layer surrounding and contacting the first semiconductor layer and the second light-emitting diode and exposing the first light-emitting surface, the first electrode, the second light-emitting surface and the second electrode; a common conductive structure having a semiconductor layer and a metal layer; and a light-transmitting conductive layer covering and electrical connecting the first light-emitting diode, the second light-emitting diode and the common conductive structure.

    LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREOF AND DISPLAY MODULE USING THE SAME
    4.
    发明申请
    LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREOF AND DISPLAY MODULE USING THE SAME 审中-公开

    公开(公告)号：US20200266177A1

    公开(公告)日：2020-08-20

    申请号：US16866278

    申请日：2020-05-04

    Applicant: EPISTAR CORPORATION

    Inventor： Min-Hsun HSIEH ,  Hsin-Mao LIU ,  Ying-Yang SU

    IPC: H01L25/075 ,  H01L27/146 ,  G01R31/26 ,  H01L33/50 ,  H01L23/00

    Abstract: A light-emitting device includes a light-emitting element having a first-type semiconductor layer, a second-type semiconductor layer, an active stack between the first-type semiconductor layer and the second-type semiconductor layer, a bottom surface, and a top surface. A first electrode is disposed on the bottom surface and electrically connected to the first-type semiconductor layer. A second electrode is disposed on the bottom surface and electrically connected to the second-type semiconductor layer. A supporting structure is disposed on the top surface. The supporting structure has a thickness and a maximum width. A ratio of the maximum width to the thickness is of 2˜150.

    SEMICONDUCTOR ELEMENT ARRANGEMENT STRUCTURE
    5.
    发明申请
    SEMICONDUCTOR ELEMENT ARRANGEMENT STRUCTURE 有权

    公开(公告)号：US20230117490A1

    公开(公告)日：2023-04-20

    申请号：US17966683

    申请日：2022-10-14

    Applicant: EPISTAR CORPORATION

    Inventor： Chang-Tai HSIAO ,  Ying-Yang SU

    IPC: H01L21/683 ,  H01L25/075 ,  H01L33/46 ,  H01L33/62

    Abstract: A semiconductor element arrangement structure is provided. The semiconductor element arrangement structure includes a carrier substrate, first and second adhesive layers respectively disposed on the carrier substrate and separated from each other, and first and second semiconductor elements disposed on the first and second adhesive layers, respectively. The first semiconductor element has first and second electrodes on the same side of the first semiconductor element, and the second semiconductor element has third and fourth electrodes on the same side of the second semiconductor element. The first adhesive layer is in direct contact with the first and second electrodes, and the second adhesive layer is in direct contact with the third and fourth electrodes. The first adhesive layer has a first width between the first and second electrodes and has a second width not between the first and second electrodes that is less than the first width.

    METHOD AND STRUCTURE FOR DIE BONDING USING ENERGY BEAM
    6.
    发明申请
    METHOD AND STRUCTURE FOR DIE BONDING USING ENERGY BEAM 审中-公开

    公开(公告)号：US20200243737A1

    公开(公告)日：2020-07-30

    申请号：US16748860

    申请日：2020-01-22

    Applicant: EPISTAR CORPORATION

    Inventor： Min-Hsun HSIEH ,  Shih-An LIAO ,  Ying-Yang SU ,  Hsin-Mao LIU ,  Tzu-Hsiang WANG ,  Chi-Chih PU

    IPC: H01L33/62 ,  H01L33/60 ,  H01L25/075

    Abstract: Disclosed is a die-bonding method which provides a target substrate having a circuit structure with multiple electrical contacts and multiple semiconductor elements each semiconductor element having a pair of electrodes, arranges the multiple semiconductor elements on the target substrate with the pair of electrodes of each semiconductor element aligned with two corresponding electrical contacts of the target substrate, and applies at least one energy beam to join and electrically connect the at least one pair of electrodes of every at least one of the multiple semiconductor elements and the corresponding electrical contacts aligned therewith in a heating cycle by heat carried by the at least one energy beam in the heating cycle. The die-bonding method delivers scattering heated dots over the target substrate to avoid warpage of PCB and ensures high bonding strength between the semiconductor elements and the circuit structure of the target substrate.

    METHOD AND STRUCTURE FOR DIE BONDING USING ENERGY BEAM
    7.
    发明申请
    METHOD AND STRUCTURE FOR DIE BONDING USING ENERGY BEAM 审中-公开

    公开(公告)号：US20200243478A1

    公开(公告)日：2020-07-30

    申请号：US16551764

    申请日：2019-08-27

    Applicant: EPISTAR CORPORATION

    Inventor： Min-Hsun HSIEH ,  Shih-An LIAO ,  Ying-Yang SU ,  Hsin-Mao LIU ,  Tzu-Hsiang WANG ,  Chi-Chih PU

    IPC: H01L23/00 ,  H01L25/16 ,  H01L25/075 ,  H01L23/498 ,  B23K26/22

    Abstract: Disclosed is a die-bonding method which provides a target substrate having a circuit structure with multiple electrical contacts and multiple semiconductor elements each semiconductor element having a pair of electrodes, arranges the multiple semiconductor elements on the target substrate with the pair of electrodes of each semiconductor element aligned with two corresponding electrical contacts of the target substrate, and applies at least one energy beam to join and electrically connect the at least one pair of electrodes of every at least one of the multiple semiconductor elements and the corresponding electrical contacts aligned therewith in a heating cycle by heat carried by the at least one energy beam in the heating cycle. The die-bonding method delivers scattering heated dots over the target substrate to avoid warpage of PCB and ensures high bonding strength between the semiconductor elements and the circuit structure of the target substrate.

    METHOD AND STRUCTURE FOR DIE BONDING USING ENERGY BEAM
    9.
    发明申请
    METHOD AND STRUCTURE FOR DIE BONDING USING ENERGY BEAM 有权

    公开(公告)号：US20220310555A1

    公开(公告)日：2022-09-29

    申请号：US17838307

    申请日：2022-06-13

    Applicant: EPISTAR CORPORATION

    Inventor： Min-Hsun HSIEH ,  Shih-An LIAO ,  Ying-Yang SU ,  Hsin-Mao LIU ,  Tzu-Hsiang WANG ,  Chi-Chih PU

    IPC: H01L23/00 ,  H01L25/16 ,  H01L25/075 ,  H01L23/498 ,  B23K26/22

    Abstract: Disclosed is a die-bonding method which provides a target substrate having a circuit structure with multiple electrical contacts and multiple semiconductor elements each semiconductor element having a pair of electrodes, arranges the multiple semiconductor elements on the target substrate with the pair of electrodes of each semiconductor element aligned with two corresponding electrical contacts of the target substrate, and applies at least one energy beam to join and electrically connect the at least one pair of electrodes of every at least one of the multiple semiconductor elements and the corresponding electrical contacts aligned therewith in a heating cycle by heat carried by the at least one energy beam in the heating cycle. The die-bonding method delivers scattering heated dots over the target substrate to avoid warpage of PCB and ensures high bonding strength between the semiconductor elements and the circuit structure of the target substrate.

    LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREOF AND DISPLAY MODULE USING THE SAME
    10.
    发明申请
    LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREOF AND DISPLAY MODULE USING THE SAME 有权

    公开(公告)号：US20210288232A1

    公开(公告)日：2021-09-16

    申请号：US17332378

    申请日：2021-05-27

    Applicant: EPISTAR CORPORATION

    Inventor： Min-Hsun HSIEH ,  Hsin-Mao LIU ,  Ying-Yang SU

    IPC: H01L33/58 ,  H01L25/075 ,  H01L23/00 ,  H01L33/50 ,  H01L27/15 ,  H01L33/60

    Abstract: A light-emitting device includes a light-emitting element having a first-type semiconductor layer, a second-type semiconductor layer, an active stack between the first-type semiconductor layer and the second-type semiconductor layer, a bottom surface, and a top surface. A first electrode is disposed on the bottom surface and electrically connected to the first-type semiconductor layer. A second electrode is disposed on the bottom surface and electrically connected to the second-type semiconductor layer. A supporting structure is disposed on the top surface. The supporting structure has a thickness and a maximum width. A ratio of the maximum width to the thickness is of 2˜150.

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