公开(公告)号：US20240405169A1

公开(公告)日：2024-12-05

申请号：US18675532

申请日：2024-05-28

Applicant: EPISTAR CORPORATION

Inventor： Chong-Yu WANG ,  Wei-Shan HU ,  Ching-Tai CHENG ,  Chien-Chih CHEN ,  Min-Hsun HSIEH

IPC: H01L33/50 ,  H01L25/16

Abstract: A wavelength conversion unit arrangement includes a carrier and a wavelength conversion unit. The wavelength conversion unit includes a wavelength conversion layer and a filter layer, and the filter layer attaches the wavelength conversion unit to the carrier. The filter layer has a first surface facing the carrier and a second surface opposite the first surface, and the first surface and the second surface have different textures.

公开(公告)号：US20250040312A1

公开(公告)日：2025-01-30

申请号：US18785083

申请日：2024-07-26

Applicant: EPISTAR CORPORATION

Inventor： Tai-Ni CHU ,  Wei-Shan HU ,  Ching-Tai CHENG

IPC: H01L33/48 ,  H01L25/075

Abstract: A semiconductor device arrangement structure includes a carrier, a first semiconductor device, a second semiconductor device, a first adhesive part, and a second adhesive part. The first semiconductor device and the second semiconductor device are located on the carrier and separated from each other. The first adhesive part and the second adhesive part are separated from each other. The first adhesive part is located between the first semiconductor device and the carrier, and the second adhesive part is located between the second semiconductor device and the carrier. In a top view, the first adhesive part has a first outer contour surrounding the first semiconductor device. The first outer contour has at least one round corner.

公开(公告)号：US20200373468A1

公开(公告)日：2020-11-26

申请号：US16990121

申请日：2020-08-11

Applicant: EPISTAR CORPORATION

Inventor： Ching-Tai CHENG ,  Shau-Yi CHEN ,  Yih-Hua RENN ,  Wei-Shan HU ,  Pei-Hsuan LAN

IPC: H01L33/50 ,  H01L25/075 ,  H01L33/44 ,  H01L33/60

Abstract: The application discloses a light-emitting device including a carrier, a light-emitting element and a connecting structure. The carrier includes a first connecting portion and a first necking portion extended from the first connecting portion. The first connecting portion has a first width, and the first necking portion has a second width. The second width is less than the first width. The light-emitting element includes a first light-emitting layer being able to emit a first light and a first contacting electrode formed under the first light-emitting layer. The first contacting electrode is corresponded to the first connecting portion. The connecting structure includes a first electrical connecting portion and a protecting portion surrounding the first electrical connecting portion. The first electrical connecting portion is electrically connected to the first connecting portion and the first contacting electrode. The first connecting portion substantially is located within a range surrounded by the protecting portion.

公开(公告)号：US20240405181A1

公开(公告)日：2024-12-05

申请号：US18733304

申请日：2024-06-04

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH ,  Shih-An LIAO ,  Wei-Yu CHEN ,  Li-Shen TANG ,  Kun-Wei KAO ,  Jia-Xing CHUNG ,  Wei-Shan HU ,  Ching-Tai CHENG ,  Chang-Tai HSIAO ,  Yih-Hua RENN ,  Chun-Yen WU

IPC: H01L33/62 ,  H01L25/075 ,  H01L33/40

Abstract: An embodiment of the present disclosure provides a semiconductor device arrangement. This arrangement includes a substrate, an adhesive structure, and a first semiconductor device. The substrate includes an upper surface. The adhesive structure is located on the upper surface and includes a first concave region. The first semiconductor device includes a lower surface facing toward the adhesive structure and a conductive bump located under the lower surface and in the first concave region. The conductive bump includes a first portion and a second portion. Wherein the lower surface does not contact the adhesive structure, the first portion contacts the first concave region, and the second portion does not contact the first concave region.

公开(公告)号：US20230176417A1

公开(公告)日：2023-06-08

申请号：US18072264

申请日：2022-11-30

Applicant: EPISTAR CORPORATION ,  YENRICH TECHNOLOGY CORPORATION

Inventor： Wen-Chien WU ,  Wei-Shan HU ,  Ching-Tai CHENG

IPC: G02F1/13357

CPC classification number: G02F1/133603 ,  G02F1/133605 ,  G02F1/133611

Abstract: A backlight module is provided. The backlight module includes a substrate having a substrate surface, a conductive layer disposed on the substrate surface, a plurality of LED chips disposed on and electrically connected to the conductive layer, a light-permeable layer having a light-permeable surface away from the substrate surface, and a pattern layer disposed on the light-permeable surface and having a plurality of first patterns corresponding to and respectively located above the plurality of LED chips. Wherein, each first pattern has a maximum width. A maximum width of one first pattern satisfies the following formula:


WP≥2n(TE−TL)(1−1/n2)1/2+WL;

wherein WP is the maximum width of one first pattern, n is a refractivity of the light-permeable layer, TE is a thickness of the light-permeable layer, TL is a thickness of the LED chip, WL is a maximum width of LED chip corresponding to the first pattern.

公开(公告)号：US20240421277A1

公开(公告)日：2024-12-19

申请号：US18741956

申请日：2024-06-13

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH ,  Ying-Yang SU ,  Chien-Chih CHEN ,  Wei-Shan HU ,  Ching-Tai CHENG ,  Chung-Che TENG ,  Tai-Ni CHU ,  Hsin-Mao LIU

IPC: H01L33/62 ,  H01L25/075

Abstract: A pixel structure includes a first light-emitting diode for emitting a first light, wherein the first light-emitting diode has a first semiconductor layer, a first light-emitting surface, and a first electrode under the first semiconductor layer away from the first light-emitting surface; a second light-emitting diode for emitting a second light, wherein the second light-emitting diode has a second semiconductor layer, a second light-emitting surface, and a second electrode under the second semiconductor layer away from the second light-emitting surface; a dielectric layer surrounding and contacting the first semiconductor layer and the second light-emitting diode and exposing the first light-emitting surface, the first electrode, the second light-emitting surface and the second electrode; a common conductive structure having a semiconductor layer and a metal layer; and a light-transmitting conductive layer covering and electrical connecting the first light-emitting diode, the second light-emitting diode and the common conductive structure.

公开(公告)号：US20240420988A1

公开(公告)日：2024-12-19

申请号：US18740907

申请日：2024-06-12

Applicant: EPISTAR CORPORATION

Inventor： Chien-Chih CHEN ,  Wei-Shan HU ,  Ching-Tai CHENG

IPC: H01L21/683 ,  B32B3/26 ,  B32B3/30 ,  B32B7/14 ,  B32B37/12 ,  H01L33/00

Abstract: An embodiment of the present disclosure provides a semiconductor device arrangement. This semiconductor device arrangement includes a carrier, a first semiconductor device, a second semiconductor device, a first adhesive portion, and a second adhesive portion. The first semiconductor device and the second semiconductor device are separately arranged on the carrier. The first adhesive portion and the second adhesive portion are separately arranged on the carrier, the first adhesive portion is located between the first semiconductor device and the carrier, and the second adhesive portion is located between the second semiconductor device and the carrier. In the cross-sectional view, the first adhesive portion includes an inclined sidewall, and the inclined sidewall is adjacent to the carrier and forms an interior angle greater than 90 degrees to the carrier.

公开(公告)号：US20210050478A1

公开(公告)日：2021-02-18

申请号：US16539539

申请日：2019-08-13

Applicant: EPISTAR CORPORATION

Inventor： Ying-Yong SU ,  Hsin-Mao LIU ,  Wei-Shan HU ,  Ching-Tai CHENG

IPC: H01L33/20 ,  H01L33/38

Abstract: The light-emitting diode package includes a plurality of bumps being a couple corresponding to each other. Each of the bumps has a first part and a second part placed under the first part, and a gap is formed between the bumps in a period-repeating wriggle shape or an irregular wriggle shape. Accordingly, the distance between the bumps of the light-emitting diode package is small, which results in a less stress being concentrated at the space between the bumps, as a result, a crack is difficultly caused by the stress to the light-emitting diode package. In other words, the structural strength between the bumps and the covering part is enhanced. Still, while being manufactured, the yield rate of the light-emitting diode package is also improved since there is almost no crack to reduce the yield rate.

公开(公告)号：US20250112195A1

公开(公告)日：2025-04-03

申请号：US18903920

申请日：2024-10-01

Applicant: EPISTAR CORPORATION

Inventor： Wen-Chien WU ,  Wei-Shan HU ,  Ching-Tai CHENG

IPC: H01L23/00 ,  H01L23/12 ,  H01L25/075

Abstract: A semiconductor device arrangement structure includes a carrier, semiconductor devices, and an adhesive layer. The semiconductor devices are separately disposed on the carrier, and each of the semiconductor devices includes an electrode. The adhesive layer is disposed between the carrier and the semiconductor devices, and the semiconductor devices are attached to the adhesive layer which is a continuous distributed single-layered structure. The adhesive layer includes unselected regions and a selected region, wherein the unselected regions are covered by the semiconductor devices respectively, and the selected region is not covered by the semiconductor devices. The adhesive layer further includes an indentation disposed on a surface of the selected region, and in a cross-sectional view or a top view, the contour of the indentation is a scaled copy of a contour of and the electrode, and the indentation has a depth less than that of the electrode.

公开(公告)号：US20240363817A1

公开(公告)日：2024-10-31

申请号：US18208353

申请日：2023-06-12

Applicant: EPISTAR CORPORATION

Inventor： Jia-Xing CHUNG ,  Wei-Shan HU ,  Ching-Tai CHENG ,  Shih-An LIAO

IPC: H01L33/62 ,  H01L33/38 ,  H01L33/40 ,  H01S5/042

CPC classification number: H01L33/62 ,  H01L33/38 ,  H01L33/40 ,  H01S5/04252 ,  H01S5/04254 ,  H01L33/20

Abstract: A semiconductor device includes a semiconductor stack, a protective layer on the semiconductor stack, an electrode on the semiconductor stack and electrically connected to the semiconductor stack, and a conductive bump on the electrode. The thickness of the conductive bump is measured from the topmost point of the conductive bump to the uppermost surface of the protective layer. The ratio of the thickness of the conductive bump to the maximum width of the conductive bump is between 0.1 and 0.4, and the electrode is devoid of gold.