Abstract:
An optoelectronic system having a first optoelectronic element with a first surface; a second optoelectronic element with a second surface; an IC, with a third surface coplanar with the first surface and the second surface; an electrical connection, electrically connecting the first optoelectronic element and the IC; and a material, surrounding the first optoelectronic element, the second optoelectronic element, and the IC, and exposing the first surface, the second surface, and the third surface.
Abstract:
This disclosure discloses an illumination apparatus. The illumination apparatus comprises a cover comprising a second portion and a first portion, and a light source disposed within the cover. An average thickness of the first portion is greater than that of the second portion.
Abstract:
The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.
Abstract:
A light-emitting apparatus includes a first light-emitting device, a second light-emitting device, separated from the first light-emitting device by a first distance, a diffusion layer, covering the first light-emitting device and the second light-emitting device, a prism layer, disposed on the diffusion layer and an LCD module, disposed on the prism layer. The first light-emitting device includes a light-field with a radius on the LCD module and the radius is two or more times larger than the first distance.
Abstract:
The present application discloses a light-emitting apparatus having a light-emitting device and a wavelength conversion layer. The light-emitting device has a first top surface and a first side surface, and the wavelength conversion layer has a second top surface and a second side surface and covers the first top surface. A ratio of a distance between the first top surface to the second top surface and a distance between the first side surface and the second side surface is between 1.1˜1.3.
Abstract:
Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer, wherein the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first conductivity type semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second conductivity type semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.
Abstract:
The present application discloses a light-emitting apparatus having a light-emitting device and a wavelength conversion layer. The light-emitting device has a first top surface and a first side surface, and the wavelength conversion layer has a second top surface and a second side surface and covers the first top surface. A ratio of a distance between the first top surface to the second top surface and a distance between the first side surface and the second side surface is between 1.1˜1.3.
Abstract:
The application discloses an array-type light-emitting device comprising a substrate, a semiconductor light-emitting array formed on the substrate and emitting a first light with a first spectrum, wherein the semiconductor light-emitting array comprises a first light-emitting unit and a second light-emitting units, a first wavelength conversion layer formed on the first light-emitting unit for converting the first light into a third light with a third spectrum, and a circuit layer connecting the first light-emitting unit and the second light-emitting unit in a connection form to make the first light-emitting and the second light-emitting unit light alternately in accordance with a predetermined clock when driving by a power supply.
Abstract:
An integrated lighting apparatus comprises a first control device including a semiconductor substrate, an integrated circuit block formed above a first portion of the semiconductor substrate, and a plurality of power pads formed above the integrated circuit block; a first light emitting device formed above a second portion of the semiconductor substrate; and a through plug passing through the semiconductor substrate for electrically connecting the first control device and the first light emitting device.
Abstract:
Disclosed is a light-emitting device comprising: a carrier; a light-emitting element disposed on the carrier; a first light guide layer covering the light-emitting element; a second light guide layer covering the first light guide layer; a low refractive index layer between the first light guide layer and the second light guide layer to reflect the light from the second light guide layer; and a wavelength conversion layer covering the second light guide layer; wherein the low refractive index layer has a refractive index smaller than one of the refractive indices of first light guide layer and the second light guide layer.