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公开(公告)号：US20150028374A1
公开(公告)日：2015-01-29
申请号：US14339579
申请日：2014-07-24
Applicant: EPISTAR CORPORATION
Inventor： Chiao-Wen YEH , Hsing-Chao CHEN , Pei-Lun Chien
IPC: H01L33/50
CPC classification number: H01L33/504 , G01J5/60 , G01J2005/608 , H01L33/54 , H01L2933/0041
Abstract: The present application discloses a light-emitting element comprising a semiconductor light-emitting stack emitting a first light which has a first color coordinate, a first wavelength conversion material on the semiconductor light-emitting stack converting the first light to emit a second light, and a second wavelength conversion material on the first wavelength conversion material converting the second light to emit a third light. The first light and the second light are mixed to be a fourth light having a second color coordinate. The third light and the fourth light are mixed to be a fifth light having a third color coordinate, and the second color coordinate locates at the top right of the first color coordinate and the third color coordinate locates at the top right of the second color coordinate.
Abstract translation: 本发明公开了一种发光元件，其包括发射具有第一颜色坐标的第一光的半导体发光层，在半导体发光叠层上转换第一光以发射第二光的第一波长转换材料，以及 在所述第一波长转换材料上的第二波长转换材料转换所述第二光以发射第三光。 将第一光和第二光混合成具有第二颜色坐标的第四光。 第三光和第四光被混合成具有第三颜色坐标的第五光，第二颜色坐标位于第一颜色坐标的右上角，第三颜色坐标位于第二颜色坐标的右上角 。
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公开(公告)号：US20150214449A1
公开(公告)日：2015-07-30
申请号：US14679066
申请日：2015-04-06
Applicant: Epistar Corporation
Inventor： Cheng-Nan HAN , Tsung-Xian LEE , Min-Hsun HSIEH , Hung-Hsuan CHEN , Hsin-Mao LIU , Hsing-Chao CHEN , Ching-San TAO , Chih-Peng NI , Tzer- Perng CHEN , Jen-Chau WU
CPC classification number: H01L33/58 , H01L24/19 , H01L24/20 , H01L24/97 , H01L33/20 , H01L33/38 , H01L33/44 , H01L33/46 , H01L33/486 , H01L2933/0016
Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.
Abstract translation: 本公开公开了一种光电元件，包括：光电单元，包括第一金属层，第二金属层和最外侧表面; 绝缘层，其具有与光电单元重叠并延伸超过侧表面的第一部分，以及在横截面视图中与第一部分分离的第二部分; 以及形成在所述绝缘层上的第一导电层。
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公开(公告)号：US20180254391A1
公开(公告)日：2018-09-06
申请号：US15973091
申请日：2018-05-07
Applicant: Epistar Corporation
Inventor： Cheng-Nan HAN , Tsung-Xian LEE , Min-Hsun HSIEH , Hung-Hsuan CHEN , Hsin-Mao LIU , Hsing-Chao CHEN , Ching-San TAO , Chih-Peng NI , Tzer- Perng CHEN , Jen-Chau WU
CPC classification number: H01L33/58 , H01L24/19 , H01L24/20 , H01L24/97 , H01L33/20 , H01L33/38 , H01L33/44 , H01L33/46 , H01L33/486 , H01L2933/0016
Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.
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Patent Agency Ranking
公开(公告)号：US20180019382A9
公开(公告)日：2018-01-18
申请号：US14858477
申请日：2015-09-18
Applicant: EPISTAR CORPORATION
Inventor： Cheng-Nan HAN , Tsung-Xian LEE , Min-Hsun HSIEH , Hung-Hsuan CHEN , Hsin-Mao LIU , Hsing-Chao CHEN , Ching San TAO , Chih-Peng NI , Tzer-Perng CHEN , Jen-Chau WU , Masafumi SANO , Chih-Ming WANG
CPC classification number: H01L33/502 , H01L21/568 , H01L33/38 , H01L33/387 , H01L33/44 , H01L33/46 , H01L33/50 , H01L33/54 , H01L33/58 , H01L33/62 , H01L33/647 , H01L2224/04105 , H01L2224/19 , H01L2224/32245 , H01L2224/48091 , H01L2224/73265 , H01L2224/73267 , H01L2224/9222 , H01L2933/005 , H01L2933/0066 , H01L2924/00014
Abstract: An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.
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公开(公告)号：US20160013371A1
公开(公告)日：2016-01-14
申请号：US14858477
申请日：2015-09-18
Applicant: EPISTAR CORPORATION
Inventor： Cheng-Nan HAN , Tsung-Xian LEE , Min-Hsun HSIEH , Hung-Hsuan CHEN , Hsin-Mao LIU , Hsing-Chao CHEN , Ching San TAO , Chih-Peng NI , Tzer-Perng CHEN , Jen-Chau WU , Masafumi SANO , Chih-Ming WANG
CPC classification number: H01L33/502 , H01L21/568 , H01L33/38 , H01L33/387 , H01L33/44 , H01L33/46 , H01L33/50 , H01L33/54 , H01L33/58 , H01L33/62 , H01L33/647 , H01L2224/04105 , H01L2224/19 , H01L2224/32245 , H01L2224/48091 , H01L2224/73265 , H01L2224/73267 , H01L2224/9222 , H01L2933/005 , H01L2933/0066 , H01L2924/00014
Abstract: An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.
Abstract translation: 光电元件包括光电单元，第一金属层，第二金属层，导电层和透明结构。 光电单元在顶视图中具有中心线，顶表面和底表面。 第二金属层形成在顶表面上，并且具有与中心线交叉并延伸到第一金属层的延伸部分。 导电层覆盖第一金属层和延伸部分。 透明结构覆盖底面而不覆盖顶面。
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公开(公告)号：US20200313051A1
公开(公告)日：2020-10-01
申请号：US16900557
申请日：2020-06-12
Applicant: EPISTAR CORPORATION
Inventor： Cheng-Nan HAN , Tsung-Xian LEE , Min-Hsun HSIEH , Hung-Hsuan CHEN , Hsin-Mao LIU , Hsing-Chao CHEN , Ching-San TAO , Chih-Peng NI , Tzer- Perng CHEN , Jen-Chau WU
Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.
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公开(公告)号：US20170365750A1
公开(公告)日：2017-12-21
申请号：US15678885
申请日：2017-08-16
Applicant: Epistar Corporation
Inventor： Cheng-Nan HAN , Tsung-Xian LEE , Min-Hsun HSIEH , Hung-Hsuan CHEN , Hsin-Mao LIU , Hsing-Chao CHEN , Ching San TAO , Chih-Peng NI , Tzer-Perng CHEN , Jen-Chau WU , Masafumi SANO , Chih-Ming WANG
Abstract: An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.
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公开(公告)号：US20140070250A1
公开(公告)日：2014-03-13
申请号：US13856220
申请日：2013-04-03
Applicant: Epistar Corporation
Inventor： Shih-I CHEN , Tsung-Xian LEE , Yi-Ming CHEN , Wei-Yu CHEN , Ching- Pei LIN , Min-Hsun HSIEH , Cheng-Nan HAN , Tien-Yang WANG , Hsing-Chao CHEN , Hsin-Mao LIU , Zong-Xi CHEN , Tzu-Chieh HSU , Chien-Fu HUANG , Yu-Ren PENG
IPC: H01L33/50
CPC classification number: H01L33/502 , H01L25/0753 , H01L33/44 , H01L33/505 , H01L2924/0002 , H01L2924/00
Abstract: A light-emitting device of an embodiment of the present application comprises a substrate; a first semiconductor light-emitting structure formed on the substrate, wherein the first semiconductor light-emitting structure comprises a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type and a first active layer formed between the first semiconductor layer and the second semiconductor layer, wherein the first active layer is capable of emitting a first light having a first dominant wavelength; and a first thermal-sensitive layer formed on a path of the first light, wherein the first thermal-sensitive layer comprises a material characteristic which varies with a temperature change.
Abstract translation: 本申请的实施方式的发光装置包括：基板; 形成在所述基板上的第一半导体发光结构，其中所述第一半导体发光结构包括具有第一导电类型的第一半导体层，具有第二导电类型的第二半导体层和形成在所述第一半导体层之间的第一有源层 层和第二半导体层，其中第一有源层能够发射具有第一主波长的第一光; 以及形成在所述第一光的路径上的第一热敏层，其中所述第一热敏层包括随温度变化而变化的材料特性。
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