公开(公告)号：US20220302346A1

公开(公告)日：2022-09-22

申请号：US17203293

申请日：2021-03-16

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH ,  Yu-Tsu LEE ,  Wei-Jen HSUEH

IPC: H01L33/30 ,  H01L27/15 ,  H01L33/62 ,  H01L33/00

Abstract: A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a first semiconductor layer, an active region, a p-type or n-type layer, and a first metal element-containing structure. The first semiconductor layer has a surface including a first portion and a second portion. The active region is located on the first portion and includes AlGaInAs, InGaAsP, AlGaAsP or AlGaInP. The p-type or n-type layer includes an oxygen element (O) and a metal element, and is located on the second portion. The first metal element-containing structure is located on the p-type or n-type layer. The p-type or n-type layer physically contacts the first metal element-containing structure and the first semiconductor layer.

公开(公告)号：US20240186449A1

公开(公告)日：2024-06-06

申请号：US18396320

申请日：2023-12-26

Applicant: Epistar Corporation

Inventor： Min-Hsun HSIEH ,  Yu-Tsu LEE ,  Wei-Jen HSUEH

IPC: H01L33/30 ,  H01L27/15 ,  H01L33/00 ,  H01L33/62

CPC classification number: H01L33/30 ,  H01L27/156 ,  H01L33/0062 ,  H01L33/62

Abstract: The present disclosure provides a semiconductor device including a semiconductor structure, a first metal element-containing structure, and a layer. The semiconductor structure includes a first semiconductor layer having a first material, a second semiconductor layer, an active region between the first semiconductor layer and the second semiconductor layer. The first metal element-containing structure is located on the semiconductor structure and includes a first metal element. The layer has a second material and a second metal element and is located between the first semiconductor layer and the first metal element-containing structure. The first material has a conduction band edge Ec and a valence band edge Ev, and the second material has a work function WF1, when the first semiconductor layer is of an n-type conductivity, the work function WF1 fulfills WF1 (Ec+Ev)/2.

公开(公告)号：US20250015246A1

公开(公告)日：2025-01-09

申请号：US18893462

申请日：2024-09-23

Applicant: EPISTAR CORPORATION

Inventor： Yu-Tsu LEE ,  Yi-Yang CHIU ,  Chun-Wei CHANG ,  Min-Hao YANG ,  Wei-Jen HSUEH ,  Yi-Ming CHEN ,  Shih-Chang LEE ,  Chung-Hao WANG

IPC: H01L33/62 ,  H01L33/10 ,  H01L33/30 ,  H01L33/38

Abstract: A semiconductor device is provided, which includes an active region, a first semiconductor layer, a first metal element-containing structure, a first p-type or n-type layer, a second semiconductor layer and an insulating layer. The active region has a first surface and a second surface. The first semiconductor layer is at the first surface. The first metal element-containing structure covers the first semiconductor layer and comprising a first metal element. The first p-type or n-type layer is between the first semiconductor layer and the first metal element-containing structure. The second semiconductor layer is between the first semiconductor layer and the first p-type or n-type layer. The insulating layer covers a portion of the first semiconductor layer and a portion of the second semiconductor. The first p-type or n-type layer includes an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm.

公开(公告)号：US20220302360A1

公开(公告)日：2022-09-22

申请号：US17203402

申请日：2021-03-16

Applicant: EPISTAR CORPORATION

Inventor： Yu-Tsu LEE ,  Yi-Yang CHIU ,  Chun-Wei CHANG ,  Min-Hao YANG ,  Wei-Jen HSUEH ,  Yi-Ming CHEN ,  Shih-Chang LEE ,  Chung-Hao WANG

IPC: H01L33/62 ,  H01L33/38 ,  H01L33/10 ,  H01L33/30

Abstract: A semiconductor device is provided, which includes a semiconductor stack and a first contact structure. The semiconductor stack includes an active layer and has a first surface and a second surface. The first contact structure is located on the first surface and includes a first semiconductor layer, a first metal element-containing structure and a first p-type or n-type layer. The first metal element-containing structure includes a first metal element. The first p-type or n-type layer physically contacts the first semiconductor layer and the first metal element-containing structure. The first p-type or n-type layer includes an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm, and the first semiconductor layer includes a phosphide compound or an arsenide compound.