公开(公告)号：US20220302346A1

公开(公告)日：2022-09-22

申请号：US17203293

申请日：2021-03-16

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH ,  Yu-Tsu LEE ,  Wei-Jen HSUEH

IPC: H01L33/30 ,  H01L27/15 ,  H01L33/62 ,  H01L33/00

Abstract: A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a first semiconductor layer, an active region, a p-type or n-type layer, and a first metal element-containing structure. The first semiconductor layer has a surface including a first portion and a second portion. The active region is located on the first portion and includes AlGaInAs, InGaAsP, AlGaAsP or AlGaInP. The p-type or n-type layer includes an oxygen element (O) and a metal element, and is located on the second portion. The first metal element-containing structure is located on the p-type or n-type layer. The p-type or n-type layer physically contacts the first metal element-containing structure and the first semiconductor layer.

公开(公告)号：US20240186449A1

公开(公告)日：2024-06-06

申请号：US18396320

申请日：2023-12-26

Applicant: Epistar Corporation

Inventor： Min-Hsun HSIEH ,  Yu-Tsu LEE ,  Wei-Jen HSUEH

IPC: H01L33/30 ,  H01L27/15 ,  H01L33/00 ,  H01L33/62

CPC classification number: H01L33/30 ,  H01L27/156 ,  H01L33/0062 ,  H01L33/62

Abstract: The present disclosure provides a semiconductor device including a semiconductor structure, a first metal element-containing structure, and a layer. The semiconductor structure includes a first semiconductor layer having a first material, a second semiconductor layer, an active region between the first semiconductor layer and the second semiconductor layer. The first metal element-containing structure is located on the semiconductor structure and includes a first metal element. The layer has a second material and a second metal element and is located between the first semiconductor layer and the first metal element-containing structure. The first material has a conduction band edge Ec and a valence band edge Ev, and the second material has a work function WF1, when the first semiconductor layer is of an n-type conductivity, the work function WF1 fulfills WF1 (Ec+Ev)/2.

公开(公告)号：US20240079524A1

公开(公告)日：2024-03-07

申请号：US18242758

申请日：2023-09-06

Applicant: EPISTAR CORPORATION

Inventor： Wei-Jen HSUEH ,  Shih-Chang LEE ,  Kuo-Feng HUANG ,  Wen-Luh LIAO ,  Jiong-Chaso SU ,  Yi-Chieh LIN ,  Hsuan-Le LIN

IPC: H01L33/30 ,  H01L33/04

CPC classification number: H01L33/30 ,  H01L33/04

Abstract: A semiconductor device comprises a first semiconductor structure, a second semiconductor structure located on the first semiconductor structure, and an active layer located between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure has a first conductivity type, and includes a plurality of first layers and a plurality of second layers alternately stacked. The second semiconductor structure has a second conductivity type opposite to the first conductivity type. The plurality of first layers and the plurality of second layers include indium and phosphorus, and the plurality of first layers and the plurality of second layers respectively have a first indium atomic percentage and a second indium atomic percentage. The second indium atomic percentage is different from the first indium atomic percentage.

公开(公告)号：US20250015246A1

公开(公告)日：2025-01-09

申请号：US18893462

申请日：2024-09-23

Applicant: EPISTAR CORPORATION

Inventor： Yu-Tsu LEE ,  Yi-Yang CHIU ,  Chun-Wei CHANG ,  Min-Hao YANG ,  Wei-Jen HSUEH ,  Yi-Ming CHEN ,  Shih-Chang LEE ,  Chung-Hao WANG

IPC: H01L33/62 ,  H01L33/10 ,  H01L33/30 ,  H01L33/38

Abstract: A semiconductor device is provided, which includes an active region, a first semiconductor layer, a first metal element-containing structure, a first p-type or n-type layer, a second semiconductor layer and an insulating layer. The active region has a first surface and a second surface. The first semiconductor layer is at the first surface. The first metal element-containing structure covers the first semiconductor layer and comprising a first metal element. The first p-type or n-type layer is between the first semiconductor layer and the first metal element-containing structure. The second semiconductor layer is between the first semiconductor layer and the first p-type or n-type layer. The insulating layer covers a portion of the first semiconductor layer and a portion of the second semiconductor. The first p-type or n-type layer includes an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm.

公开(公告)号：US20220302360A1

公开(公告)日：2022-09-22

申请号：US17203402

申请日：2021-03-16

Applicant: EPISTAR CORPORATION

Inventor： Yu-Tsu LEE ,  Yi-Yang CHIU ,  Chun-Wei CHANG ,  Min-Hao YANG ,  Wei-Jen HSUEH ,  Yi-Ming CHEN ,  Shih-Chang LEE ,  Chung-Hao WANG

IPC: H01L33/62 ,  H01L33/38 ,  H01L33/10 ,  H01L33/30

Abstract: A semiconductor device is provided, which includes a semiconductor stack and a first contact structure. The semiconductor stack includes an active layer and has a first surface and a second surface. The first contact structure is located on the first surface and includes a first semiconductor layer, a first metal element-containing structure and a first p-type or n-type layer. The first metal element-containing structure includes a first metal element. The first p-type or n-type layer physically contacts the first semiconductor layer and the first metal element-containing structure. The first p-type or n-type layer includes an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm, and the first semiconductor layer includes a phosphide compound or an arsenide compound.