公开(公告)号：US20230014825A1

公开(公告)日：2023-01-19

申请号：US17947526

申请日：2022-09-19

Applicant: EPISTAR CORPORATION

Inventor： Chung-Hao WANG ,  Yu-Chi WANG ,  Yi-Ming CHEN ,  Yi-Yang CHIU ,  Chun-Yu LIN

IPC: H01L33/20 ,  H01L33/46 ,  H01L33/38 ,  H01L33/22

Abstract: An optoelectronic semiconductor device includes a substrate, a first type semiconductor structure, a second type semiconductor structure, an active structure and a contact structure. The first type semiconductor structure is located on the substrate and has a first protrusion part with a first thickness and a platform part with a second thickness. The second type semiconductor structure is located on the first type semiconductor structure. The active structure is between the first type semiconductor structure and the second type semiconductor structure. The contact structure is disposed between the first type semiconductor structure and the substrate. The second thickness of the platform part is in a range of 0.01 μm to 1 μm.

公开(公告)号：US20240421253A1

公开(公告)日：2024-12-19

申请号：US18815298

申请日：2024-08-26

Applicant: EPISTAR CORPORATION

Inventor： Chung-Hao WANG ,  Yu-Chi WANG ,  Yi-Ming CHEN ,  Yi-Yang CHIU ,  Chun-Yu LIN

IPC: H01L33/20 ,  H01L33/00 ,  H01L33/22 ,  H01L33/38 ,  H01L33/46

Abstract: An optoelectronic semiconductor device includes a substrate, a first type semiconductor structure located on the substrate, a second type semiconductor structure located on the first type semiconductor structure, an active structure located between the first type semiconductor structure and the second type semiconductor structure, a plurality of contact portions disposed between the first type semiconductor structure and the substrate, and a first conductive oxide layer, a second conductive oxide layer, a first insulating layer and a second insulating layer. The plurality of contact portions is separated from each other, and one of them includes a semiconductor and has a side wall. The first conductive oxide layer contacts the contact portion, and the second conductive oxide layer contacts the first conductive oxide layer. The first insulating layer contacts the side wall. The second insulating layer is disposed between the first insulating layer and the second conductive oxide layer.

公开(公告)号：US20240405054A1

公开(公告)日：2024-12-05

申请号：US18679369

申请日：2024-05-30

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH ,  Chih-Ming WANG ,  Jan-Way CHIEN ,  Hui-Ching FENG ,  Yu-Chi WANG ,  Hsia-Ching CHENG

IPC: H01L27/15 ,  H01L25/13 ,  H01L33/50

Abstract: A monolithic array chip comprises a first semiconductor layer; a common electrode located on the first semiconductor layer; a first light-emitting unit with a first electrode located on the first semiconductor layer; a second light-emitting unit with a second electrode located on the first semiconductor layer; a third light-emitting unit with a third electrode located on the first semiconductor layer, wherein the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit are separated from each other by a trench.