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公开(公告)号：US20250126936A1
公开(公告)日：2025-04-17
申请号：US18984418
申请日：2024-12-17
Applicant: EPISTAR CORPORATION
Inventor： Jhih-Yong YANG , Hsin-Ying WANG , De-Shan KUO , Chao-Hsing CHEN , Yi-Hung LIN , Meng-Hsiang HONG , Kuo-Ching HUNG , Cheng-Lin LU
IPC: H10H20/841 , H10H20/814 , H10H20/831 , H10H20/857 , H10H29/14
Abstract: A light-emitting device includes: a semiconductor stack, including a first semiconductor layer, a second semiconductor layer and an active area between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes an upper surface; a plurality of exposed regions, formed in the semiconductor stack and exposing the upper surface; a lower protective layer, covering the exposed regions and the second semiconductor layer; a first reflective structure, formed on the second semiconductor layer and including a plurality of first openings on the second semiconductor layer; a second reflective structure, formed on the first reflective structure and electrically connected to the second semiconductor layer through the plurality of first openings; and an upper protective layer, formed on the second reflective structure; wherein the upper protective layer contacts and overlaps the lower protective layer on the exposed regions; wherein the first reflective structure and the second reflective structure are disposed between the lower protective layer and the upper protective layer.
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公开(公告)号：US20240014352A1
公开(公告)日：2024-01-11
申请号：US18370649
申请日：2023-09-20
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Cheng-Lin LU , Chih-Hao CHEN , Chi-Shiang HSU , I-Lun MA , Meng-Hsiang HONG , Hsin-Ying WANG , Kuo-Ching HUNG , Yi-Hung LIN
CPC classification number: H01L33/385 , H01L33/10 , H01L33/0075 , H01L33/32 , H01L33/46 , H01L33/24 , H01L25/0753 , H01L33/36
Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.
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Patent Agency Ranking
公开(公告)号：US20230197904A1
公开(公告)日：2023-06-22
申请号：US18113344
申请日：2023-02-23
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Cheng-Lin LU , Chih-Hao CHEN , Chi-Shiang HSU , I-Lun MA , Meng-Hsiang HONG , Hsin-Ying WANG , Kuo-Ching HUNG , Yi-Hung LIN
CPC classification number: H01L33/385 , H01L33/10 , H01L33/0075 , H01L33/32 , H01L33/46 , H01L33/24 , H01L25/0753 , H01L33/36
Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.
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公开(公告)号：US20210336090A1
公开(公告)日：2021-10-28
申请号：US17237825
申请日：2021-04-22
Applicant: EPISTAR CORPORATION
Inventor： Jhih-Yong YANG , Hsin-Ying WANG , De-Shan KUO , Chao-Hsing CHEN , Yi-Hung LIN , Meng-Hsiang HONG , Kuo-Ching HUNG , Cheng-Lin LU
Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer and an active area between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer including an upper surface; an exposed region formed in the semiconductor stack to expose the upper surface; a first protective layer covering the exposed region and a portion of the second semiconductor layer, wherein the first protective layer includes a first part with a first thickness formed on the upper surface and a second part with a second thickness formed on the second semiconductor layer, the first thickness is smaller than the second thickness; a first reflective structure formed on the second semiconductor layer and including one or multiple openings; and a second reflective structure formed on the first reflective structure and electrically connected to the second semiconductor layer through the one or multiple openings.
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公开(公告)号：US20210273137A1
公开(公告)日：2021-09-02
申请号：US17321078
申请日：2021-05-14
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Cheng-Lin LU , Chih-Hao CHEN , Chi-Shiang HSU , I-Lun MA , Meng-Hsiang HONG , Hsin-Ying WANG , Kuo-Ching HUNG , Yi-Hung LIN
Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device;
and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.-
公开(公告)号：US20220384687A1
公开(公告)日：2022-12-01
申请号：US17827622
申请日：2022-05-27
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Yi-Hung LIN , Kuo-Ching HUNG , Chi-Shiang HSU
Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer and a second semiconductor layer, wherein in a top view, the semiconductor stack comprises an outer peripheral region and an inner region, the outer peripheral region exposes the first semiconductor layer, and the second semiconductor layer is disposed in the inner region; an outer insulated structure comprising an insulation layer and a protective layer, the insulation layer comprising a plurality of first insulation layer outer openings and a second insulation layer opening; a first electrode covering the plurality of first insulation layer outer openings; and a second electrode covering the second insulation layer opening, wherein the outer insulated structure comprises a total thickness gradually decreasing from the outer peripheral region to the inner region.
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公开(公告)号：US20200044116A1
公开(公告)日：2020-02-06
申请号：US16529370
申请日：2019-08-01
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Cheng-Lin LU , Chih-Hao CHEN , Chi-Shiang HSU , I-Lun MA , Meng-Hsiang HONG , Hsin-Ying WANG , Kuo-Ching HUNG , Yi-Hung LIN
Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.
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