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    Light emitting device
    4.
    发明授权
    Light emitting device 有权

    公开(公告)号：US10700240B2

    公开(公告)日：2020-06-30

    申请号：US16700614

    申请日：2019-12-02

    Applicant: EPISTAR CORPORATION

    Inventor： Yao-Ru Chang ,  Wen-Luh Liao ,  Chun-Yu Lin ,  Hsin-Chan Chung ,  Hung-Ta Cheng

    IPC: H01L33/00 ,  H01L33/44 ,  H01L33/38 ,  H01L33/24 ,  H01L33/62 ,  H01L33/30 ,  H01L33/22 ,  H01L33/08 ,  H01L33/20

    Abstract: The present disclosure provides a light-emitting device. The light-emitting device includes a light emitting area and an electrode area. The light-emitting area includes a first semiconductor structure having a first active layer and a second semiconductor structure having a second active layer. The electrode area includes an external electrode structure surrounding the second semiconductor structure in a top view. The light-emitting area has a shape of circle or polygon in the top view. When the first semiconductor structure is driven by a first current, the first active layer can emit a first light with a first main wavelength. When the second semiconductor structure is driven by a second current, the active layer of the second semiconductor structure can emit a second light with a second main wavelength.

    LIGHT-EMITTING DEVICE
    6.
    发明申请
    LIGHT-EMITTING DEVICE 审中-公开
    发光装置

    公开(公告)号：US20160336482A1

    公开(公告)日：2016-11-17

    申请号：US14709985

    申请日：2015-05-12

    Applicant: EPISTAR CORPORATION

    Inventor： Shao-Ping Lu ,  Cheng-Feng Yu ,  Wen-Luh Liao ,  Hsin-Chan Chung ,  Shih-Chang Lee ,  Chih-Chiang Lu

    IPC: H01L33/08 ,  H01L33/10 ,  H01L33/22

    CPC classification number: H01L25/0756 ,  H01L33/10 ,  H01L33/22 ,  H01L33/38

    Abstract: An object of the present invention is to provide a light-emitting device comprising: a substrate, a first light-emitting semiconductor stack having a first transverse width, the first light-emitting semiconductor stack comprising a first active layer emitting a first radiation of a first dominant wavelength during operation; a second light-emitting semiconductor stack having a second transverse width less than the first transverse width and comprising a second active layer emitting a second radiation of a second dominant wavelength shorter than the first dominant wavelength during operation; and a first conductive connecting structure between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack, wherein the first conductive connecting structure is lattice-mismatched to the first active layer and to the second active layer, the first light-emitting semiconductor stack is between the substrate and the second light-emitting semiconductor stack.

    Abstract translation: 本发明的目的是提供一种发光器件，其包括：衬底，具有第一横向宽度的第一发光半导体堆叠，所述第一发光半导体堆叠包括发射第一辐射的第一有源层， 运行中第一主波长; 第二发光半导体堆叠，其具有小于第一横向宽度的第二横向宽度，并且包括在操作期间发射比第一主波长短的第二主波长的第二辐射的第二有源层; 以及在第一发光半导体堆叠和第二发光半导体堆叠之间的第一导电连接结构，其中第一导电连接结构与第一有源层和第二有源层晶格失配，第一发光 半导体堆叠在基板和第二发光半导体堆叠之间。

    Semiconductor device
    8.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10461223B2

    公开(公告)日：2019-10-29

    申请号：US16128604

    申请日：2018-09-12

    Applicant: EPISTAR CORPORATION

    Inventor： Yung-Fu Chang ,  Hsin-Chan Chung ,  Hung-Ta Cheng ,  Wen-Luh Liao ,  Shih-Chang Lee ,  Chih-Chiang Lu ,  Yi-Ming Chen ,  Yao-Ning Chan ,  Chun-Fu Tsai

    IPC: H01L33/38 ,  H01L33/30

    Abstract: A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode. From a top view of the semiconductor device, the first extending electrode, the second extending electrode and the third extending electrode respectively include a first curve having a first angle θ1, a second curve having a second angle θ2 and a third curve having a third angle θ3, wherein θ3>θ2>θ1 .

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