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    HIGH ASPECT RATIO STRUCTURE ANALYSIS
    1.
    发明申请
    HIGH ASPECT RATIO STRUCTURE ANALYSIS 审中-公开
    高比例结构分析

    公开(公告)号：WO2014055876A1

    公开(公告)日：2014-04-10

    申请号：PCT/US2013/063479

    申请日：2013-10-04

    Applicant: FEI COMPANY

    Inventor： LEE, Sang Hoon ,  STONE, Stacey ,  BLACKWOOD, Jeffrey ,  SCHMIDT, Michael

    IPC: G01N23/00 ,  B23K15/08 ,  G01B15/00

    CPC classification number: H01J37/3053 ,  C23C14/46 ,  G01N1/32 ,  H01J37/28 ,  H01J37/3056 ,  H01J37/3178 ,  H01J2237/3174 ,  H01J2237/31745 ,  H01J2237/31749

    Abstract: Curtaining artifacts on high aspect ratio features are reduced by reducing the distance between a protective layer and feature of interest. For example, the ion beam can mill at an angle to the work piece surface to create a sloped surface. A protective layer is deposited onto the sloped surface, and the ion beam mills through the protective layer to expose the feature of interest for analysis. The sloped mill positions the protective layer close to the feature of interest to reduce curtaining.

    Abstract translation: 通过减小保护层和感兴趣的特征之间的距离来减少高纵横比特征上的赝像。 例如，离子束可以与工件表面成一定角度磨，以产生倾斜的表面。 保护层沉积在倾斜表面上，并且离子束通过保护层研磨以暴露感兴趣的特征以进行分析。 倾斜的磨机使保护层位于感兴趣的特征附近以减少绘制。

    DEPOSITING MATERIAL INTO HIGH ASPECT RATIO STRUCTURES
    2.
    发明申请
    DEPOSITING MATERIAL INTO HIGH ASPECT RATIO STRUCTURES 审中-公开
    沉积材料进入高比例比例结构

    公开(公告)号：WO2014106202A1

    公开(公告)日：2014-07-03

    申请号：PCT/US2013/078354

    申请日：2013-12-30

    Applicant: FEI COMPANY

    Inventor： LEE, Sang Hoon ,  BLACKWOOD, Jeffrey ,  STONE, Stacey

    IPC: H01L21/205

    CPC classification number: H01L21/2605 ,  C23C16/045 ,  C23C16/047 ,  H01L21/02115 ,  H01L21/02277 ,  H01L21/0243 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/28556 ,  H01L21/76879 ,  H01L21/76898

    Abstract: A method is provided, along with a corresponding apparatus, for filling a high aspect ratio hole without voids or for producing high aspect ratio structures without voids. A beam having a diameter smaller than the diameter of the hole is directed into the hole to induced deposition beginning in the center region of the hole bottom. After an elongated structure is formed in the hole by the beam-induced deposition, a beam can then be scanned in a pattern at least as large as the hole diameter to fill the remainder of the hole. The high aspect ratio hole can then be cross-sectioned using an ion beam for observation without creating artefacts. When electron-beam-induced deposition is used, the electrons preferably have a high energy to reach the bottom of the hole, and the beam has a low current, to reduce spurious deposition by beam tails.

    Abstract translation: 提供了一种方法，连同相应的装置，用于填充没有空隙的高纵横比孔或用于产生没有空隙的高纵横比结构。 直径小于孔直径的梁被引导到孔中以在孔底的中心区域开始诱导沉积。 在通过光束沉积在孔中形成细长结构之后，可以以至少与孔直径一样大的图案扫描光束，以填充孔的其余部分。 然后可以使用离子束对高纵横比孔进行横截面观察而不产生伪影。 当使用电子束感应沉积时，电子优选具有高能量以到达孔的底部，并且光束具有低电流，以减少光束尾部的杂散沉积。

    MULTIDIMENSIONAL STRUCTURAL ACCESS
    4.
    发明申请
    MULTIDIMENSIONAL STRUCTURAL ACCESS 审中-公开
    多维结构访问

    公开(公告)号：WO2014055935A1

    公开(公告)日：2014-04-10

    申请号：PCT/US2013/063556

    申请日：2013-10-04

    Applicant: FEI COMPANY

    Inventor： BLACKWOOD, Jeffrey ,  LEE, Sang Hoon ,  SCHMIDT, Michael ,  STONE, Stacey ,  HOLLAND, Karey

    IPC: H01L21/66

    CPC classification number: G01R31/2653 ,  G01N1/286 ,  G01N1/32 ,  G01R31/2808 ,  G01R31/2898 ,  G01R31/307 ,  G01R31/312 ,  H01J37/153 ,  H01J37/3005 ,  H01J2237/208 ,  H01J2237/24564 ,  H01J2237/2817 ,  H01J2237/31749 ,  H01L22/14 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Multiple planes within the sample are exposed from a single perspective for contact by an electrical probe. The sample can be milled at a non-orthogonal angle to expose different layers as sloped surfaces. The sloped edges of multiple, parallel conductor planes provide access to the multiple levels from above. The planes can be accessed, for example, for contacting with an electrical probe for applying or sensing a voltage. The level of an exposed layer to be contacted can be identified, for example, by counting down the exposed layers from the sample surface, since the non-orthogonal mill makes all layers visible from above. Alternatively, the sample can be milled orthogonally to the surface, and then tilted and/or rotated to provide access to multiple levels of the device. The milling is preferably performed away from the region of interest, to provide electrical access to the region while minimizing damage to the region.

    Abstract translation: 样品中的多个平面从单个视角暴露，用于通过电探针进行接触。 可以以非正交角度研磨样品以将不同层暴露为倾斜表面。 多个平行导体平面的倾斜边缘可以从上方访问多个层面。 例如，可以接触平面用于与用于施加或感测电压的电探针接触。 例如，通过从样品表面中倒下暴露的层，可以识别要接触的暴露层的水平，因为非正交研磨机使得所有层从上方可见。 或者，样品可以与表面正交碾磨，然后倾斜和/或旋转以提供对多层装置的访问。 研磨优选远离感兴趣区域进行，以提供对该区域的电接入，同时使对该区域的损害最小化。

    FIDUCIAL DESIGN FOR TILTED OR GLANCING MILL OPERATIONS WITH A CHARGED PARTICLE BEAM
    5.
    发明申请
    FIDUCIAL DESIGN FOR TILTED OR GLANCING MILL OPERATIONS WITH A CHARGED PARTICLE BEAM 审中-公开
    具有充电颗粒光束的倾斜或移动铣刀操作的设计

    公开(公告)号：WO2014106182A1

    公开(公告)日：2014-07-03

    申请号：PCT/US2013/078315

    申请日：2013-12-30

    Applicant: FEI COMPANY

    Inventor： STONE, Stacey ,  LEE, Sang Hoon ,  BLACKWOOD, Jeffrey ,  SCHMIDT, Michael ,  KIM, Hyun Hwa

    IPC: H01J37/317

    CPC classification number: H01J37/317 ,  H01J37/3056 ,  H01J2237/221 ,  H01J2237/226 ,  H01J2237/2814 ,  H01J2237/31745

    Abstract: A method for analyzing a sample with a charged particle beam including directing the beam toward the sample surface; milling the surface to expose a second surface in the sample in which the end of the second surface distal to ion source is milled to a greater depth relative to a reference depth than the end of the first surface proximal to ion source; directing the charged particle beam toward the second surface to form one or more images of the second surface; forming images of the cross sections of the multiple adjacent features of interest by detecting the interaction of the electron beam with the second surface; assembling the images of the cross section into a three-dimensional model of one or more of the features of interest. A method for forming an improved fiducial and determining the depth of an exposed feature in a nanoscale three-dimensional structure is presented.

    Abstract translation: 一种用于分析具有带电粒子束的样品的方法，包括将束朝向样品表面引导; 铣削表面以暴露样品中的第二表面，其中远离离子源的第二表面的端部相对于参考深度比距离离子源的第一表面的端部更深的深度; 将带电粒子束引向第二表面以形成第二表面的一个或多个图像; 通过检测电子束与第二表面的相互作用形成感兴趣的多个相邻特征的横截面的图像; 将横截面的图像组装成感兴趣的一个或多个特征的三维模型。 提出了一种用于形成改进的基准并确定纳米尺度三维结构中暴露特征的深度的方法。

    METHOD AND SYSTEM FOR REDUCING CURTAINING IN CHARGED PARTICLE BEAM SAMPLE PREPARATION
    6.
    发明申请
    METHOD AND SYSTEM FOR REDUCING CURTAINING IN CHARGED PARTICLE BEAM SAMPLE PREPARATION 审中-公开
    用于减少充电颗粒光束样品制备中的遮蔽的方法和系统

    公开(公告)号：WO2014055974A1

    公开(公告)日：2014-04-10

    申请号：PCT/US2013/063640

    申请日：2013-10-07

    Applicant: FEI COMPANY

    Inventor： SCHMIDT, Michael ,  KIM, Hyun Hwa ,  LEE, Sang Hoon ,  STONE, Stacey ,  BLACKWOOD, Jeffrey

    IPC: H01L21/66

    CPC classification number: G01N1/32 ,  G01N1/286 ,  H01J37/20 ,  H01J37/3053 ,  H01J2237/31745

    Abstract: A method and system for exposing a portion of a structure in a sample for observation in a charged particle beam system, including extracting a sample from a bulk sample; determining an orientation of the sample that reduces curtaining; mounting the sample to a holder in the charged particle beam system so that the holder orients the sample in an orientation that reduces curtaining when the sample is milled to expose the structure; exposing the structure by milling the sample in a direction that reduces curtaining; and imaging the structure.

    Abstract translation: 一种方法和系统，用于暴露用于在带电粒子束系统中观察的样品中的结构的一部分，包括从大量样品中提取样品; 确定减少绘制的样品的取向; 将样品安装到带电粒子束系统中的保持器上，使得保持器以样品取向使得当样品被研磨以暴露结构时减少绘制的取向; 通过在减少绘制的方向上研磨样品来暴露结构; 并对结构进行成像。

    DEPOSITING MATERIAL INTO HIGH ASPECT RATIO STRUCTURES
    8.
    发明公开
    DEPOSITING MATERIAL INTO HIGH ASPECT RATIO STRUCTURES 有权
    涂覆材料结构中的高宽比HIGH

    公开(公告)号：EP2939261A1

    公开(公告)日：2015-11-04

    申请号：EP13868669.6

    申请日：2013-12-30

    Applicant: FEI Company

    Inventor： LEE, Sang Hoon ,  BLACKWOOD, Jeffrey ,  STONE, Stacey

    IPC: H01L21/205

    CPC classification number: H01L21/2605 ,  C23C16/045 ,  C23C16/047 ,  H01L21/02115 ,  H01L21/02277 ,  H01L21/0243 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/28556 ,  H01L21/76879 ,  H01L21/76898

    Abstract: A method is provided, along with a corresponding apparatus, for filling a high aspect ratio hole without voids or for producing high aspect ratio structures without voids. A beam having a diameter smaller than the diameter of the hole is directed into the hole to induced deposition beginning in the center region of the hole bottom. After an elongated structure is formed in the hole by the beam-induced deposition, a beam can then be scanned in a pattern at least as large as the hole diameter to fill the remainder of the hole. The high aspect ratio hole can then be cross-sectioned using an ion beam for observation without creating artefacts. When electron-beam-induced deposition is used, the electrons preferably have a high energy to reach the bottom of the hole, and the beam has a low current, to reduce spurious deposition by beam tails.

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