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    Solid-state imaging device and manufacturing method of the same
    4.
    发明专利
    Solid-state imaging device and manufacturing method of the same 审中-公开
    固态成像装置及其制造方法

    公开(公告)号：JP2012146797A

    公开(公告)日：2012-08-02

    申请号：JP2011003502

    申请日：2011-01-11

    Applicant: Fujifilm Corp ,  富士フイルム株式会社

    Inventor： SUGAWARA KAZUFUMI ,  SAWADAISHI ARIHITO ,  UEBA RYOSUKE

    IPC: H01L27/14 ,  H04N5/369

    Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a solid-state imaging device which can inhibit increase in the number of manufacturing processes, sensitivity reduction due to voids and reduction in light utilization efficiency.SOLUTION: A manufacturing method of a solid-state imaging device including a photoelectric conversion part (PD) 2 formed in a silicon substrate 1, a color filter 7 formed above the PD 2, a microlens 8 formed above the color filter 7, and an optical waveguide part 9 formed between the microlens 8 and the PD 2 for guiding light condensed by the microlens 8 to the PD 2, comprises a step of forming the optical waveguide 9 including: a first step of forming, above the substrate 1, an insulation film 5 having a recess 5K above the PD 2; a second step of forming, on the insulation film 5, a high refractive material film 6 having a refractive index higher than that of the insulation film 5 and a recess 6K reaching inside the recess 5K above the PD 2; and a third step of forming, on the high refractive material film 6, the color filter 7 having a refractive index lower than that of the high refractive material film 6 and filling the recess 6K.

    Abstract translation: 要解决的问题：提供一种可以抑制制造工艺数量增加的固态成像装置的制造方法，由于空隙导致的灵敏度降低和光利用效率的降低。 解决方案：包括形成在硅衬底1中的光电转换部分（PD）2，形成在PD 2上方的滤色器7，形成在滤色器7上方的微透镜8的固态成像器件的制造方法 ，并且形成在微透镜8与PD2之间的光波导部分9，用于将由微透镜8聚光的光引导到PD2，包括形成光波导9的步骤，包括：在基板1上方形成第一步骤 ，在PD2上方具有凹部5K的绝缘膜5; 在绝缘膜5上形成折射率高于绝缘膜5的高折射率材料膜6和到达PD2上方的凹部5K内的凹部6K的第二步骤; 以及在高折射率材料膜6上形成折射率低于高折射率材料膜6的折射率并填充凹部6K的滤色器7的第三步骤。 版权所有（C）2012，JPO＆INPIT

    Method of manufacturing solid-state imaging device
    5.
    发明专利
    Method of manufacturing solid-state imaging device 审中-公开
    制造固态成像装置的方法

    公开(公告)号：JP2011114063A

    公开(公告)日：2011-06-09

    申请号：JP2009267362

    申请日：2009-11-25

    Applicant: Fujifilm Corp ,  富士フイルム株式会社

    Inventor： UEBA RYOSUKE

    IPC: H01L27/148

    Abstract: PROBLEM TO BE SOLVED: To provide an impurity layer, with a predetermined size and pattern. SOLUTION: A semiconductor substrate 11 is coated with a resist 42 having a thickness of ≥2 μm. The resist 42 is subjected to a first exposure, by using an exposure mask having a first stripe pattern (pattern of lateral stripes arranged at predetermined intervals). Thereafter, the resist 42 is subjected to a second exposure using an exposure mask having a second stripe pattern (pattern of longitudinal stripes arranged at predetermined intervals); by using a resist mask 55 obtained by double exposure, p-type ions are implanted; and inter-pixel separation areas 33 that separate pixels are thereby formed at a deep position in the semiconductor substrate 11. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提供具有预定尺寸和图案的杂质层。 解决方案：半导体衬底11涂覆有厚度≥2μm的抗蚀剂42。 通过使用具有第一条纹图案（以预定间隔布置的横向条纹图案）的曝光掩模，对抗蚀剂42进行第一曝光。 此后，使用具有第二条纹图案（以预定间隔布置的纵向条纹）的曝光掩模对抗蚀剂42进行第二曝光; 通过使用通过双重曝光获得的抗蚀剂掩模55，植入p型离子; 并且因此在半导体衬底11中的深位置处形成分离像素的像素间分离区域33.（C）2011，JPO＆INPIT

    Pattern forming method, method for manufacturing electronic device using the pattern forming method, and electronic device
    6.
    发明专利
    Pattern forming method, method for manufacturing electronic device using the pattern forming method, and electronic device 有权
    图案形成方法，使用图案形成方法制造电子装置的方法和电子装置

    公开(公告)号：JP2013033210A

    公开(公告)日：2013-02-14

    申请号：JP2012088485

    申请日：2012-04-09

    Applicant: Fujifilm Corp ,  富士フイルム株式会社

    Inventor： OTANI TADAHIRO ,  UEBA RYOSUKE

    IPC: G03F7/38 ,  C08F20/12 ,  C08F20/26 ,  G03F7/004 ,  G03F7/038 ,  H01L21/027

    CPC classification number: G03F7/203 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/22 ,  G03F7/325 ,  G03F7/38 ,  G03F7/40 ,  Y10T428/24802

    Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method by which a contact hole with good shaping property (a low degree of deformation) relating to a cross-sectional shape in the plane direction of a resist film can be formed, and to provide a method for manufacturing an electronic device using the above method, and an electronic device.SOLUTION: The pattern forming method includes steps of, in the following order: (1) forming a resist film on a substrate by using a (A) chemically amplified resist composition; (2) exposing the resist film to form a latent image of a line-and-space pattern; (3) subjecting the resist film to a first heating treatment; (4) forming a latent image of a second line-and-space pattern in a direction intersecting the direction of the lines in the first line-and-space latent image; (5) subjecting the resist film to a second heating treatment; (6) developing the resist film after the second heating treatment by using a developing solution containing an organic solvent. The method for manufacturing an electronic device includes the above pattern forming method, and thereby, the electronic device is obtained.

    Abstract translation: 要解决的问题：提供一种图案形成方法，通过该图案形成方法可以形成与抗蚀剂膜的平面方向上的横截面形状有关的具有良好成形性（低变形度）的接触孔，以及 提供一种使用上述方法制造电子装置的方法和一种电子装置。 解决方案：图案形成方法包括以下顺序：（1）通过使用（A）化学放大抗蚀剂组合物在基板上形成抗蚀剂膜; （2）使抗蚀剂膜曝光以形成线间距图案的潜像; （3）对抗蚀剂膜进行第一次加热处理; （4）在与第一线间距潜像中的线的方向交叉的方向上形成第二线间距图案的潜像; （5）对抗蚀剂膜进行第二次加热处理; （6）通过使用含有机溶剂的显影液在第二次加热处理后显影抗蚀剂膜。 电子装置的制造方法包括上述图案形成方法，从而获得电子装置。 版权所有（C）2013，JPO＆INPIT

    Pattern forming method, composition used for the method, method for manufacturing electronic device, and electronic device
    7.
    发明专利
    Pattern forming method, composition used for the method, method for manufacturing electronic device, and electronic device 有权
    图案形成方法，用于该方法的组合物，用于制造电子设备的方法和电子设备

    公开(公告)号：JP2013257435A

    公开(公告)日：2013-12-26

    申请号：JP2012133229

    申请日：2012-06-12

    Applicant: Fujifilm Corp ,  富士フイルム株式会社

    Inventor： YAMAMOTO KEI ,  UEBA RYOSUKE

    IPC: G03F7/40 ,  G03F7/038 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027

    CPC classification number: G03F7/0035 ,  G03F7/0397 ,  G03F7/325 ,  G03F7/405

    Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method by which a trench pattern or a hole pattern having an ultrafine width or hole diameter can be formed while generation of blob defects is sufficiently reduced, and to provide a composition used for the method, a method for manufacturing an electronic device, and an electronic device.SOLUTION: A pattern forming method includes: a step of forming a first film by using an actinic ray-sensitive or radiation-sensitive resin composition (I), which contains a resin (A) showing an increase in the polarity by an action of an acid to decrease the solubility with a developing solution containing an organic solvent, and a compound (B) generating an acid by irradiation with actinic rays or radiation, and exposing and developing the first film to form a negative pattern; and a step of forming a second film on the negative pattern by using a composition (II), which contains a compound (A') showing an increase in the polarity by an action of an acid to decrease the solubility with a removing solution containing an organic solvent, and removing a region where an acid generating from the compound (B) does not react with the compound (A'), by using a removing solution.

    Abstract translation: 要解决的问题：提供一种图案形成方法，通过该图案形成方法可以形成具有超细宽度或孔直径的沟槽图案或孔图案，同时充分减少斑点缺陷的产生，并提供用于该方法的组合物 电子器件的制造方法和电子器件。解决方案：图案形成方法包括：通过使用含有树脂（A）的光化射线敏感性或辐射敏感性树脂组合物（I）形成第一膜的步骤 ）通过酸的作用显示极性的增加，以降低与含有有机溶剂的显影溶液的溶解度，以及通过用光化射线或辐射照射产生酸的化合物（B），以及曝光和显影第一膜 形成负面图案; 以及通过使用组合物（II）在负图案上形成第二膜的步骤，其包含通过酸的作用显示极性增加的化合物（A'），以降低与含有 通过使用除去溶液除去由化合物（B）产生的酸与化合物（A'）不反应的区域。

    Pattern formation method, electronic device manufacturing method using the same, and electronic device
    8.
    发明专利
    Pattern formation method, electronic device manufacturing method using the same, and electronic device 有权
    图案形成方法，使用其的电子设备制造方法和电子设备

    公开(公告)号：JP2013004820A

    公开(公告)日：2013-01-07

    申请号：JP2011135777

    申请日：2011-06-17

    Applicant: Fujifilm Corp ,  富士フイルム株式会社

    Inventor： UEBA RYOSUKE

    IPC: H01L21/027 ,  G03F7/038 ,  G03F7/039 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40

    CPC classification number: H05K3/0023 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/0757 ,  G03F7/11 ,  G03F7/203 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/70466 ,  H01L21/0274 ,  Y10T428/24273

    Abstract: PROBLEM TO BE SOLVED: To provide a pattern formation method which can form a plurality of hole patterns on a substrate in an extremely fine pitch (80 nm or less, for example) excellently and easily, an electronic device manufacturing method using the pattern formation method, and an electronic device.SOLUTION: The pattern formation method which is used to form a plurality of hole patterns on a substrate includes a pattern formation process including the following steps (1) through (6) two or more times in that order: step (1) of forming a resist film consisting of a chemical amplification type resist composition on the substrate; step (2) of exposing the resist film to light to form a first latent line-and-space image; step (3) of exposing the resist film to light to form a second latent line-and-space image so as to intersect a line direction in the first latent line-and-space image; step (4) of developing the resist film having the first and the second images formed thereon with an organic solvent to form a group of hole patterns; step (5) of etching the substrate to form the group of hole patterns; and step (6) of removing the resist film.

    Abstract translation: 要解决的问题：为了提供一种图案形成方法，其能够以非常细的间距（例如，80nm以下）优异地且容易地在基板上形成多个孔图案，使用该 图案形成方法和电子设备。 解决方案：用于在基板上形成多个孔图形的图案形成方法包括以下步骤包括以下步骤（1）至（6）两次或更多次的图案形成处理：步骤（1） 在所述基板上形成由化学放大型抗蚀剂组合物构成的抗蚀剂膜; 步骤（2）将抗蚀剂膜曝光以形成第一潜线空间图像; 将所述抗蚀剂膜曝光以形成第二潜线空间图像以与所述第一潜线空间图像中的线方向相交的步骤（3）; 步骤（4）使用有机溶剂在其上形成有第一和第二图像的抗蚀剂膜显影以形成一组孔图案; 步骤（5），蚀刻所述衬底以形成所述孔图案组; 以及去除抗蚀剂膜的步骤（6）。 版权所有（C）2013，JPO＆INPIT

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