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    PATTERN FORMING METHOD AND RESIST COMPOSITION
    2.
    发明专利
    PATTERN FORMING METHOD AND RESIST COMPOSITION 未知

    公开(公告)号：SG186712A1

    公开(公告)日：2013-02-28

    申请号：SG2012091492

    申请日：2011-02-24

    Applicant: FUJIFILM CORP

    Inventor： IWATO KAORU ,  KATAOKA SHOHEI ,  TARUTANI SHINJI ,  KAMIMURA SOU ,  KATO KEITA ,  ENOMOTO YUICHIRO ,  MIZUTANI KAZUYOSHI ,  TSUCHIHASHI TORU ,  FUJII KANA

    Abstract: Provided is a method of forming a pattern, ensuring excellent sensitivity, limiting resolving power, roughness characteristic, exposure latitude (EL), dependence on post-exposure bake (PEB) temperature and focus latitude (depth of focus DOF), and a resist composition for use in the method. The method comprises (A) forming a film from a resist composition comprising a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, which resin thus when acted on by an acid decreases its solubility in a developer containing an organic solvent, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent.

    PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM
    4.
    发明专利
    PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM 未知

    公开(公告)号：SG182354A1

    公开(公告)日：2012-08-30

    申请号：SG2012049441

    申请日：2011-01-07

    Applicant: FUJIFILM CORP

    Inventor： ENOMOTO YUICHIRO ,  TARUTANI SHINJI ,  KAMIMURA SOU ,  IWATO KAORU ,  KATO KEITA ,  SHIBUYA AKINORI

    Abstract: Provided is a pattern forming method comprising (i) a step of forming a film from an actinic ray-sensitive or radiation-sensitive resin composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the actinic ray-sensitive or radiation-sensitive resin composition comprises (A) a resin capable of decreasing the solubility for an organic solvent-containing developer by the action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (D) a solvent, and (G) a compound having at least either one of a fluorine atom and a silicon atom and having basicity or being capable of increasing the basicity by the action of an acid.

    NEGATIVE PATTERN FORMING METHOD AND RESIST PATTERN
    6.
    发明专利
    NEGATIVE PATTERN FORMING METHOD AND RESIST PATTERN 未知

    公开(公告)号：SG190734A1

    公开(公告)日：2013-07-31

    申请号：SG2013041884

    申请日：2011-11-29

    Applicant: FUJIFILM CORP

    Inventor： KATO KEITA ,  FUJII KANA ,  KAMIMURA SOU ,  IWATO KAORU

    Abstract: A negative pattern forming method, includes: (i) forming a film having a film thickness of 200 nm or more from a chemical amplification resist composition containing (A) a resin capable of increasing a polarity of the resin (A) by an action of an acid to decrease a solubility of the resin (A) for a developer containing one or more organic solvents, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film with a developer containing one or more organic solvents.

    PATTERN FORMING METHOD AND RESIST COMPOSITION
    7.
    发明专利
    PATTERN FORMING METHOD AND RESIST COMPOSITION 未知

    公开(公告)号：SG183808A1

    公开(公告)日：2012-10-30

    申请号：SG2012061438

    申请日：2011-03-25

    Applicant: FUJIFILM CORP

    Inventor： KATO KEITA ,  TARUTANI SHINJI ,  TSUCHIHASHI TORU ,  KAMIMURA SOU ,  ENOMOTO YUICHIRO ,  FUJII KANA ,  IWATO KAORU ,  KATAOKA SHOHEI ,  MIZUTANI KAZUYOSHI

    Abstract: Provided is a method of forming a pattern, ensuring excellent exposure latitude (EL) and focus latitude (depth of focus DOF). The method of forming a pattern includes (A) forming a film from a resist composition, the resist composition, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent, thereby forming a negative pattern. The resist composition contains (a) a resin that is configured to decompose when acted on by an acid and &Dgr;SP thereof represented by formula (1) below is 2.5 (MPa)1/2 or above, (b) a compound that is composed to generate an acid when exposed to actinic rays or radiation, and (c) a solvent. &Dgr;SP=SPF-SPI •••(1)

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