2.
    发明专利
    未知

    公开(公告)号:FI20050767A

    公开(公告)日:2005-09-16

    申请号:FI20050767

    申请日:2005-07-19

    Applicant: FUJIKURA LTD

    Abstract: At least one base material having a wiring circuit that has been formed into a predetermined outer shape is bonded to a motherboard. The motherboard wiring board and the base material having a wiring circuit are electrically connected to each other at least one portion through an inner via hole. The outer shape of the base material having a wiring circuit is smaller than the outer shape of the motherboard, with the base material having a wiring circuit having an island shape on the motherboard.

    4.
    发明专利
    未知

    公开(公告)号:FI122414B

    公开(公告)日:2012-01-13

    申请号:FI20050767

    申请日:2005-07-19

    Applicant: FUJIKURA LTD

    Abstract: At least one base material having a wiring circuit that has been formed into a predetermined outer shape is bonded to a motherboard. The motherboard wiring board and the base material having a wiring circuit are electrically connected to each other at least one portion through an inner via hole. The outer shape of the base material having a wiring circuit is smaller than the outer shape of the motherboard, with the base material having a wiring circuit having an island shape on the motherboard.

    5.
    发明专利
    未知

    公开(公告)号:DE69201849D1

    公开(公告)日:1995-05-04

    申请号:DE69201849

    申请日:1992-10-08

    Applicant: FUJIKURA LTD

    Abstract: A mixture of titanium dioxide and an oxide or carbonate of barium includes one or more transition metal elements selected from the group of V, Cr, Mn, Fe, Co, Ni and Cu, in the amount of 2 ppm or more. This mixture is used as a starting material. The mixture is heated to a predetermined temperature to make a melt (2). Then, a seed crystal (7) of BaTiO is brought into contact with the melt under an environment with a low oxygen partial pressure of 0.02 atm. or less. From this state, the above melt is slowly cooled to grow a single crystal on the seed crystal. The thus obtained single crystal is heated in a temperature of 600 DEG C or more, under an oxidizing environment with its oxygen partial pressure more than 0.1 atm.

    Process for Preparing Barium Titanate Single Crystals

    公开(公告)号:CA2079936A1

    公开(公告)日:1993-04-09

    申请号:CA2079936

    申请日:1992-10-06

    Applicant: FUJIKURA LTD

    Abstract: A mixture of titanium dioxide and an oxide or carbonate of barium includes one or more transition metal elements selected from the group of V, Cr, Mn, Fe, Co, Ni and Cu, in the amount of 2 ppm or more. This mixture is used as a starting material. The mixture is heated to a predetermined temperature to make a melt (2). Then, a seed crystal (7) of BaTiO is brought into contact with the melt under an environment with a low oxygen partial pressure of 0.02 atm. or less. From this state, the above melt is slowly cooled to grow a single crystal on the seed crystal. The thus obtained single crystal is heated in a temperature of 600 DEG C or more, under an oxidizing environment with its oxygen partial pressure more than 0.1 atm.

    7.
    发明专利
    未知

    公开(公告)号:DE69201849T2

    公开(公告)日:1995-10-12

    申请号:DE69201849

    申请日:1992-10-08

    Applicant: FUJIKURA LTD

    Abstract: A mixture of titanium dioxide and an oxide or carbonate of barium includes one or more transition metal elements selected from the group of V, Cr, Mn, Fe, Co, Ni and Cu, in the amount of 2 ppm or more. This mixture is used as a starting material. The mixture is heated to a predetermined temperature to make a melt (2). Then, a seed crystal (7) of BaTiO is brought into contact with the melt under an environment with a low oxygen partial pressure of 0.02 atm. or less. From this state, the above melt is slowly cooled to grow a single crystal on the seed crystal. The thus obtained single crystal is heated in a temperature of 600 DEG C or more, under an oxidizing environment with its oxygen partial pressure more than 0.1 atm.

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