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公开(公告)号:JP2001118813A
公开(公告)日:2001-04-27
申请号:JP30089099
申请日:1999-10-22
Applicant: IBM
Inventor: BRASTA BRUSICK , EDELSTEIN DANIEL C , PAUL M FENII , WILLIAM GUTHRIE , MARK JASO , FRANK B KAUFFMANN , NAFUTARI RASUTEIGU , PETER LAUPER , RODBELL KENNETH , DAVID B THOMPSON
Abstract: PROBLEM TO BE SOLVED: To speedily eliminate copper and to minimize the loss of copper in a patterned interconnected body without eliminating a metal layer and a dielectric layer at a lower side or corroding copper. SOLUTION: The chemical - mechanical polishing(CMP) slurry for polishing the layer of copper or that of the alloy of copper contains an etchant, an oxidation suppression agent, and an additive for adjusting the complexing between the copper and the oxidation suppression agent.
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公开(公告)号:SG99289A1
公开(公告)日:2003-10-27
申请号:SG1999004765
申请日:1999-09-22
Applicant: IBM
Inventor: VLASTA A BRUSIC , DANIEL CHARLES EDELSTEIN , PAUL M FENNEY , WILLIAM GUTHRIE , MARK JASO , FRANK B KAUFMAN , NAFTALI LUSTIG , PETER ROPER , KENNETH RODBELL , DAVID B THOMPSON
IPC: C09G1/02 , C09K13/04 , B24C11/00 , C23F3/00 , H01L21/321
Abstract: Copper or a copper alloy is removed by chemical-mechanical planarisation (CMP) in a slurry of an oxidizer, an oxidation inhibitor, and an additive that appreciably regulates copper complexing with the oxidation inhibitor.
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