公开(公告)号：JPH03122124A

公开(公告)日：1991-05-24

申请号：JP22143890

申请日：1990-08-24

Applicant: IBM

Inventor： JIEIMUZU RAPUTON HEDORITSUKU J ,  DONARUDO KURIFUOODO HOUFUAA ,  JIEFURII UIRIAMU RABADEII ,  SARII AN SUUONSON ,  BUIRI FUORUKUZEN

IPC: C08G73/06 ,  C08G73/10

公开(公告)号：JPH05205526A

公开(公告)日：1993-08-13

申请号：JP20784592

申请日：1992-08-04

Applicant: IBM

Inventor： JIEIMUZU RAPUTON HEDORITSUKU ,  DONARUDO KURIFUOODO HOUFUAA ,  JIEFURII UIRIAMU RABADEII ,  ROBAATO BURUUSU PURAIMU ,  TOMASU POORU RATSUSERU

IPC: C08J9/02 ,  C08J9/26 ,  H01B3/30

Abstract: PURPOSE: To provide a foaming polymer which is used as a dielectric material and whose hole diameter is smaller than 1000 Å, and a manufacturing method therefor. CONSTITUTION: This foaming polymer is manufactured by the following process; (a) to generate a copolymer of a matrix polymer and a thermally decomposable polymer thermally decomposed at a temperature lower a decomposing temperature of the matrix polymer and (b) to generate a foaming polymer by heating the colpolymer to a decomposing temperature of the thermally decomposable polymer or a temperature not less than it and a temperature lower than a decomposing temperature of the matrix polymer.

公开(公告)号：JPH07312331A

公开(公告)日：1995-11-28

申请号：JP27595393

申请日：1993-10-08

Applicant: IBM

Inventor： GUREGORII BUREITA ,  NIKORASU JIEFURIIZU KUREKATSUK ,  UIRIAMU DAINAN HINSUBAAGU SAAD ,  DONARUDO KURIFUOODO HOUFUAA ,  HIROSHI ITOU ,  SUKOTSUTO AASAA MAKUDONARUDO ,  RATSUTOMAN SURIJIYAKUMARAN

IPC: G03F1/08 ,  G03F7/004 ,  G03F7/039 ,  G03F7/16 ,  G03F7/38 ,  H01L21/027 ,  H01L21/47

Abstract: PURPOSE: To improve the lithographic image developing process for manufacturing an integrated circuit and obtain a process for protecting a photoresist film from chemical contaminants in air. CONSTITUTION: The process for forming a photoresist image on a substrate comprises coating the substrate with a polymer film composed of a vinyl polymer, photosensitive acid producer and acid unstable group, heating the film at a temp. higher about 20 deg.C than the glass transition temp. of the polymer and lower than the tearing temp. of the acid unstable group, exposing the film to a radiation, heating the film over 110 deg.C and develop the image. Combination of the heating steps before and after exposure protects the film from the chemical contaminants in air during the resist image producing process, thereby obtaining a high-resolution and high-contrast developed image.

公开(公告)号：JPH02147676A

公开(公告)日：1990-06-06

申请号：JP6404789

申请日：1989-03-17

Applicant: IBM

Inventor： RICHIYAADO DANIERU DEIRAA ,  ANSONII FURANSHISU AANORUDO ,  ININ CHIYON ,  PATORISHIA METSUTSUGAA KOTSUTS ,  DONARUDO KURIFUOODO HOUFUAA ,  MAHAMOUDO EMU HOOJIYASUTEE ,  ERUUTSUDO HAABAATO MATSUKII ,  PURABODOO RAMUNIKURARU SHIYAA ,  BUIRI FUORUKUZEN

IPC: C09D179/08 ,  B05D5/12 ,  C08G73/10 ,  C08L79/08