公开(公告)号：JPH07312331A

公开(公告)日：1995-11-28

申请号：JP27595393

申请日：1993-10-08

Applicant: IBM

Inventor： GUREGORII BUREITA ,  NIKORASU JIEFURIIZU KUREKATSUK ,  UIRIAMU DAINAN HINSUBAAGU SAAD ,  DONARUDO KURIFUOODO HOUFUAA ,  HIROSHI ITOU ,  SUKOTSUTO AASAA MAKUDONARUDO ,  RATSUTOMAN SURIJIYAKUMARAN

IPC: G03F1/08 ,  G03F7/004 ,  G03F7/039 ,  G03F7/16 ,  G03F7/38 ,  H01L21/027 ,  H01L21/47

Abstract: PURPOSE: To improve the lithographic image developing process for manufacturing an integrated circuit and obtain a process for protecting a photoresist film from chemical contaminants in air. CONSTITUTION: The process for forming a photoresist image on a substrate comprises coating the substrate with a polymer film composed of a vinyl polymer, photosensitive acid producer and acid unstable group, heating the film at a temp. higher about 20 deg.C than the glass transition temp. of the polymer and lower than the tearing temp. of the acid unstable group, exposing the film to a radiation, heating the film over 110 deg.C and develop the image. Combination of the heating steps before and after exposure protects the film from the chemical contaminants in air during the resist image producing process, thereby obtaining a high-resolution and high-contrast developed image.

公开(公告)号：JPS61189639A

公开(公告)日：1986-08-23

申请号：JP29341585

申请日：1985-12-27

Applicant: IBM

Inventor： ANDERUSU HARUTO ,  HIROSHI ITOU ,  SUKOTSUTO AASAA MAKUDONARUDO ,  KAARUTON GURANTO UIRUSON

IPC: H01L21/30 ,  G03F7/20 ,  G03F7/26 ,  G03F7/38 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065

公开(公告)号：JPS59216142A

公开(公告)日：1984-12-06

申请号：JP2014184

申请日：1984-02-08

Applicant: Ibm

Inventor： KAARUTON GURANTO UIRUSON ,  HIROSHI ITOU

IPC: G03F7/09 ,  G03F1/68 ,  G03F7/039 ,  H01L21/027 ,  G03C5/00 ,  G03C1/71 ,  G03F1/00 ,  H01L21/30

CPC classification number: G03F7/039 ,  G03F1/50

公开(公告)号：JPH04238693A

公开(公告)日：1992-08-26

申请号：JP13162491

申请日：1991-05-08

Applicant: IBM

Inventor： MAATEIN JIYOZEFU GOORUDOBAAGU ,  HIROSHI ITOU ,  KARORAIN AN KOBATSUKU ,  MAIKURU JIYON PAAMAA ,  ROJIYAA ARAN PORAKU ,  PEIJI ADAMUZU PUA

IPC: B23K1/00 ,  B23K35/22 ,  B23K35/34 ,  B23K101/40 ,  H05K3/10 ,  H05K3/34

Abstract: PURPOSE: To provide a chemical soldering technique with which a good metallurgical effect is obtained using low temperature and metal is formed upon heating. CONSTITUTION: A chemical solder composition including an organometallic which thermally degrades to a metal and volatile compounds and a polymeric matrix that decomposes to volatile fractions leaving only the metal, both within a predetermined temperature range, is selected and the bonding method utilizing it is comprised.

公开(公告)号：JPS60241225A

公开(公告)日：1985-11-30

申请号：JP2214285

申请日：1985-02-08

Applicant: IBM

Inventor： HIROSHI ITOU ,  SUKOTSUTO AASAA MAKUDONARUDO ,  ROBAATO DENISU MIRAA ,  KAARUTON GURANTO UIRUSON

IPC: G03F7/30 ,  G03F7/038 ,  G03F7/039 ,  G03F7/26 ,  G03F7/36 ,  G03F7/38 ,  H01L21/027

公开(公告)号：JPH0680613A

公开(公告)日：1994-03-22

申请号：JP819693

申请日：1993-01-21

Applicant: IBM

Inventor： GUREGORII BUREITA ,  DANIERU JIYOZEFU DOOSON ,  MAAMUUDO MOSUTAFUA KOOJIYASUTE ,  RANII WAIIRIN KUUON ,  ERUUTSUDO HAABAATO MEISHII ,  DEIBITSUDO POORU MERITSUTO ,  UEIN MAATEIN MOROO ,  SUTANREE YUUJIIN PEROO ,  HAABANZU SHINGU SAKUDEBU ,  ROBAATO RABIN UTSUDO ,  HIROSHI ITOU

IPC: B01J31/02 ,  C07B61/00 ,  C07C68/06 ,  C07C69/96 ,  C08F8/00 ,  C08F12/24 ,  C08G8/28

公开(公告)号：JPH03185449A

公开(公告)日：1991-08-13

申请号：JP22143790

申请日：1990-08-24

Applicant: IBM

Inventor： HIROSHI ITOU

IPC: G03F7/029 ,  C08L61/04 ,  G03F7/004 ,  G03F7/038 ,  H01L21/027

Abstract: PURPOSE: To enable development with an aq. base soln. by using phenolic resin, a radiation chemical acid generating agent and a specified low molecular material. CONSTITUTION: Phenolic resin is mixed with a radiation chemical acid generating agent and a low molecular material to obtain the objective negative type resist compsn. The low molecular material reacts with the phenolic resin and reduces the solution velocity in an aq. base soln. when the compsn. is irradiated and post-cured. The pref. low molecular material is a monomer such as an amide, aldehyde or imide. The pref. phenolic resin is polyphenol but other phenolic resin such as novolak may be used. The resin is required to transmit radiation used. The resultant resist compsn. can be developed with the aq. base soln., has high dry etching resistance and high photosensitivity and can ensure high resolution.

公开(公告)号：JPH0217643A

公开(公告)日：1990-01-22

申请号：JP9904789

申请日：1989-04-20

Applicant: IBM

Inventor： HIROSHI ITOU ,  MOHAMEDO TOUFUITSUKU KURONBII ,  RODONII EDOGAA RII

IPC: H01L21/3205 ,  C23C14/04 ,  G03F7/09 ,  G11B5/127 ,  G11B5/187

Abstract: PURPOSE: To easily execute clear lifting off without fencing by giving radiation on a substrate to which prescribed coating is executed through a mask, adhering conductor metal after development and lifting it off by solvent. CONSTITUTION: Poly methyl glutamyl imide(PMGI) whose average molecular weight is within the range of 3000-4000 is used and the PMGI layer 2 is coated. Then, the substrate 1 to which photoresist 3 is overcoated is irradiated with radiation through the mask. When resist 3 and PMGI 2 are developed, structure having the under cut of PMGI 2 remains under resist 3. Then, conductor metal 4 is adhered by sputtering, for example, and the coating of adhered metal 4 is formed on the substrate 1 and resist 3. Then, lift-off is executed by using organic solvent or alkali aqueous solution, for example. Consequently, the substrate is selectively coated without the problem of fencing.