公开(公告)号：JPH09179302A

公开(公告)日：1997-07-11

申请号：JP28542596

申请日：1996-10-28

Applicant: IBM

Inventor： GUREGORII BUREITA ,  RICHIYAADO ANSONII DEIPIETORO ,  DONARUDO KURIFUOODO HOOFUAA ,  HIROSHI ITOO

IPC: G03F7/004 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To obtain an improved chemical amplification type resist compsn. for use in the production of a semiconductor device by incorporating iodonium sulfonate as a radiation sensitive acid generating agent, a polymer and an acid labile compd. having a substituent cleavable by an acid. SOLUTION: This compsn. is a radiation sensitive resist compsn. contg. iodonium sulfonate as a radiation sensitive acid generating agent, a polymer and an acid labile compd. It is preferable that the acid generating compd. has been chemically bonded to the polymer. The acid labile compd. varies its polarity when exposed to an acid and produces difference in solubility and it is preferably a compd. having an ester group cleavable by an acid. This compsn. has satisfactory solubility and adhesiveness, high sensitivity to lithography and high contrast, can be developed with a solvent and is useful for producing an IC chip in the production of a semiconductor device.

公开(公告)号：JPH0680613A

公开(公告)日：1994-03-22

申请号：JP819693

申请日：1993-01-21

Applicant: IBM

Inventor： GUREGORII BUREITA ,  DANIERU JIYOZEFU DOOSON ,  MAAMUUDO MOSUTAFUA KOOJIYASUTE ,  RANII WAIIRIN KUUON ,  ERUUTSUDO HAABAATO MEISHII ,  DEIBITSUDO POORU MERITSUTO ,  UEIN MAATEIN MOROO ,  SUTANREE YUUJIIN PEROO ,  HAABANZU SHINGU SAKUDEBU ,  ROBAATO RABIN UTSUDO ,  HIROSHI ITOU

IPC: B01J31/02 ,  C07B61/00 ,  C07C68/06 ,  C07C69/96 ,  C08F8/00 ,  C08F12/24 ,  C08G8/28

公开(公告)号：JPH07312331A

公开(公告)日：1995-11-28

申请号：JP27595393

申请日：1993-10-08

Applicant: IBM

Inventor： GUREGORII BUREITA ,  NIKORASU JIEFURIIZU KUREKATSUK ,  UIRIAMU DAINAN HINSUBAAGU SAAD ,  DONARUDO KURIFUOODO HOUFUAA ,  HIROSHI ITOU ,  SUKOTSUTO AASAA MAKUDONARUDO ,  RATSUTOMAN SURIJIYAKUMARAN

IPC: G03F1/08 ,  G03F7/004 ,  G03F7/039 ,  G03F7/16 ,  G03F7/38 ,  H01L21/027 ,  H01L21/47

Abstract: PURPOSE: To improve the lithographic image developing process for manufacturing an integrated circuit and obtain a process for protecting a photoresist film from chemical contaminants in air. CONSTITUTION: The process for forming a photoresist image on a substrate comprises coating the substrate with a polymer film composed of a vinyl polymer, photosensitive acid producer and acid unstable group, heating the film at a temp. higher about 20 deg.C than the glass transition temp. of the polymer and lower than the tearing temp. of the acid unstable group, exposing the film to a radiation, heating the film over 110 deg.C and develop the image. Combination of the heating steps before and after exposure protects the film from the chemical contaminants in air during the resist image producing process, thereby obtaining a high-resolution and high-contrast developed image.

公开(公告)号：JPH06266112A

公开(公告)日：1994-09-22

申请号：JP26684493

申请日：1993-10-26

Applicant: IBM

Inventor： GUREGORII BUREITA ,  KURISUTOFUAA JIYON NOAZU ,  ITO HIROSHI ,  RATONAMU SUURIYAKUMARAN

IPC: G03F7/004 ,  G03F7/039 ,  H01L21/30

Abstract: PURPOSE: To obtain a chemically sensitized photoresist compsn. having high heat stability and sensitive to an acid. CONSTITUTION: This photoresist compsn. contains a photosensitive acid generating body and a polymer contg. a reactional product of hydroxystyrene with an acrylate, a methacrylate or a mixture of them, has improved heat stability and is almost independent of pollutants in air.