2.
    发明专利
    未知

    公开(公告)号:DE3878751T2

    公开(公告)日:1993-09-23

    申请号:DE3878751

    申请日:1988-05-03

    Applicant: IBM

    Abstract: This system employs writing of lithographic patterns with a shaped electron beam exposure system (10) which minimizes the time wasted by workpiece positional requirements. The writing field contains an array of sub-fields written in a raster sequence. The large width of the writing field (37) provided by the VAIL system reduces the number of mechanical scans required to write the pattern on the workpiece which further reduces the time required for workpiece positioning. When patterns are being superimposed over previously written patterns, registration is employed. This system includes a registration field (36) confined to local areas on the workpiece (7), which is larger than the writing field, without requiring change in focus and without requiring the mechanical system comprising the X-Y work table to change speed during the registration and reregistration of the various fields on a semiconductor wafer or mask. The registration field can be larger than the writing field, because the quality requirements demanded from the shaped electron beam(B) are less for detecting the locations of such registration (39) marks at the various locations on the wafer.

    3.
    发明专利
    未知

    公开(公告)号:DE3878751D1

    公开(公告)日:1993-04-08

    申请号:DE3878751

    申请日:1988-05-03

    Applicant: IBM

    Abstract: This system employs writing of lithographic patterns with a shaped electron beam exposure system (10) which minimizes the time wasted by workpiece positional requirements. The writing field contains an array of sub-fields written in a raster sequence. The large width of the writing field (37) provided by the VAIL system reduces the number of mechanical scans required to write the pattern on the workpiece which further reduces the time required for workpiece positioning. When patterns are being superimposed over previously written patterns, registration is employed. This system includes a registration field (36) confined to local areas on the workpiece (7), which is larger than the writing field, without requiring change in focus and without requiring the mechanical system comprising the X-Y work table to change speed during the registration and reregistration of the various fields on a semiconductor wafer or mask. The registration field can be larger than the writing field, because the quality requirements demanded from the shaped electron beam(B) are less for detecting the locations of such registration (39) marks at the various locations on the wafer.

    5.
    发明专利
    未知

    公开(公告)号:DE2731142A1

    公开(公告)日:1978-01-19

    申请号:DE2731142

    申请日:1977-07-09

    Applicant: IBM

    Abstract: A square shaped beam of charged particles is passed over a registration mark in the surface of a semiconductor wafer. A signal produced by a diode detector that is responsive to backscattered electrons will peak when the beam passes over each of the edges of the registration mark. The signal is differentiated; and the resultant signal is filtered and amplified to provide information regarding the position of the beam with respect to the wafer. If more than one diode detector is used, the signals are added just before or just after the differentiation.

    7.
    发明专利
    未知

    公开(公告)号:DE69023030T2

    公开(公告)日:1996-05-30

    申请号:DE69023030

    申请日:1990-02-20

    Applicant: IBM

    Abstract: A three-stage E-beam deflection system employs breaking the entire field to be scanned into clusters and sub-fields. The scanning provided by the first stage of deflection which scans within the entire field is rectilinear and discontinuous with the scan stopping in the center of each of the clusters where an exposure is to be made, and scanning is the same within each cluster from sub-field to sub-field. The scanning within a cluster by the second stage stops in the center of each sub-field where exposure is to be made. The third stage uses high speed electrostatic deflection to provide scanning with a vector scanning mode within the sub-field being scanned.

    8.
    发明专利
    未知

    公开(公告)号:DE69023030D1

    公开(公告)日:1995-11-23

    申请号:DE69023030

    申请日:1990-02-20

    Applicant: IBM

    Abstract: A three-stage E-beam deflection system employs breaking the entire field to be scanned into clusters and sub-fields. The scanning provided by the first stage of deflection which scans within the entire field is rectilinear and discontinuous with the scan stopping in the center of each of the clusters where an exposure is to be made, and scanning is the same within each cluster from sub-field to sub-field. The scanning within a cluster by the second stage stops in the center of each sub-field where exposure is to be made. The third stage uses high speed electrostatic deflection to provide scanning with a vector scanning mode within the sub-field being scanned.

    SERVO LOOP SYSTEM
    9.
    发明专利

    公开(公告)号:DE3367290D1

    公开(公告)日:1986-12-04

    申请号:DE3367290

    申请日:1983-01-14

    Applicant: IBM

    Abstract: An X-Y positioning system for electron beam lithography employs an adaptive drive system for feedback control. A gradually increasing drive voltage, superimposed upon a step wave, is summed with the position error signal to achieve position within the system deadband zone. The drive voltage, while superimposed upon the error voltage, increases until mechanical friction and drift in the deadband zone are overcome. A function generator alters the error signal such that the combined error signal and drive voltage cause the system to approach the null point minimizing servo oscillations. A limit circuit determines when the system has reached a set of inner limits and generates an operative output signal to the signal controller which continues until the position exceeds a second, outer set of limits.

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