公开(公告)号：JPH1154454A

公开(公告)日：1999-02-26

申请号：JP19988497

申请日：1997-07-25

Applicant: IBM

Inventor： CABRAL JR CYRIL ,  LAWRENCE ALFRED CLEVENGER ,  FRANCOIS MAXDOLE ,  HARPER JAMES M E ,  MANN RANDY W ,  GLENN LESTER MILES ,  NAKOS JAMES S ,  RONEN ANDREW ROY ,  CATHERINE L SAENGER

IPC: C22C14/00 ,  C30B3/00 ,  H01L21/28

Abstract: PROBLEM TO BE SOLVED: To provide an improved method for forming a C54 phase titanium silicide without requiring a second high-temperature annealing. SOLUTION: A low resistivity titanium silicide and semiconductor devices incorporating the same are formed by a titanium alloy comprising titanium and 1-20 atom percent refractory metal deposited in a layer overlying a silicon substrate. The substrate is then heated to a temperature which is sufficient to practically form a C54 phase titanium silicide. The titanium alloy may further comprise silicon and the refractory metal may be Mo, W, Ta, Nb, V, or Cr, but more preferably be Ta or Nb. The heating step used to form the low resistivity titanium silicide is performed at a temperature less than 900 deg.C, and more preferably between about 600 to 700 deg.C.