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公开(公告)号:JPH1154454A
公开(公告)日:1999-02-26
申请号:JP19988497
申请日:1997-07-25
Applicant: IBM
Inventor: CABRAL JR CYRIL , LAWRENCE ALFRED CLEVENGER , FRANCOIS MAXDOLE , HARPER JAMES M E , MANN RANDY W , GLENN LESTER MILES , NAKOS JAMES S , RONEN ANDREW ROY , CATHERINE L SAENGER
Abstract: PROBLEM TO BE SOLVED: To provide an improved method for forming a C54 phase titanium silicide without requiring a second high-temperature annealing. SOLUTION: A low resistivity titanium silicide and semiconductor devices incorporating the same are formed by a titanium alloy comprising titanium and 1-20 atom percent refractory metal deposited in a layer overlying a silicon substrate. The substrate is then heated to a temperature which is sufficient to practically form a C54 phase titanium silicide. The titanium alloy may further comprise silicon and the refractory metal may be Mo, W, Ta, Nb, V, or Cr, but more preferably be Ta or Nb. The heating step used to form the low resistivity titanium silicide is performed at a temperature less than 900 deg.C, and more preferably between about 600 to 700 deg.C.
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公开(公告)号:JP2003249137A
公开(公告)日:2003-09-05
申请号:JP2002330991
申请日:2002-11-14
Applicant: IBM
Inventor: GREENBERG DAVID R , DELIGIANNI HARIKLIA , ROBERT A GROVES , CHRISTOPHER V JARNES , LUND JENNIFER L , CATHERINE L SAENGER , VOLANT RICHARD P
Abstract: PROBLEM TO BE SOLVED: To provide a fine electric mechanical switch having a restoring force large enough to overcome static friction. SOLUTION: This fine electric mechanical switch comprises a conductive beam 10 capable of being warped, and a plurality of electrodes which are covered with elastically deformable conductive layers 11. At first, a restoring force is generated by a single spring constant k0 of the beam 10 by applying a control voltage between the beam 10 capable of being warped and a control electrode 12 which is flush with a switch electrode 13. Then, when the fine electric mechanical switch is approached to the closed state and the conductive layers 11 are compressed, restoring forces due to additional spring constants, k1,..., kn of the plurality of deformable conductive layers 11 are sequentially added to the restoring force due to the spring constant k0 of the beam 10. In another embodiment, deformable spring-like elements are used in place of the deformable layers. Furthermore in the other embodiment, compressible layers or the deformable spring-like elements are mounted on the warping beam which is opposed to the switch electrode. COPYRIGHT: (C)2003,JPO
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