公开(公告)号：DE69427522T2

公开(公告)日：2002-03-28

申请号：DE69427522

申请日：1994-04-11

Applicant: IBM

Inventor： BAYER THOMAS ,  GRESCHNER DR ,  MARTIN YVES ,  MEISSNER KLAUS ,  WEISS HELGA

IPC: G01N1/00 ,  G01B1/00 ,  G01B7/34 ,  G01N27/00 ,  G01N37/00 ,  G01Q40/02 ,  H01L21/20

Abstract: To allow faithfully the quantitative interpretation of the measuring results obtained by scanning force microscopes (STM) or atomic force microscopes (AFM) the probe tips used have to be exactly characterized before and after measuring since their size and shape may change during the measuring procedure. If the tips are cone-shaped, their diameter and their cone angle have to be known accurately. Described are calibration standards for profilometers, especially for STMs and AFMs, which are of high accuracy and which allow calibration measurements without frequently removing the probe tips. Methods of producing these calibration standards are shown and examples are given for the use of the calibration standards for measuring features in the sub-nanometer range or for calibrating profilometers.

公开(公告)号：DE69427522D1

公开(公告)日：2001-07-26

申请号：DE69427522

申请日：1994-04-11

Applicant: IBM

Inventor： BAYER THOMAS ,  GRESCHNER DR ,  MARTIN YVES ,  MEISSNER KLAUS ,  WEISS HELGA

IPC: G01N1/00 ,  G01B1/00 ,  G01B7/34 ,  G01N27/00 ,  G01N37/00 ,  G01Q40/02 ,  H01L21/20

Abstract: To allow faithfully the quantitative interpretation of the measuring results obtained by scanning force microscopes (STM) or atomic force microscopes (AFM) the probe tips used have to be exactly characterized before and after measuring since their size and shape may change during the measuring procedure. If the tips are cone-shaped, their diameter and their cone angle have to be known accurately. Described are calibration standards for profilometers, especially for STMs and AFMs, which are of high accuracy and which allow calibration measurements without frequently removing the probe tips. Methods of producing these calibration standards are shown and examples are given for the use of the calibration standards for measuring features in the sub-nanometer range or for calibrating profilometers.

公开(公告)号：DE59800259D1

公开(公告)日：2000-10-12

申请号：DE59800259

申请日：1998-01-28

Applicant: IBM

Inventor： GRESCHNER DR ,  KALT SAMUEL ,  MEISSNER KLAUS ,  PAUL RUDOLF

IPC: G03F1/16 ,  G03F1/20 ,  H01L21/027

Abstract: In an electron or particle beam structuring mask, consisting of a semiconductor wafer (2) with an apertured layer (1) on one surface and with a recess (3) extending from the other surface to the layer-bearing surface, the layer (1) is a preferably 0.1-2.0 mu m thick silicon nitride layer. Also claimed is a similar electron beam structuring mask having, between the apertured layer (31) and the wafer (32), a continuous layer (30) consisting of a combination of silicon dioxide (34), silicon nitride (35) and silicon dioxide (36) layers of relative thicknesses such that the combination is under a slight tensile stress preferably of about 10 dynes/cm . Also claimed is a mask production process involving plasma etching of the apertures in the mask-defining layer (1, 31) at -90 to -140 degrees C using a helicon source for plasma generation and an etching gas mixture of SF6 and O2 in a ratio resulting in perpendicular aperture walls.