公开(公告)号：JPH10261584A

公开(公告)日：1998-09-29

申请号：JP5301298

申请日：1998-03-05

Applicant: IBM

Inventor： BAYER THOMAS ,  GRESCHNER JOHANN ,  KALT SAMUEL ,  MEISSNER KLAUS ,  PFEIFFER HANS

IPC: G03F1/20 ,  G03F1/22 ,  H01L21/027 ,  H01L21/306 ,  G03F1/16

Abstract: PROBLEM TO BE SOLVED: To easily form a support wall by forming a film mask with a mask field and a single-crystal silicon body, providing a support wall being covered with a film, forming the support wall by anisotropic plasma etching, and performing wet etching immediately before reaching the covering film of the support wall. SOLUTION: The support wall of a mask with a mask field 8 where a boundary is screened by a thin support wall 1 consists of a single-crystal silicon and is covered with a film 2 that is approximately 0.2 mm-2 μm thick. The support wall is formed by the anisotropic plasma etching of the single-crystal silicon body 1. Therefore, an opening that is approximately 400 μm deep with a vertical wall is etched into the silicon body. Plasma etching stops immediately before reaching the film 2 and the final thickness part before the film is eliminated by wet etching. A support wall being arranged accurately vertically to the film is formed easily, thus preventing the film from being damaged.

公开(公告)号：JPH11260247A

公开(公告)日：1999-09-24

申请号：JP301999

申请日：1999-01-08

Applicant: IBM

Inventor： BAYER THOMAS ,  GRESCHNER JOHANN DR ,  KALT SAMUEL ,  MEISSNER KLAUS ,  PAUL RUDOLF

IPC: H01J9/02 ,  H01J1/304 ,  H01J3/02 ,  H01J29/04 ,  H01J31/12 ,  H01J1/30

Abstract: PROBLEM TO BE SOLVED: To obtain a field-emission element of various types by which obstacles of prior art such as high leakage current or the like can be overcome. SOLUTION: This field-emission element contains plural tip parts 2 composed in each aperture 5 which are formed by a gate electrode. When a prescribed voltage between the gate and a cathode is applied, electrons are emitted from one or more tip parts 2 into a vacuum. The tip parts 2 are made of single- crystal silicon 1 or polycrystal line silicon, and all of them have nearly same the height and end in the boundary layer between single-crystal silicon 1 or polycrystal line silicon and an insulator 3, respectively. The plural tip parts 2 are formed through plasma etching without special lithographic process. The tip-part forming process can be applied to a substrate of an arbitrary size, so that this field-emission element can be applied to a flat panel display.

公开(公告)号：JPH11258251A

公开(公告)日：1999-09-24

申请号：JP36210998

申请日：1998-12-21

Applicant: IBM

Inventor： BAYER THOMAS ,  GRESCHNER JOHANN DR ,  DR ROBERT YUNJINJAA ,  KALT SAMUEL ,  HELGA WEISS

IPC: G01B7/34 ,  G01B21/30 ,  G01N37/00 ,  G01Q60/10 ,  G01Q60/16 ,  G01Q60/24 ,  G01Q60/38

Abstract: PROBLEM TO BE SOLVED: To provide a micromachine-type sensor which is used to measure a shape by an atomic force microscope (AFM)/a scanning tunneling microscope(STM). SOLUTION: A micromachine-type sensor which is used to measure a shape by an AFM/an STM contains a cantilever beam 2 which holds a tip part 1a at one end and a fixed block 2 at the other end which is separated at a proper distance from the tip part 1a. The cantilever beam 2, the tip part 1a and the fixed block 3 are formed to be of a micromachine type. The tip part 1a is formed on the cantilever beam 2 at an angle of, e.g., 92 to 105 deg.. As a proper execution example, the tip part 1a is composed of polycrystal diamond, the cantilever beam 2 is composed of silicon nitride, and the fixed block 3 is composed of Pyrex glass. In addition, this invention is related to a tip part which is formed on a pedestal, to a tip part which comprises an arrow-shaped or spherical tip and to a method which forms the micromachine-type sensor.

公开(公告)号：JPH10275773A

公开(公告)日：1998-10-13

申请号：JP5300198

申请日：1998-03-05

Applicant: IBM

Inventor： GRESCHNER JOHANN ,  KALT SAMUEL ,  MEISSNER KLAUS ,  PAUL RUDOLF

IPC: G03F1/16 ,  G03F1/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a film mask for electron beam lithography that has a high mechanical stability and a thin film thickness, cannot be subjected to stress, and allows a submicron structure body to be easily created without any rounding effect using a reactive ion etching method. SOLUTION: In the case of a film mask for forming a surface region using electron beams or particle beams, a silicon nitride layer 1 with a feedthrough opening for demarcating a mask pattern is provided on one surface of a semiconductor wafer 2 that is preferably made of silicon. A recess 3 in bath tub type is extended from the other surface of the semiconductor wafer 2 to a layer adhesion surface.

公开(公告)号：DE19710798C1

公开(公告)日：1998-07-30

申请号：DE19710798

申请日：1997-03-17

Applicant: IBM

Inventor： BAYER THOMAS ,  GRESCHNER JOHANN DR ,  KALT SAMUEL ,  MEISSNER KLAUS ,  PFEIFFER HANS

IPC: G03F1/20 ,  G03F1/22 ,  H01L21/027 ,  H01L21/306 ,  G03F1/14

Abstract: In the production of a mask with mask areas and thin support walls (1) which are covered with a membrane (2) and which are formed by anisotropic plasma etching of a single crystal silicon body, a wet etching step is carried out just before reaching the membrane (2) and the support walls (1) are aligned parallel to the 100 direction of the silicon body. Preferably, wet etching is carried out with an alkaline solution and the membrane is a 0.2-2 mu thick membrane of heavily doped silicon, silicon nitride or a SiO2/Si3N4/SiO2 layer combination which is covered on both sides with either a heavy metal-coated silicon nitride layer or a heavy metal layer.

公开(公告)号：DE19710799A1

公开(公告)日：1998-10-01

申请号：DE19710799

申请日：1997-03-17

Applicant: IBM

Inventor： GRESCHNER JOHANN DR ,  KALT SAMUEL ,  MEISSNER KLAUS ,  PAUL RUDOLF

IPC: G03F1/16 ,  G03F1/20 ,  H01L21/027 ,  G03F1/08

Abstract: In an electron or particle beam structuring mask, consisting of a semiconductor wafer (2) with an apertured layer (1) on one surface and with a recess (3) extending from the other surface to the layer-bearing surface, the layer (1) is a preferably 0.1-2.0 mu m thick silicon nitride layer. Also claimed is a similar electron beam structuring mask having, between the apertured layer (31) and the wafer (32), a continuous layer (30) consisting of a combination of silicon dioxide (34), silicon nitride (35) and silicon dioxide (36) layers of relative thicknesses such that the combination is under a slight tensile stress preferably of about 10 dynes/cm . Also claimed is a mask production process involving plasma etching of the apertures in the mask-defining layer (1, 31) at -90 to -140 degrees C using a helicon source for plasma generation and an etching gas mixture of SF6 and O2 in a ratio resulting in perpendicular aperture walls.

公开(公告)号：DE59800259D1

公开(公告)日：2000-10-12

申请号：DE59800259

申请日：1998-01-28

Applicant: IBM

Inventor： GRESCHNER DR ,  KALT SAMUEL ,  MEISSNER KLAUS ,  PAUL RUDOLF

IPC: G03F1/16 ,  G03F1/20 ,  H01L21/027

Abstract: In an electron or particle beam structuring mask, consisting of a semiconductor wafer (2) with an apertured layer (1) on one surface and with a recess (3) extending from the other surface to the layer-bearing surface, the layer (1) is a preferably 0.1-2.0 mu m thick silicon nitride layer. Also claimed is a similar electron beam structuring mask having, between the apertured layer (31) and the wafer (32), a continuous layer (30) consisting of a combination of silicon dioxide (34), silicon nitride (35) and silicon dioxide (36) layers of relative thicknesses such that the combination is under a slight tensile stress preferably of about 10 dynes/cm . Also claimed is a mask production process involving plasma etching of the apertures in the mask-defining layer (1, 31) at -90 to -140 degrees C using a helicon source for plasma generation and an etching gas mixture of SF6 and O2 in a ratio resulting in perpendicular aperture walls.

公开(公告)号：DE19800555A1

公开(公告)日：1999-07-15

申请号：DE19800555

申请日：1998-01-09

Applicant: IBM

Inventor： BAYER THOMAS ,  GRESCHNER JOHANN DR ,  KALT SAMUEL ,  MEISSNER KLAUS ,  PAUL RUDOLF

IPC: H01J9/02 ,  H01J1/304 ,  H01J3/02 ,  H01J29/04 ,  H01J31/12 ,  H01J1/30

Abstract: A field emission component has several electron emission tips (2) arranged in each of several circular gate holes (5) formed through electrodes. An Independent claim is also included for the production of a field emission component by coating a single crystal silicon substrate with an insulating layer (3), applying a gate metal layer (4) and a photoresist layer on the insulating layer, forming a hole pattern in the resist layer by photolithography, transferring and opening the hole pattern into the gate metal layer by etching, producing tips (2) in the substrate in the hole regions by plasma etching and then applying a back face metallization onto the substrate.