公开(公告)号：JP2002353246A

公开(公告)日：2002-12-06

申请号：JP2002110367

申请日：2002-04-12

Applicant: IBM

Inventor： CYRILLE CABRAL JR ,  KEVIN K CHAN ,  COHEN GUY MOSHE ,  GUARINI KATHRYN WILDER ,  LAVOIE CHRISTIAN ,  PAUL MICHAEL SOLOMON ,  ZHANG YING

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L29/45 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a self-aligned silicide process applicable to contacting silicon, sidewall, source, and drain. SOLUTION: A method (and a structure formed by using this method) to form a metal silicide contact on a non-planar silicon-containing area which limits the silicon consumption at a silicon-containing area includes: forming a blanket metal layer over the silicon-containing area, forming a silicon layer over the metal layer, performing an selective and anisotropical etching of the silicon layer against the metal, forming a metal silicon alloy by reacting the metal and silicon at a first temperature, etching away any unreacted metal layer, forming a metal-Si2 alloy by annealing at a second temperature, and selectively etching away any unreacted silicon layer.