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公开(公告)号:JPS6083332A
公开(公告)日:1985-05-11
申请号:JP9671084
申请日:1984-05-16
Applicant: IBM
Inventor: HIROYUKI HIRAOKA
IPC: C23C14/12 , C23F1/00 , C23F1/02 , G03F1/20 , G03F7/09 , H01L21/027 , H01L21/302 , H01L21/3065 , H01L21/311
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公开(公告)号:JPS6377052A
公开(公告)日:1988-04-07
申请号:JP12610987
申请日:1987-05-25
Applicant: IBM
Inventor: HIROYUKI HIRAOKA
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公开(公告)号:JPS6062123A
公开(公告)日:1985-04-10
申请号:JP9763884
申请日:1984-05-17
Applicant: IBM
Inventor: HIROYUKI HIRAOKA
IPC: H01L21/027 , G03F7/075 , G03F7/16 , G03F7/20 , H01L21/312
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公开(公告)号:JPS6356919A
公开(公告)日:1988-03-11
申请号:JP12610687
申请日:1987-05-25
Applicant: IBM
Inventor: HIROYUKI HIRAOKA , JIEFUREI UIRIAMU RABADEII , JIEEMUZU SHII TANGU RII , SUKOTSUTO AASAA MAKUDONARUDO , KAARUTON GURANTO UIRUSON
IPC: H01L21/302 , G03F7/40 , H01L21/027 , H01L21/3065
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公开(公告)号:JPS58115435A
公开(公告)日:1983-07-09
申请号:JP17650182
申请日:1982-10-08
Applicant: IBM
Inventor: JIYOAKIMU BAAGON , HIROYUKI HIRAOKA , ROORENSU UIRIAMU UERUSHIYU JIY
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公开(公告)号:JPS5842041A
公开(公告)日:1983-03-11
申请号:JP10148182
申请日:1982-06-15
Applicant: IBM
Inventor: JIEEMUZU EKONOMII , ROI JIYON GURITSUTAA , HIROYUKI HIRAOKA
Abstract: A positive working electron beam resist comprising a resinous condensation product of formaldehyde with a phenol or a cresol having a chloro substituent ortho to the hydroxyl group on its aromatic ring is imagewise exposed to electron beam irradiation and then the exposed portion of the resist is dissolved away to leave a petterned mask.
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公开(公告)号:JPS60251628A
公开(公告)日:1985-12-12
申请号:JP604385
申请日:1985-01-18
Applicant: IBM
Inventor: HIROYUKI HIRAOKA
IPC: H01L21/302 , H01L21/3065 , H01L21/311 , H05K3/00
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公开(公告)号:JPH02291562A
公开(公告)日:1990-12-03
申请号:JP6287290
申请日:1990-03-15
Applicant: IBM
Inventor: HIROYUKI HIRAOKA
IPC: G03F7/11 , G03F7/38 , G03F7/40 , H01L21/027
Abstract: PURPOSE: To prevent the swelling and cracking of the surface of a resist image by coating the image with poly (dimethylsilazane), heating the coated image and washing it with a solvent. CONSTITUTION: When a photoresist image is treated so as to impart resistance to reactive ion etching, the image is coated with poly (dimethylsilazane) and the coated image is heated and washed with a solvent. The poly (dimethylsilazane) is dissolved in a hydrocarbon solvent and used for silylating the resist image. The heating process is carried out at 95 deg.C for about 30min on a hot plate which is most convenient and enables easy heating. A solvent such as toluene or xylene is used. The swelling and cracking of the surface of the resist image are prevented.
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公开(公告)号:JPH01235016A
公开(公告)日:1989-09-20
申请号:JP295589
申请日:1989-01-11
Applicant: IBM
Abstract: PURPOSE: To decrease the treating temp. and treating time in the production of a thin film magnetic head and to improve the dimensional stability by using a photosensitive resin crosslinked with a crosslinking agent which is activated by heat to form an electric insulating body surrounding a conductive coil. CONSTITUTION: The thin film magnetic head assembly 11 consists of a nonmagnetic ceramic base body and a magnetic pole piece layers 12, 14 formed on the base body. A nonmagnetic insulating material 22 is deposited between the magnetic pole piece layers 12, 14. As for the nonmagnetic insulating material 22, a photosensitive resin containing a crosslinking agent which is activated by heat is used. Thereby, the hardening time is significantly decreased, the hardening temp. is significantly decreased, and a more stable insulating layer can be formed.
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公开(公告)号:JPS60124940A
公开(公告)日:1985-07-04
申请号:JP14983384
申请日:1984-07-20
Applicant: IBM
Inventor: HIROYUKI HIRAOKA
IPC: H01L21/027 , G03F7/075 , G03F7/09 , G03F7/20 , G03F7/26 , G03F7/30 , H01L21/30 , H01L21/311
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