公开(公告)号：JPH10256510A

公开(公告)日：1998-09-25

申请号：JP711998

申请日：1998-01-19

Applicant: IBM

Inventor： STUART AQUARISTER BURNS JR ,  HUSSEIN IBRAHIM HANAFI ,  POWERD REO CALTER ,  WALDEMAR WOLTER KOKON ,  JEFFREY J WERSER

IPC: H01L21/8247 ,  H01L21/24 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/76 ,  H01L21/8242 ,  H01L27/108 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

Abstract: PROBLEM TO BE SOLVED: To obtain a high density mounting array of vertical semiconductor devices having a pillar and a deep trench capacitor and a method for generating it. SOLUTION: A pillar 230 functions as a transistor channel, and is formed between an upper doped region 240 and a lower doped region 405. The region 405 is a self-alignment type, and disposed under the pillar. This array has a column of bit lines 314, and a row of word lines 275. The lower doped regions 405 of all the cells are separated without increasing a size, and maintained in minimum area of the cell. Deep trench capacitors 405, 580, 585 do not increase array area, and hence the array is adapted to DRAM application of gigabits.

公开(公告)号：JP2000323684A

公开(公告)日：2000-11-24

申请号：JP2000085406

申请日：2000-03-24

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： GRUENING ULRIKE ,  HALLE SCOTT ,  RADENS CARL J ,  JEFFREY J WERSER ,  BEINTNER JOCHEN ,  MANDELMAN JACK A ,  WITTMANN JUERGEN

IPC: H01L27/108 ,  H01L21/8242

Abstract: PROBLEM TO BE SOLVED: To form a trench capacitor in a semiconductor body. SOLUTION: A trench capacitor 10 and a MOS transistor 9 are provided in a substrate 16 to form a cell 8 of the DRAM, and the cell 8 is separated from adjacent cells by an STI region 28. The capacitor 10 is composed of an insulator 14 enveloping the trench and a first electrode 24 filled with polysilicon 12, is connected to the drain portion 72 through a buried electrode 22, and is insulated from a gate electrode 20 by a dielectric 23. A second electrode 25 is formed in its bottom portion through an insulator 14. A transistor 9 has N-type drain 72 and source 71 in an upper active region 11 of the substrate 16 and operates with a p well as channel.