公开(公告)号：GB2609127B

公开(公告)日：2025-04-30

申请号：GB202214682

申请日：2021-02-01

Applicant: IBM

Inventor： BING DANG ,  LEANNA PANCOAST ,  JAE-WOONG NAH ,  JOHN KNICKERBOCKER

IPC: H01M10/0525 ,  H01M10/04 ,  H01M10/052 ,  H01M10/0562 ,  H01M10/0585

Abstract: Microbatteries and methods for forming microbatteries are provided. The microbatteries and methods address at least one or both of edge sealing issues for edges of a stack forming part of a microbatteries and overall sealing for individual cells for microbatteries in a batch process. A transferable solder molding apparatus and sealing structure are proposed in an example to provide a metal casing for a solid-state thin-film microbattery. An exemplary proposed process involves deposition or pre-forming low-temperature solder casing separately from the microbatteries. Then a thermal compression may be used to transfer the solder casing to each battery cell, with a handler apparatus in a batch process in an example. These exemplary embodiments can address the temperature tolerance constrain for solid state thin film battery during handling, metal sealing, and packaging.

公开(公告)号：GB2600623A

公开(公告)日：2022-05-04

申请号：GB202201520

申请日：2020-06-17

Applicant: IBM

Inventor： ERIC PETER LEWANDOWSKI ,  JAE-WOONG NAH ,  JENG-BANG YAU ,  PETER JEROME SORCE

IPC: H01L21/60 ,  H01L23/485 ,  H01L23/498 ,  H01L27/18

Abstract: A method for forming a solder bump (122) includes preparing a transfer mold (100) having a solder pillar (112) extending from a mold substrate (102) and through a first photoresist layer (104) and having a shape partially defined by a second photoresist layer (108) that is removed prior to transfer of the solder; providing a device substrate (114) having a wettable pad (120); placing the transfer mold (100) and the device substrate (114) into aligned contact such that the solder pillar (112) is in contact with the wettable pad (120); forming a metallic bond between the solder pillar (112) and the wettable pad (120), e.g. by a cold welding process or a reflow process; and removing the mold substrate (102) and the first photoresist layer (104). The mold substrate (102) and the transfer mold (100) may be flexible. The transfer mold may comprise at least one of: a wetting layer over the mold substrate (402), in which case a pillar (112) including aluminum may be deposited and reflowed; a seed layer over the mold substrate (402); and a non-wetting layer over the second photoresist layer (408). The device substrate (114, 502) may comprise a through hole (118, 504) and may be an interposer made of silicon, glass and/or organic substrate material. The method may further comprise attaching the interposer (114, 502) to a qubit semiconductor device (a superconducting chip) (300, 516), wherein the qubit semiconductor device (300, 516) comprises a Josephson junction (304, 518), and wherein the attaching of the interposer (114, 502) to the qubit semiconductor device (300, 516) includes aligning the hole (118, 504) through the interposer (114, 502) with the Josephson junction (304, 518) to provide a path for accessing the Josephson junction (304, 518), in particular to make adjustments to its design frequency. The solder pillar (122) may be one of a plurality of solder pillars that are formed around the hole (118) between the qubit semiconductor device (300) and the interposer (114) for providing an amount of thermal isolation of the Josephson junction (304), forming a circular wall (200A, 200B) around the qubits and between the interposer (114) and the superconducting chip (300), wherein the circular wall (200A, 200B) may include at least one gap (202) therethrough. The solder pillar (512) may be one of a plurality of solder pillars (512) of the transfer mold, including a first solder pillar (512) having a first diameter and a second solder pillar (512) having a second diameter, the first diameter being larger than the second diameter. The device substrate (602) may comprise a semiconductor substrate comprising a deep recess (604), wherein a circuit component (608) may be comprised in the deep recess (604). The preparing of the transfer mold (100) may comprise: patterning the first and second photoresist layers (104, 108) to define a recess (110) that extends through the first and second photoresist layers (104, 108); and using injection molded soldering (IMS) to fill the recess (110) with solder to form the solder pillar (112). Alternatively, the preparing of the transfer mold may comprise: patterning the first and second photoresist layers (404, 408) to define a recess (410) that extends through the first and second photoresist layers (404, 408); forming a seed layer, wherein at least a portion of the seed layer is provided in the recess (410); and using electroplating to fill the recess (410) with solder and form the solder pillar. The pillars (112) may also be 3-D metal posts formed by copper plating or copper stud bumps.

公开(公告)号：GB2603839A

公开(公告)日：2022-08-17

申请号：GB202117435

申请日：2021-12-02

Applicant: IBM

Inventor： QIANWEN CHEN ,  JAE-WOONG NAH ,  BING DANG ,  LEANNA PANCOAST ,  JOHN KNICKERBOCKER

IPC: H01M10/04 ,  H01M6/40 ,  H01M10/0585 ,  H01M50/119

Abstract: A microbattery includes a first micro-battery device including a substrate 102 having a metal anode via 104 and a metal cathode via 104. A battery element 112 formed on the substrate includes a cathode current collector 114 electrically connected to a cathode through the metal cathode via and an anode current collector 106 electrically connected to an anode 110 through the metal anode via. A metal sealing layer 124 is formed on at least sidewall surfaces of the battery element and is electrically connected to the cathode. A method of forming a microbattery device involves forming a metal anode via and a metal cathode via in a substrate, forming a metal layer 108 on a bottom side of the substrate, forming a battery element on a top side of the substrate, forming an encapsulation layer 116 around the battery element, forming trenches (150, Figure 1F) through the encapsulation layer and the substrate on different sides of the battery element, and forming a metal sealing layer in the trenches to cover at least sidewall surfaces of the battery element. The metal sealing layer is electrically connected to the battery element through the metal layer and the metal cathode via.