公开(公告)号：GB2547297A

公开(公告)日：2017-08-16

申请号：GB201616755

申请日：2016-10-03

Applicant: IBM

Inventor： ERIC PETER LEWANDOWSKI ,  GREGORY MICHAEL FRITZ ,  STEVEN LORENZ WRIGHT ,  JOANA SOFIA BRANQUINHO TERESA MARIA ,  BING DANG ,  BUCKNELL WEBB

IPC: A61K9/00 ,  A61M5/142

Abstract: A digital biomedical device includes a substrate forming a cavity, a seal formed around the cavity, a lid coupled to the substrate by the seal, a reactive metal structure comprising a plurality of metal layers, wherein the reactive metal structure is a component of at least one of the substrate and the lid, a metal trace configured to initiate a self-propagating reaction between the plurality of metal layers of the reactive metal structure and release contents of the cavity, and a power supply configured to apply an electric current to the metal trace. The device is used to deliver substances to the body in a controlled manner. Also disclosed is a method of activating said device to release its contents.

公开(公告)号：GB2600623A

公开(公告)日：2022-05-04

申请号：GB202201520

申请日：2020-06-17

Applicant: IBM

Inventor： ERIC PETER LEWANDOWSKI ,  JAE-WOONG NAH ,  JENG-BANG YAU ,  PETER JEROME SORCE

IPC: H01L21/60 ,  H01L23/485 ,  H01L23/498 ,  H01L27/18

Abstract: A method for forming a solder bump (122) includes preparing a transfer mold (100) having a solder pillar (112) extending from a mold substrate (102) and through a first photoresist layer (104) and having a shape partially defined by a second photoresist layer (108) that is removed prior to transfer of the solder; providing a device substrate (114) having a wettable pad (120); placing the transfer mold (100) and the device substrate (114) into aligned contact such that the solder pillar (112) is in contact with the wettable pad (120); forming a metallic bond between the solder pillar (112) and the wettable pad (120), e.g. by a cold welding process or a reflow process; and removing the mold substrate (102) and the first photoresist layer (104). The mold substrate (102) and the transfer mold (100) may be flexible. The transfer mold may comprise at least one of: a wetting layer over the mold substrate (402), in which case a pillar (112) including aluminum may be deposited and reflowed; a seed layer over the mold substrate (402); and a non-wetting layer over the second photoresist layer (408). The device substrate (114, 502) may comprise a through hole (118, 504) and may be an interposer made of silicon, glass and/or organic substrate material. The method may further comprise attaching the interposer (114, 502) to a qubit semiconductor device (a superconducting chip) (300, 516), wherein the qubit semiconductor device (300, 516) comprises a Josephson junction (304, 518), and wherein the attaching of the interposer (114, 502) to the qubit semiconductor device (300, 516) includes aligning the hole (118, 504) through the interposer (114, 502) with the Josephson junction (304, 518) to provide a path for accessing the Josephson junction (304, 518), in particular to make adjustments to its design frequency. The solder pillar (122) may be one of a plurality of solder pillars that are formed around the hole (118) between the qubit semiconductor device (300) and the interposer (114) for providing an amount of thermal isolation of the Josephson junction (304), forming a circular wall (200A, 200B) around the qubits and between the interposer (114) and the superconducting chip (300), wherein the circular wall (200A, 200B) may include at least one gap (202) therethrough. The solder pillar (512) may be one of a plurality of solder pillars (512) of the transfer mold, including a first solder pillar (512) having a first diameter and a second solder pillar (512) having a second diameter, the first diameter being larger than the second diameter. The device substrate (602) may comprise a semiconductor substrate comprising a deep recess (604), wherein a circuit component (608) may be comprised in the deep recess (604). The preparing of the transfer mold (100) may comprise: patterning the first and second photoresist layers (104, 108) to define a recess (110) that extends through the first and second photoresist layers (104, 108); and using injection molded soldering (IMS) to fill the recess (110) with solder to form the solder pillar (112). Alternatively, the preparing of the transfer mold may comprise: patterning the first and second photoresist layers (404, 408) to define a recess (410) that extends through the first and second photoresist layers (404, 408); forming a seed layer, wherein at least a portion of the seed layer is provided in the recess (410); and using electroplating to fill the recess (410) with solder and form the solder pillar. The pillars (112) may also be 3-D metal posts formed by copper plating or copper stud bumps.

公开(公告)号：IL298457A

公开(公告)日：2023-01-01

申请号：IL29845722

申请日：2022-11-21

Applicant: IBM CORP ,  ERIC PETER LEWANDOWSKI ,  JENG BANG YAU ,  ERIC ZHANG ,  BUCKNELL C WEBB

Inventor： ERIC PETER LEWANDOWSKI ,  JENG-BANG YAU ,  ERIC ZHANG ,  BUCKNELL C WEBB

IPC: G06N10/40

Abstract: Techniques regarding selectively tuning the operating frequency of superconducting Josephson junction resonators are provided. For example, one or more embodiments described herein can comprise a method that can include chemically altering a Josephson junction of a Josephson junction resonator via a plasma treatment. The method can also comprise selectively tuning an operating frequency of the Josephson junction resonator based on a property of the plasma treatment.

公开(公告)号：BR112021025725A2

公开(公告)日：2022-02-08

申请号：BR112021025725

申请日：2020-05-13

Applicant: IBM

Inventor： WEBB BUCKNELL ,  ERIC PETER LEWANDOWSKI ,  JARED BARNEY HERTZBERG ,  SANDBERG MARTIN ,  JINKA OBLESH

IPC: H01L23/44

Abstract: estrutura de termalização para dispositivos resfriados à temperatura criogênica. uma estrutura de termalização é formada utilizando uma folha e um dispositivo de baixa temperatura (ltd). a folha inclui uma primeira camada de um primeiro material. o ltd inclui uma superfície a partir da qual calor é transferido para longe do ltd. um acoplamento é formado entre a folha e a superfície do ltd, onde o acoplamento inclui uma ligação formada entre a folha e a superfície de modo que a formação da ligação forma um conjunto de cristas na folha, uma crista no conjunto de cristas operando para dissipar o calor.

公开(公告)号：IL295564B2

公开(公告)日：2025-04-01

申请号：IL29556422

申请日：2022-08-11

Applicant: IBM ,  DONGBING SHAO ,  ERIC PETER LEWANDOWSKI ,  NICHOLAS TORLEIV BRONN ,  MARKUS BRINK

Inventor： DONGBING SHAO ,  ERIC PETER LEWANDOWSKI ,  NICHOLAS TORLEIV BRONN ,  MARKUS BRINK

IPC: G06N10/00 ,  H01L23/00 ,  H01L23/14 ,  H01L23/498 ,  H01L23/538 ,  H01L25/065

Abstract: Systems and techniques that facilitate hybrid readout packaging for quantum multichip bonding are provided. In various embodiments, an interposer can have a first quantum chip and a second quantum chip. In various aspects, a readout resonator (e.g., input/output port) of one or more qubits on the first quantum chip can be routed to an inner portion of the interposer. In various instances, the inner portion can be located between the first quantum chip and the second quantum chip. In various aspects, routing the readout resonator to the inner portion can reduce a number of crossings and/or intersections between input/output lines on the interposer and connection buses between qubits on the interposer.

公开(公告)号：GB2602607B

公开(公告)日：2023-05-17

申请号：GB202205126

申请日：2020-08-19

Applicant: IBM

Inventor： PAUL ANDRY ,  ERIC PETER LEWANDOWSKI ,  DANA ALEXA TOTIR

IPC: H01M10/0525 ,  H01M6/40 ,  H01M10/058

Abstract: A method of forming a thin film battery may include forming may include forming a trench in a substrate, depositing a stencil on top surface of the substrate, wherein the stencil is aligned with the trench, depositing a cathode layer in the trench, wherein the cathode layer is in direct contact with the stencil, and compressing the cathode layer into the trench to reduce a thickness of the cathode layer. The compressing the cathode layer into the trench may include applying isostatic pressure onto the cathode layer using a pressure head. The method may also include depositing an electrolyte layer on top of the cathode layer, depositing an anode layer on top of the electrolyte layer, and depositing an anode collector layer on top of the anode layer.

公开(公告)号：GB2547297B

公开(公告)日：2018-08-01

申请号：GB201616755

申请日：2016-10-03

Applicant: IBM

Inventor： ERIC PETER LEWANDOWSKI ,  GREGORY MICHAEL FRITZ ,  STEVEN LORENZ WRIGHT ,  JOANA SOFIA BRANQUINHO TERESA MARIA ,  BING DANG ,  BUCKNELL WEBB

IPC: A61K9/00 ,  A61M5/142

Abstract: A digital biomedical device includes a substrate forming a cavity, a seal formed around the cavity, a lid coupled to the substrate by the seal, a reactive metal structure comprising a plurality of metal layers, wherein the reactive metal structure is a component of at least one of the substrate and the lid, a metal trace configured to initiate a self-propagating reaction between the plurality of metal layers of the reactive metal structure and release contents of the cavity, and a power supply configured to apply an electric current to the metal trace.

公开(公告)号：IL295564B1

公开(公告)日：2024-12-01

申请号：IL29556422

申请日：2022-08-11

Applicant: IBM ,  DONGBING SHAO ,  ERIC PETER LEWANDOWSKI ,  NICHOLAS TORLEIV BRONN ,  MARKUS BRINK

Inventor： DONGBING SHAO ,  ERIC PETER LEWANDOWSKI ,  NICHOLAS TORLEIV BRONN ,  MARKUS BRINK

IPC: G06N10/00 ,  H01L23/00 ,  H01L23/14 ,  H01L23/498 ,  H01L23/538 ,  H01L25/065 ,  H01L29/66

Abstract: Systems and techniques that facilitate hybrid readout packaging for quantum multichip bonding are provided. In various embodiments, an interposer can have a first quantum chip and a second quantum chip. In various aspects, a readout resonator (e.g., input/output port) of one or more qubits on the first quantum chip can be routed to an inner portion of the interposer. In various instances, the inner portion can be located between the first quantum chip and the second quantum chip. In various aspects, routing the readout resonator to the inner portion can reduce a number of crossings and/or intersections between input/output lines on the interposer and connection buses between qubits on the interposer.

公开(公告)号：IL295564A

公开(公告)日：2022-10-01

申请号：IL29556422

申请日：2022-08-11

Applicant: IBM ,  DONGBING SHAO ,  ERIC PETER LEWANDOWSKI ,  NICHOLAS TORLEIV BRONN ,  MARKUS BRINK

Inventor： DONGBING SHAO ,  ERIC PETER LEWANDOWSKI ,  NICHOLAS TORLEIV BRONN ,  MARKUS BRINK

IPC: G06N10/00 ,  H01L23/00 ,  H01L23/14 ,  H01L23/498 ,  H01L23/538 ,  H01L25/065 ,  H01L29/66

Abstract: Systems and techniques that facilitate hybrid readout packaging for quantum multichip bonding are provided. In various embodiments, an interposer can have a first quantum chip and a second quantum chip. In various aspects, a readout resonator (e.g., input/output port) of one or more qubits on the first quantum chip can be routed to an inner portion of the interposer. In various instances, the inner portion can be located between the first quantum chip and the second quantum chip. In various aspects, routing the readout resonator to the inner portion can reduce a number of crossings and/or intersections between input/output lines on the interposer and connection buses between qubits on the interposer.

公开(公告)号：GB2602607A

公开(公告)日：2022-07-06

申请号：GB202205126

申请日：2020-08-19

Applicant: IBM

Inventor： PAUL ANDRY ,  ERIC PETER LEWANDOWSKI ,  DANA ALEXA TOTIR

IPC: H01M10/0525 ,  H01M10/058

Abstract: A method of forming a thin film battery may include forming may include forming a trench in a substrate, depositing a stencil on top surface of the substrate, wherein the stencil is aligned with the trench, depositing a cathode layer in the trench, wherein the cathode layer is in direct contact with the stencil, and compressing the cathode layer into the trench to reduce a thickness of the cathode layer. The compressing the cathode layer into the trench may include applying isostatic pressure onto the cathode layer using a pressure head. The method may also include depositing an electrolyte layer on top of the cathode layer, depositing an anode layer on top of the electrolyte layer, and depositing an anode collector layer on top of the anode layer.