公开(公告)号：GB2538348A

公开(公告)日：2016-11-16

申请号：GB201604084

申请日：2016-03-10

Applicant: IBM

Inventor： JIN CAI ,  NING LI ,  JEAN-OLIVIER PLOUCHART ,  DEVENDRA SADANA ,  TAK HUNG NING ,  EFFENDI LEOBANDUNG

IPC: H01S5/026 ,  G02B6/42 ,  G02B6/43 ,  H01L27/15

Abstract: After forming a first trench extending through a top semiconductor layer and a buried insulator layer and into a handle substrate 10 of a semiconductor-on-insulator (SOI substrate 8, a dielectric waveguide material stack 22, 24, 26 including a lower dielectric cladding layer, a core layer and an upper dielectric cladding layer is formed within the first trench. Next, at least one lateral bipolar junction transistor (BJT), which can be a PNP BJT 30, an NPN BJT 40 or a pair of complementary PNP BJT 30 and NPN BJT 40, is formed in a remaining portion of the top semiconductor layer. After forming a second trench extending through the dielectric waveguide material stack to re-expose a portion of a bottom surface of the first trench, a laser diode is formed in the second trench. An optoelectronic device, for example a laser diode 60 may be formed on top of the compound semiconductor buffer layer 58 and edge coupled to the dielectric waveguide 22, 24, 26.

公开(公告)号：BR112013009219A2

公开(公告)日：2019-09-24

申请号：BR112013009219

申请日：2011-09-15

Applicant: IBM

Inventor： JIN CAI ,  XIANGDONG CHEN ,  XINLIN WANG

IPC: H01L21/336 ,  H01L29/78

公开(公告)号：GB2538348B

公开(公告)日：2019-06-05

申请号：GB201604084

申请日：2016-03-10

Applicant: IBM

Inventor： JIN CAI ,  NING LI ,  JEAN-OLIVIER PLOUCHART ,  DEVENDRA SADANA ,  TAK HUNG NING ,  EFFENDI LEOBANDUNG

IPC: H01S5/026 ,  G02B6/42 ,  G02B6/43 ,  H01L27/15

Abstract: After forming a first trench extending through a top semiconductor layer and a buried insulator layer and into a handle substrate of a semiconductor-on-insulator (SOI) substrate, a dielectric waveguide material stack including a lower dielectric cladding layer, a core layer and an upper dielectric cladding layer is formed within the first trench. Next, at least one lateral bipolar junction transistor (BJT), which can be a PNP BJT, an NPN BJT or a pair of complementary PNP BJT and NPN BJT, is formed in a remaining portion of the top semiconductor layer. After forming a second trench extending through the dielectric waveguide material stack to re-expose a portion of a bottom surface of the first trench, a laser diode is formed in the second trench.