公开(公告)号：JPH1065070A

公开(公告)日：1998-03-06

申请号：JP17667997

申请日：1997-07-02

Applicant: IBM

Inventor： MICHAEL ANTHONY GEINZU ,  JIYAINARU ABEDEIN MORA ,  STEVEN PAUL OSUTORANDAA ,  JUDITH MARIE RORUDAN ,  GEORGE JOHN SAKUSENMEIYAA ,  GEORGE FREDRIC WOLKER

IPC: H01L23/32 ,  H01L21/60 ,  H01L21/68 ,  H01R4/58

Abstract: PROBLEM TO BE SOLVED: To obtain a low-impedance and re-workable electric interconnection for electric connections without solder and dielectric adhesive film having conductive clusters for sealing capsules. SOLUTION: Recesses 12 are formed into a metal layer 10 for forming clusters 20. A photomask 16 is adhered to the top face 14 of the metal layer 10 and positioned at regions 12 to form openings 18. The interconnection clusters 20 are electroplated to form tree-like metal filaments with the clusters 10 branched. The photomask 16 is removed to leave the clusters 20 defined by the metal filaments. A dielectric adhesive layer 22 is potted round metal clusters to form a dielectric adhesive film 22 having a pattern of clusters 20 for conductive interconnection. Using this film 22, a semiconductor chip or wafer can be interconnected or capsules can be sealed.

公开(公告)号：JPH1070141A

公开(公告)日：1998-03-10

申请号：JP16599897

申请日：1997-06-23

Applicant: IBM

Inventor： BERNIER WILLIAM EMMETT ,  MICHAEL ANTHONY GEINZU ,  MEMIS IRVING ,  SHAUKATULLAH HUSSAIN

IPC: H01L23/373 ,  H01L21/44 ,  H01L21/52 ,  H01L21/56 ,  H01L21/60 ,  H01L23/34 ,  H01L23/367 ,  H01L23/433 ,  H01L23/42

Abstract: PROBLEM TO BE SOLVED: To provide a method of fitting a radiator or heat sink to an electronic component, and its resultant structure. SOLUTION: A heat sink 118 of aluminum or copper is glued to a ceramic cap 100 or an exposed semiconductor chip by the use of a silicon adhesive or flexible epoxy adhesive 120. Aluminum is covered by anode oxidation or chromate conversion, or copper can be covered by nickel or gold chromium. A structure like this is especially beneficial for fitting a flip chip. These adhesive agents contain materials having high thermal conductivities and low coefficients of thermal expansion(CTE), enhance heat performance, and improve the CTE difference between a silicon metal die and the metal of a heat sink.