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8 records (took 0.017 seconds)

    1.
    发明专利
    未知

    公开(公告)号：DK153613C

    公开(公告)日：1988-12-12

    申请号：DK194178

    申请日：1978-05-03

    Applicant: IBM

    Inventor： FORNERIS JOHN LAWRENCE ,  HICKS WILLIAM WALLACE ,  KELLER JOHN HOWARD ,  MCKENNA CHARLES MICHAEL ,  SEIRMARCO JAMES ANTHONY

    IPC: H01J37/20 ,  G01Q60/00 ,  H01J37/02 ,  H01J37/244 ,  H01J37/317 ,  H01L21/265

    Abstract: In an ion beam apparatus a structure for controlling the surface potential of the target comprising an electron source adjacent to the beam for providing electrons to the beam and means between the target and source for inhibiting rectilinear radiations, i.e., electron and other particle and photon radiations between said source and said target. This prevents heating of the target by the electron source and cross-contamination between the source and the target. A further structure is provided for the measurement of the ion beam current while controlling said surface potential of the target which includes: walls adjacent to and electrically insulated from the target and surrounding the beam whereby the walls and target provide a Faraday Cage, means for introducing variable quantities of electrons into the beam within the Faraday Cage, means for measuring the target current, means for combining and measuring the target and wall currents to provide said ion beam current measurement and means for varying the quantities of introduced electrons to control the target current and thereby the target surface potential.

    ION IMPLANTATION APPARATUS
    2.
    发明专利
    ION IMPLANTATION APPARATUS 未知

    公开(公告)号：AU3508078A

    公开(公告)日：1979-10-18

    申请号：AU3508078

    申请日：1978-04-13

    Applicant: IBM

    Inventor： MCKENNA CHARLES MICHAEL ,  MUELLER WOLFGANG FRIEDRICH

    IPC: H01J37/20 ,  H01J37/02 ,  H01J37/244 ,  H01J37/317 ,  H01L21/265 ,  H01J37/08 ,  H01J37/30 ,  H01L21/68

    Abstract: In an ion beam apparatus a structure for controlling the surface potential of the target comprising an electron source adjacent to the beam for providing electrons to the beam and means between the target and source for inhibiting rectilinear radiations, i.e., electron and other particle and photon radiations between said source and said target. This prevents heating of the target by the electron source and cross-contamination between the source and the target. The apparatus further includes means for maintaining said shield means at a lower temperature than said target. A further structure is provided for the measurement of the ion beam current while controlling said surface potential of the target which includes: walls adjacent to and electrically insulated from the target and surrounding the beam whereby the walls and target provide a Faraday Cage, means for introducing variable quantities of electrons into the beam within the Faraday Cage, means for measuring the target current, means for combining and measuring the target and wall currents to provide said ion beam current measurement and means for varying the quantities of introduced electrons to control the target current and thereby the target surface potential. Likewise, this apparatus further includes means for maintaining said shielding means at a temperature lower than said target.

    ION IMPLANTATION APPARATUS
    3.
    发明专利
    ION IMPLANTATION APPARATUS 未知

    公开(公告)号：AU3424778A

    公开(公告)日：1979-09-20

    申请号：AU3424778

    申请日：1978-03-17

    Applicant: IBM

    Inventor： FORNERIS JOHN LAWRENCE ,  HICKS WILLIAM WALLACE ,  KELLER JOHN HOWARD ,  MCKENNA CHARLES MICHAEL ,  SIERMARCO JAMES ANTHONY

    IPC: H01J37/20 ,  G01Q60/00 ,  H01J37/02 ,  H01J37/244 ,  H01J37/317 ,  H01L21/265 ,  H01J37/04 ,  H01J27/00 ,  H01L21/425 ,  H01L21/68 ,  H01L27/04

    Abstract: In an ion beam apparatus a structure for controlling the surface potential of the target comprising an electron source adjacent to the beam for providing electrons to the beam and means between the target and source for inhibiting rectilinear radiations, i.e., electron and other particle and photon radiations between said source and said target. This prevents heating of the target by the electron source and cross-contamination between the source and the target. A further structure is provided for the measurement of the ion beam current while controlling said surface potential of the target which includes: walls adjacent to and electrically insulated from the target and surrounding the beam whereby the walls and target provide a Faraday Cage, means for introducing variable quantities of electrons into the beam within the Faraday Cage, means for measuring the target current, means for combining and measuring the target and wall currents to provide said ion beam current measurement and means for varying the quantities of introduced electrons to control the target current and thereby the target surface potential.

    6.
    发明专利
    未知

    公开(公告)号：DK153613B

    公开(公告)日：1988-08-01

    申请号：DK194178

    申请日：1978-05-03

    Applicant: IBM

    Inventor： FORNERIS JOHN LAWRENCE ,  HICKS WILLIAM WALLACE ,  KELLER JOHN HOWARD ,  MCKENNA CHARLES MICHAEL ,  SEIRMARCO JAMES ANTHONY

    IPC: H01J37/20 ,  G01Q60/00 ,  H01J37/02 ,  H01J37/244 ,  H01J37/317 ,  H01L21/265

    Abstract: In an ion beam apparatus a structure for controlling the surface potential of the target comprising an electron source adjacent to the beam for providing electrons to the beam and means between the target and source for inhibiting rectilinear radiations, i.e., electron and other particle and photon radiations between said source and said target. This prevents heating of the target by the electron source and cross-contamination between the source and the target. A further structure is provided for the measurement of the ion beam current while controlling said surface potential of the target which includes: walls adjacent to and electrically insulated from the target and surrounding the beam whereby the walls and target provide a Faraday Cage, means for introducing variable quantities of electrons into the beam within the Faraday Cage, means for measuring the target current, means for combining and measuring the target and wall currents to provide said ion beam current measurement and means for varying the quantities of introduced electrons to control the target current and thereby the target surface potential.

    HIGH TEMPERATURE ION BEAM SOURCE
    7.
    发明专利
    HIGH TEMPERATURE ION BEAM SOURCE 未知

    公开(公告)号：DE3176789D1

    公开(公告)日：1988-07-21

    申请号：DE3176789

    申请日：1981-09-16

    Applicant: IBM

    Inventor： KELLER JOHN HOWARD ,  MCKENNA CHARLES MICHAEL

    IPC: H01J27/08 ,  H01J27/14 ,  H01J37/08

    Abstract: A plurality of magnetic pole pieces are arranged around the external wall of a high temperature plasma confining structure. The pole pieces are positioned between permanent magnets spaced from one another and the confining structure by distances calculated to produce a minimum field toward the center of the structure with an effective containing field around the periphery of the structure. The magnets and the pole pieces are cooled. An odd number of poles are employed such that the missing pole appears as a virtual pole at the extraction slit used for forming an ion beam for ion implantation. The resulting small package multipole plasma containment functions to provide higher beam current, longer source lifetime, higher voltage stability and reduces maintenance and cleaning operations, with the permanent magnets protected from high temperature and corrosive gases.

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