公开(公告)号：GB2609779B

公开(公告)日：2025-04-16

申请号：GB202215194

申请日：2021-02-19

Applicant: IBM

Inventor： TIAN SHEN ,  RUILONG XIE ,  KEVIN BREW ,  HENG WU ,  JINGYUN ZHANG

IPC: H10B63/10 ,  H10N70/00 ,  H10N70/20

Abstract: A phase change material switch includes a phase change layer disposed on a metal liner. A gate dielectric layer is disposed on the phase change layer. A metal gate liner is disposed on the gate dielectric layer.

公开(公告)号：GB2608771A

公开(公告)日：2023-01-11

申请号：GB202215360

申请日：2021-02-12

Applicant: IBM

Inventor： TIMOTHY MATTHEW PHILIP ,  LAWRENCE CLEVENGER ,  KEVIN BREW

IPC: G11C13/00

Abstract: A phase change memory device is provided. The phase change memory device includes a phase change memory material within an electrically insulating wall, a first heater terminal in the electrically insulating wall, and two read terminals in the electrically insulating wall.