公开(公告)号：GB2609779B

公开(公告)日：2025-04-16

申请号：GB202215194

申请日：2021-02-19

Applicant: IBM

Inventor： TIAN SHEN ,  RUILONG XIE ,  KEVIN BREW ,  HENG WU ,  JINGYUN ZHANG

IPC: H10B63/10 ,  H10N70/00 ,  H10N70/20

Abstract: A phase change material switch includes a phase change layer disposed on a metal liner. A gate dielectric layer is disposed on the phase change layer. A metal gate liner is disposed on the gate dielectric layer.

公开(公告)号：GB2608308A

公开(公告)日：2022-12-28

申请号：GB202213056

申请日：2021-01-26

Applicant: IBM

Inventor： TIAN SHEN ,  HENG WU ,  KEVIN WAYNE BREW ,  JINGYUN ZHANG

IPC: H01L45/00 ,  G06N3/063 ,  G11C11/56 ,  G11C13/00

Abstract: A method is presented for improved linearity of a phase change memory (PCM) cell structure. The method includes forming a bottom electrode (12) over a substrate (10), constructing a PCM stack (20) including a plurality of PCM layers each having a different crystallization temperature over the bottom electrode (12), and forming a top electrode (32) over the PCM stack (20). The crystallization temperature varies in an ascending order from the bottom electrode (12) to the top electrode (32).

公开(公告)号：GB2608308B

公开(公告)日：2025-04-16

申请号：GB202213056

申请日：2021-01-26

Applicant: IBM

Inventor： TIAN SHEN ,  HENG WU ,  KEVIN WAYNE BREW ,  JINGYUN ZHANG

IPC: H10N70/20 ,  G06N3/063 ,  G11C11/56 ,  G11C13/00 ,  H10N70/00

Abstract: A method is presented for improved linearity of a phase change memory (PCM) cell structure. The method includes forming a bottom electrode over a substrate, constructing a PCM stack including a plurality of PCM layers each having a different crystallization temperature over the bottom electrode, and forming a top electrode over the PCM stack. The crystallization temperature varies in an ascending order from the bottom electrode to the top electrode.

公开(公告)号：IL295321A

公开(公告)日：2022-10-01

申请号：IL29532122

申请日：2022-08-02

Applicant: IBM ,  TIAN SHEN ,  RUILONG XIE ,  KEVIN W BREW ,  HENG WU ,  JINGYUN ZHANG

Inventor： TIAN SHEN ,  RUILONG XIE ,  KEVIN W BREW ,  HENG WU ,  JINGYUN ZHANG

IPC: H01L45/00

Abstract: A phase change material switch includes a phase change layer disposed on a metal liner. A gate dielectric layer is disposed on the phase change layer. A metal gate liner is disposed on the gate dielectric layer.