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公开(公告)号:JP2004167671A
公开(公告)日:2004-06-17
申请号:JP2003348877
申请日:2003-10-07
Applicant: Internatl Business Mach Corp
, インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation Inventor: KOCIS JOSEPH T , TORNELLO JAMES , PETRARCA KEVIN , VOLANT RICHARD , SUBANNA SESHADRI
CPC classification number: B81C1/00666 , B81B2201/014 , B81C2201/0167 , H01F2007/068 , H01H50/005
Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing an encapsulated micro electro-mechanical system (MEMS) which causes little metallic fatigue and stress.
SOLUTION: The MEMS manufacturing method includes steps for forming a dielectric layer 204, patterning the upper surface of the first dielectric layer 204 to form a trench, forming a release material 212 in the trench, patterning the upper surface of the release material 212 to form the other trench, forming a first encapsulating layer 222 that includes sidewalls in the other trench, forming a core layer 242 in the first encapsulating layer 222, and forming a second encapsulating layer 262 above the core layer 242 where the second encapsulating layer 262 is connected to sidewalls of the first encapsulating layer 222.
COPYRIGHT: (C)2004,JPO-
公开(公告)号:JP2004006310A
公开(公告)日:2004-01-08
申请号:JP2003109122
申请日:2003-04-14
Applicant: IBM
Inventor: VOLANT RICHARD P , ANGELL DAVID , CANAPERI DONALD F , KOCIS JOSEPH T , PETRARCA KEVIN S , STEIN KENNETH JAY , WILLE WILLIAM C
Abstract: PROBLEM TO BE SOLVED: To provide a structure and a manufacturing method of a microelectric mechanical switch (MEMS) device provided with a self-alignment spacer or a bump. SOLUTION: The spacers arranged having the optimum size so as to make to the minimum a problem caused by stiction by functioning as restricting mechanism concerning the switch are designed. The spacers are manufactured by using the typically standard semi-conductor technology used for manufacturing a CMOS device. This method to manufacture these spacers does not need an additional deposition, excessive lithography process, and an additional etching. COPYRIGHT: (C)2004,JPO
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